JPS6450479A - Manufacture of semiconductor photodetector - Google Patents
Manufacture of semiconductor photodetectorInfo
- Publication number
- JPS6450479A JPS6450479A JP62207887A JP20788787A JPS6450479A JP S6450479 A JPS6450479 A JP S6450479A JP 62207887 A JP62207887 A JP 62207887A JP 20788787 A JP20788787 A JP 20788787A JP S6450479 A JPS6450479 A JP S6450479A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- type
- type inp
- substrate
- reproducibility
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Photovoltaic Devices (AREA)
- Light Receiving Elements (AREA)
- Element Separation (AREA)
Abstract
PURPOSE:To improve controllability and reproducibility by sequentially continuously laminating a first layer of first conductivity type as a multiplying layer and a second layer of second conductivity type the opposite one, from a substrate side, removing the second layer except in a specific region, and equalizing the band gaps of the first and second layers. CONSTITUTION:After the crystals of an n-type InP buffer layer 2, an n<-> type InGaAs light absorption layer 3, an n-type InGaAsP band discontinuously buffer layer 4, an n-type InP magnifying layer 5 and p<+> type InP layer 6 are sequentially continuously grown from an n<+> type InP substrate 1 on the substrate 1, the layer 6 of the regions except a photodetecting region are selectively removed by etching. In this case, the layers 5, 6 are equalized in their band gaps. Thus, reproducibility and controllability are improved.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62207887A JPS6450479A (en) | 1987-08-20 | 1987-08-20 | Manufacture of semiconductor photodetector |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62207887A JPS6450479A (en) | 1987-08-20 | 1987-08-20 | Manufacture of semiconductor photodetector |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6450479A true JPS6450479A (en) | 1989-02-27 |
Family
ID=16547209
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62207887A Pending JPS6450479A (en) | 1987-08-20 | 1987-08-20 | Manufacture of semiconductor photodetector |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6450479A (en) |
-
1987
- 1987-08-20 JP JP62207887A patent/JPS6450479A/en active Pending
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