JPS57139980A - Semiconductor laser device - Google Patents

Semiconductor laser device

Info

Publication number
JPS57139980A
JPS57139980A JP2495581A JP2495581A JPS57139980A JP S57139980 A JPS57139980 A JP S57139980A JP 2495581 A JP2495581 A JP 2495581A JP 2495581 A JP2495581 A JP 2495581A JP S57139980 A JPS57139980 A JP S57139980A
Authority
JP
Japan
Prior art keywords
inas
substrate
semiconductor laser
inaspsb
grown
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2495581A
Other languages
Japanese (ja)
Inventor
Naoki Kobayashi
Yoshiharu Horikoshi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP2495581A priority Critical patent/JPS57139980A/en
Publication of JPS57139980A publication Critical patent/JPS57139980A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To make a matching in a lattice fasible between layers of semiconductor laser by a method wherein in addition to sequential lamination of InAsPSb, InAsSb and InAsPs on an InAs substrate, InAsPSb on the substrate's side is varied gradually. CONSTITUTION:On an N type InAs substrate the first clad layer 2 consisting of N type InAs(1-u-v)PuSbv is grown, and its component ratio is varied so that its forbidden band width is made gradually larger, and subsequently the second clad layer 4 consisting of an InAs(1-w)Sbw active layer 3 and a P type InAs(1-y-z)PySbz is grown. Thereby at each interface between substrates and active layers, lattice constants are approximately brought into a match, and a laser light with a long wavelength of 4-5mum is obtained efficiently.
JP2495581A 1981-02-24 1981-02-24 Semiconductor laser device Pending JPS57139980A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2495581A JPS57139980A (en) 1981-02-24 1981-02-24 Semiconductor laser device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2495581A JPS57139980A (en) 1981-02-24 1981-02-24 Semiconductor laser device

Publications (1)

Publication Number Publication Date
JPS57139980A true JPS57139980A (en) 1982-08-30

Family

ID=12152403

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2495581A Pending JPS57139980A (en) 1981-02-24 1981-02-24 Semiconductor laser device

Country Status (1)

Country Link
JP (1) JPS57139980A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003084263A (en) * 2001-09-17 2003-03-19 Sony Corp Holding member for liquid crystal display panel and liquid crystal display device using the same

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5513827A (en) * 1978-07-14 1980-01-31 Nec Corp Detector for carbon monoxide gas

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5513827A (en) * 1978-07-14 1980-01-31 Nec Corp Detector for carbon monoxide gas

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003084263A (en) * 2001-09-17 2003-03-19 Sony Corp Holding member for liquid crystal display panel and liquid crystal display device using the same

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