JPS57128091A - Double hetero junction type semiconductor laser - Google Patents

Double hetero junction type semiconductor laser

Info

Publication number
JPS57128091A
JPS57128091A JP1315181A JP1315181A JPS57128091A JP S57128091 A JPS57128091 A JP S57128091A JP 1315181 A JP1315181 A JP 1315181A JP 1315181 A JP1315181 A JP 1315181A JP S57128091 A JPS57128091 A JP S57128091A
Authority
JP
Japan
Prior art keywords
semiconductor
layer
semiconductor laser
type semiconductor
confining
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1315181A
Other languages
Japanese (ja)
Inventor
Minoru Kawashima
Yoshiharu Horikoshi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP1315181A priority Critical patent/JPS57128091A/en
Publication of JPS57128091A publication Critical patent/JPS57128091A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3222—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIVBVI compounds, e.g. PbSSe-laser

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To eliminate difficulties in a manufacturing process by a method wherein a semiconductor substrate, a first semiconductor confining layer, a semiconductor active layer and a second semiconductor confining layer are lattice- wise aligned with each other. CONSTITUTION:By changing values (x) and (y) in the structure of a semiconductor active layer 3 Pb1-xSnxTe1-ySey resulting in a change in the energy band gap in said layer 3, said layer 3 can be lattice-wise aligned with a semiconductor substrate 1 and semiconductor confining layers 2 and 4, without changing values (v), (w), and (z) respectively in the structures of the semiconductor substrate 1 Pb1-vSnvTe, semiconductor confining layer 2 PbTe1-wSew, and semiconductor confining layer 4 PbTe1-zSez. Accordingly, no difficulties are encountered in the manufacturing process of a semiconductor laser consisting of two components, one capable of oscillation on a certain wave length and the other capable of oscillation on another.
JP1315181A 1981-01-30 1981-01-30 Double hetero junction type semiconductor laser Pending JPS57128091A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1315181A JPS57128091A (en) 1981-01-30 1981-01-30 Double hetero junction type semiconductor laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1315181A JPS57128091A (en) 1981-01-30 1981-01-30 Double hetero junction type semiconductor laser

Publications (1)

Publication Number Publication Date
JPS57128091A true JPS57128091A (en) 1982-08-09

Family

ID=11825159

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1315181A Pending JPS57128091A (en) 1981-01-30 1981-01-30 Double hetero junction type semiconductor laser

Country Status (1)

Country Link
JP (1) JPS57128091A (en)

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