JPS5550681A - Semiconductor light traveling-wave circuit - Google Patents

Semiconductor light traveling-wave circuit

Info

Publication number
JPS5550681A
JPS5550681A JP12480978A JP12480978A JPS5550681A JP S5550681 A JPS5550681 A JP S5550681A JP 12480978 A JP12480978 A JP 12480978A JP 12480978 A JP12480978 A JP 12480978A JP S5550681 A JPS5550681 A JP S5550681A
Authority
JP
Japan
Prior art keywords
layers
electrodes
light wave
electron
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12480978A
Other languages
Japanese (ja)
Other versions
JPS5651655B2 (en
Inventor
Yoshihisa Yamamoto
Hiroshi Kanbe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP12480978A priority Critical patent/JPS5550681A/en
Publication of JPS5550681A publication Critical patent/JPS5550681A/en
Publication of JPS5651655B2 publication Critical patent/JPS5651655B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/50Amplifier structures not provided for in groups H01S5/02 - H01S5/30

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Led Devices (AREA)
  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To enable amplification or oscillation of light wave in infrared ray region by making electron and light wave travel in parallel while equalizing substantially the traveling speed of the electron to the phase speed of higher order space harmonic waves of the light wave in a semiconductor layer and coupling them to each other. CONSTITUTION:A rugged surface 13 is formed to be continued in a period A on one surface of an n<+>-type GaAs substrate 1, and AlyGa1-yAs layers 2 and 3 having larger band gap than the substrate 1 in I shape are formed on this and back surfaces thereof. Then, I- or P-type AlxGa1-xAs layers 4 and 5 are laminated to have larger band gap than the layers 2 and 3 on the layers 2 and 3, and transparent electrodes 9 and 10 are mounted at the position in the period A direction at both sides surfaces forming by the substrate 1 and the layers 2 and 3. Electrodes 11 and 12 are coated on the front of the layer 4 and on the back of the layer 5, respectively to connect them to the electrodes 11 and 12, and reverse bias power supply 17 is connected between the electrodes 9 and 12 and an electron drift power supply 14 is connected between the electrodes 9 and 10.
JP12480978A 1978-10-11 1978-10-11 Semiconductor light traveling-wave circuit Granted JPS5550681A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12480978A JPS5550681A (en) 1978-10-11 1978-10-11 Semiconductor light traveling-wave circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12480978A JPS5550681A (en) 1978-10-11 1978-10-11 Semiconductor light traveling-wave circuit

Publications (2)

Publication Number Publication Date
JPS5550681A true JPS5550681A (en) 1980-04-12
JPS5651655B2 JPS5651655B2 (en) 1981-12-07

Family

ID=14894648

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12480978A Granted JPS5550681A (en) 1978-10-11 1978-10-11 Semiconductor light traveling-wave circuit

Country Status (1)

Country Link
JP (1) JPS5550681A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015040820A (en) * 2013-08-23 2015-03-02 株式会社島津製作所 Gas analyzing apparatus

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02110567U (en) * 1989-02-22 1990-09-04

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015040820A (en) * 2013-08-23 2015-03-02 株式会社島津製作所 Gas analyzing apparatus

Also Published As

Publication number Publication date
JPS5651655B2 (en) 1981-12-07

Similar Documents

Publication Publication Date Title
JPS5550681A (en) Semiconductor light traveling-wave circuit
GB1321493A (en) Electromagnetic resonators
JPS5673487A (en) Semiconductor laser and its manufacture
JPS55124278A (en) Avalanche photodiode
JPS6488402A (en) Optical waveguide device
JPS6461084A (en) Semiconductor laser
JPS5636184A (en) Manufacture of semiconductor laser
JPS57162382A (en) Semiconductor laser
JPS5763885A (en) Semiconductor laser device
JPS5451491A (en) Semiconductor laser
JPS56108261A (en) Optical integrated circuit
JPS5593314A (en) Piezoelectric oscillator using auxiliary electrode
JPS5673485A (en) Semiconductor luminous element
JPS5791566A (en) Solar battery element
JPS6484776A (en) Semiconductor laser
JPS57207387A (en) Semiconductor optical function element
JPS5645090A (en) Semiconductor laser
JPS5629383A (en) Manufacture of tunnel-junction type josephson element
JPS56110290A (en) Manufacture of semiconductor laser
JPS5768097A (en) Manufacture of semiconductor laser
JPS5327379A (en) Production of semiconductor laser
JPS53110489A (en) Semiconductor laser
JPS56110288A (en) Semiconductor laser element
JPS57115892A (en) Semiconductor laser element
JPS57128091A (en) Double hetero junction type semiconductor laser