JPS5593275A - Semiconductor light wave separating detector - Google Patents

Semiconductor light wave separating detector

Info

Publication number
JPS5593275A
JPS5593275A JP39179A JP39179A JPS5593275A JP S5593275 A JPS5593275 A JP S5593275A JP 39179 A JP39179 A JP 39179A JP 39179 A JP39179 A JP 39179A JP S5593275 A JPS5593275 A JP S5593275A
Authority
JP
Japan
Prior art keywords
wave
inp
layers
photo
resistance layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP39179A
Other languages
Japanese (ja)
Inventor
Yoshihisa Yamamoto
Hiroshi Kanbe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP39179A priority Critical patent/JPS5593275A/en
Publication of JPS5593275A publication Critical patent/JPS5593275A/en
Pending legal-status Critical Current

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  • Light Receiving Elements (AREA)

Abstract

PURPOSE: To conduct sequential wave-separation and detection of optical signal with multiple light wave-length through each diodes by forming multi-layers of photo-diode whose absorption edge wavelengthes are different from each other by degrees on the same substrate of semiconductor.
CONSTITUTION: On the basis of n+-InP substrate 1, layers n+-InP 2, p-InxGa1-x AsyP1-yP1-y 3, p+-InP 4, InP 5 and InP high-resistance layer 6 are piled up in consecutive order to form four steps, whose contituent ratio x:y is so selected that upper one of layers 3 has smaller band gap. So selected, wave length as λ1∼λ3 can be absorbed by layers 3-1∼3-3 in a selective way, respectively. In addition, high- resistance layer 6 is placed for giving inverted bias to photo-detectors of three units separately. When inverted bias is given between electrodes 6 and 7 in this composition respectively, light separated-wave detecting action is conducted, thus separated, wave detection for optical-signal with multiple wavelength by single device is possible without wave-separator.
COPYRIGHT: (C)1980,JPO&Japio
JP39179A 1979-01-09 1979-01-09 Semiconductor light wave separating detector Pending JPS5593275A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP39179A JPS5593275A (en) 1979-01-09 1979-01-09 Semiconductor light wave separating detector

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP39179A JPS5593275A (en) 1979-01-09 1979-01-09 Semiconductor light wave separating detector

Publications (1)

Publication Number Publication Date
JPS5593275A true JPS5593275A (en) 1980-07-15

Family

ID=11472498

Family Applications (1)

Application Number Title Priority Date Filing Date
JP39179A Pending JPS5593275A (en) 1979-01-09 1979-01-09 Semiconductor light wave separating detector

Country Status (1)

Country Link
JP (1) JPS5593275A (en)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58191479A (en) * 1982-04-30 1983-11-08 Kanegafuchi Chem Ind Co Ltd Photoelectric element and method for photo detection using thereof
JPS62179166A (en) * 1986-01-31 1987-08-06 Honda Motor Co Ltd Photodetector
US4711857A (en) * 1986-08-28 1987-12-08 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Tailorable infrared sensing device with strain layer superlattice structure
US4843439A (en) * 1985-08-28 1989-06-27 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Tailorable infrared sensing device with strain layer superlattice structure
JPH02119273A (en) * 1988-10-28 1990-05-07 Nec Corp Semiconductor photodetector
JPH0318069A (en) * 1989-06-14 1991-01-25 Matsushita Electron Corp Semiconductor photosensor
US5144397A (en) * 1989-03-03 1992-09-01 Mitsubishi Denki Kabushiki Kaisha Light responsive semiconductor device
US5285080A (en) * 1991-03-29 1994-02-08 Mitsubishi Denki Kabushiki Kaisha Method of selective light detection
US5479032A (en) * 1994-07-21 1995-12-26 Trustees Of Princeton University Multiwavelength infrared focal plane array detector
JP2012069941A (en) * 2010-09-16 2012-04-05 Commissariat A L'energie Atomique & Aux Energies Alternatives Multilayer bispectral photodiode detector
GB2494774A (en) * 2011-09-13 2013-03-20 Boeing Co Dichromatic photodiode

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5158086A (en) * 1974-11-18 1976-05-21 Mitsubishi Electric Corp
JPS5399889A (en) * 1977-02-14 1978-08-31 Nippon Telegr & Teleph Corp <Ntt> Composite photo detector

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5158086A (en) * 1974-11-18 1976-05-21 Mitsubishi Electric Corp
JPS5399889A (en) * 1977-02-14 1978-08-31 Nippon Telegr & Teleph Corp <Ntt> Composite photo detector

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58191479A (en) * 1982-04-30 1983-11-08 Kanegafuchi Chem Ind Co Ltd Photoelectric element and method for photo detection using thereof
US4843439A (en) * 1985-08-28 1989-06-27 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Tailorable infrared sensing device with strain layer superlattice structure
JPS62179166A (en) * 1986-01-31 1987-08-06 Honda Motor Co Ltd Photodetector
US4711857A (en) * 1986-08-28 1987-12-08 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Tailorable infrared sensing device with strain layer superlattice structure
JPH02119273A (en) * 1988-10-28 1990-05-07 Nec Corp Semiconductor photodetector
US5144397A (en) * 1989-03-03 1992-09-01 Mitsubishi Denki Kabushiki Kaisha Light responsive semiconductor device
JPH0318069A (en) * 1989-06-14 1991-01-25 Matsushita Electron Corp Semiconductor photosensor
US5285080A (en) * 1991-03-29 1994-02-08 Mitsubishi Denki Kabushiki Kaisha Method of selective light detection
US5479032A (en) * 1994-07-21 1995-12-26 Trustees Of Princeton University Multiwavelength infrared focal plane array detector
JP2012069941A (en) * 2010-09-16 2012-04-05 Commissariat A L'energie Atomique & Aux Energies Alternatives Multilayer bispectral photodiode detector
GB2494774A (en) * 2011-09-13 2013-03-20 Boeing Co Dichromatic photodiode
JP2013062504A (en) * 2011-09-13 2013-04-04 Boeing Co:The Dichromatic photodiodes
US8816461B2 (en) 2011-09-13 2014-08-26 The Boeing Company Dichromatic photodiodes
GB2494774B (en) * 2011-09-13 2015-09-16 Boeing Co Dichromatic photodiodes

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