US3478214A - Photodetector responsive to light intensity in different spectral bands - Google Patents

Photodetector responsive to light intensity in different spectral bands Download PDF

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US3478214A
US3478214A US527839A US3478214DA US3478214A US 3478214 A US3478214 A US 3478214A US 527839 A US527839 A US 527839A US 3478214D A US3478214D A US 3478214DA US 3478214 A US3478214 A US 3478214A
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layer
layers
light intensity
photodetector
spectral bands
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US527839A
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Norman G Dillman
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Boeing North American Inc
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North American Rockwell Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/041—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L31/00
    • H01L25/043—Stacked arrangements of devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Definitions

  • a photodetector device comprising a plurality of successive layers of semiconductor material having a band gap energy greater than the preceding layer.
  • a plurality of electrical ohmic contacts corresponding in number to the plurality of semiconductor layers are connected one to. each layer so as to provide for the pickoff of signals.
  • This invention relates to a photodetectordevice and more particularly it relates to a photodetector which provides an output signal proportional to light intensity in different spectral bands.
  • An object of the present invention is to provide an improved photodetector device.
  • Another object of the present invention is to provide a photodetector device which will provide output signals that are proportional to light intensity in different spectral bands.
  • FIG. 1 is a top view of the preferred embodiment of the invention.
  • FIG. 2 is a cross-sectional view of the embodiment of FIG. 1 taken along the lines 22, looking in the direction of the arrows.
  • the substrate 10 of conductive material provides the base on which a thin disclike layer of semiconductor material 13 is grown or deposited.
  • a thin disc-like layer of semiconductor material 12 is grown or deposited onto layer 13 so as to form a heterojunction with layer 13.
  • the band gap energy of the material of layer 12 is greater than that of the material of layer 13.
  • a thin disc-like layer of semiconductor material 11 is grown or deposited onto layer 12 forming a second heterojunction with layer 12; the diameter of the disc of layer 11 is less than the diameter of discs 12 and 13.
  • the band gap energy of the material used in layer 11 is greater than that of the material of layer 12.
  • An ohmic contact is attached to layer 12 and a similar ohmic contact 14 is attached to layer 11.
  • the ohmic contacts 14 and 15 are ring-like in shape.
  • N +1 different semiconductor materials are grown or deposited in thin layers on the conducting substrate 10 which serves as an ohmic contact and also provides support for the successive layers of semiconductor material. To each layer an ohmic contact is attached so that the voltage generated by each heterojunction may be detected. If the semiconductor material used for the layers were of the photoresistive type rather than of photoelectric type the contacts could be used to detect the change in resistance of the heterojunctions.
  • E E i.e., the band gap energy is always closer to the surface
  • A the Wavelength E is the band gap energy
  • h Plancks constant
  • c the speed of light
  • the absorption edge of the surface material is at a shorter wavelength than the remaining layers and it will be transparent to wavelengths longer than the absorption edge wavelength to a first approximation. The same argument holds for each layer.
  • the light absorbed at the i-th layer is detected as a photovoltage across the (il, i) junction.
  • the layers of semiconductor material are disc-like in construction but it is to be understood that such shape is not to be construed as being restrictive. Other shapes may be used without departing from the scope of the invention.
  • the ohmic contacts are shown as ring-like in shape but again it would be obvious to use segmented contacts or point type contacts to perform the same function.
  • a photosensitive device comprising: a plurality of successive layers of partially transparent, semiconductor material each successive layer having a band gap energy greater than the preceding layer;
  • means for determining the light intensity impinging upon the photosensitive device in different spectral bands said means comprising means for determining the voltages respectively across one or more of said layers.
  • one of said layers is, silicon, another is gallium phosphide, and another is boron zinc sulfide.
  • Aphotodetector comprising: I
  • means for determining the light intensity impinging upon the photodetector in dilferent spectral bands comprising means for determining the voltages respectively across one or more of said layers.

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Light Receiving Elements (AREA)

Description

Nov. 11, 1969 N. 5. DILLMAN 3,478,214
PHOTODETECTOR RESPONSIVE TO LIGHT INTENSITY IN DIFFERENT SPECTRAL BANDS Filed Feb. 16, 1966 VOLTAGE DETECTOR INCIDENT UGHT INVENTOR. NORMAN G. DILLMAN E'ZQwaAQ AGENT FIG.2
United States Patent US. Cl. 250-211 9 Claims ABSTRACT OF THE DISCLOSURE" A photodetector device is provided comprising a plurality of successive layers of semiconductor material having a band gap energy greater than the preceding layer. A plurality of electrical ohmic contacts corresponding in number to the plurality of semiconductor layers are connected one to. each layer so as to provide for the pickoff of signals.
This invention relates to a photodetectordevice and more particularly it relates to a photodetector which provides an output signal proportional to light intensity in different spectral bands.
An object of the present invention is to provide an improved photodetector device.
Another object of the present invention is to provide a photodetector device which will provide output signals indicative of the spectral content of the light impinging on it.
Another object of the present invention is to provide a photodetector device which will provide output signals that are proportional to light intensity in different spectral bands.
These and other objects of the invention will become more apparent when taken with the following description and in conjunction with the drawings in which:
FIG. 1 is a top view of the preferred embodiment of the invention; and
FIG. 2 is a cross-sectional view of the embodiment of FIG. 1 taken along the lines 22, looking in the direction of the arrows.
In accordance with the present invention and the attainment of the preceding objects a photodetector device is provided comprising a plurality of successive layers of semiconductor material each of said successive layers of semiconductor material having a band gap energy greater than the preceding layer. A plurality of electrical ohmic contacts corresponding in number to the plurality of semiconductor layers are connected one to each layer so as to provide for the pickoff of signals.
Referring to FIGS. 1 and 2, the substrate 10 of conductive material provides the base on which a thin disclike layer of semiconductor material 13 is grown or deposited. A thin disc-like layer of semiconductor material 12 is grown or deposited onto layer 13 so as to form a heterojunction with layer 13. The band gap energy of the material of layer 12 is greater than that of the material of layer 13.
A thin disc-like layer of semiconductor material 11 is grown or deposited onto layer 12 forming a second heterojunction with layer 12; the diameter of the disc of layer 11 is less than the diameter of discs 12 and 13. The band gap energy of the material used in layer 11 is greater than that of the material of layer 12. An ohmic contact is attached to layer 12 and a similar ohmic contact 14 is attached to layer 11. The ohmic contacts 14 and 15 are ring-like in shape.
More generally; in order to obtain N heterojunctions, N +1 different semiconductor materials are grown or deposited in thin layers on the conducting substrate 10 which serves as an ohmic contact and also provides support for the successive layers of semiconductor material. To each layer an ohmic contact is attached so that the voltage generated by each heterojunction may be detected. If the semiconductor material used for the layers were of the photoresistive type rather than of photoelectric type the contacts could be used to detect the change in resistance of the heterojunctions.
Now, letting the subscript i denote a certain semiconductor material starting with 1 at the surface or furthest layer from the substrate and continuing consecutively to layer N at the substrate. The spectral band detected at the i, i+l junction is given by:
if E E i.e., the band gap energy is always closer to the surface, where wherein A is the Wavelength E is the band gap energy h is Plancks constant, and c is the speed of light The absorption edge of the surface material is at a shorter wavelength than the remaining layers and it will be transparent to wavelengths longer than the absorption edge wavelength to a first approximation. The same argument holds for each layer. The light absorbed at the i-th layer is detected as a photovoltage across the (il, i) junction.
Referring to the photodetector of FIG. 2 which has two junctions. If E i E E then the voltage V is proportional to the incident light intensity between the wavelengths =hc/E, and =hc/E The spectrum for V is from A =hc/E to k =hc/E By dividing the spectrum into two bands, such a photodetector could be used to roughly determine star color. Another photodetector with three heterojunctions that trisected the visible spectrum (that is, responded to those colors) could be used to determine visible color.
Semiconductor material that may be used for layers 11, 12 and 13 are listed below along with their respective band gap energies.
In the particular embodiment shown, the layers of semiconductor material are disc-like in construction but it is to be understood that such shape is not to be construed as being restrictive. Other shapes may be used without departing from the scope of the invention. The ohmic contacts are shown as ring-like in shape but again it would be obvious to use segmented contacts or point type contacts to perform the same function.
It is therefore intended that the invention only be limited in spirit and scope by the appended claims.
What is claimed is: 1. A photosensitive device comprising: a plurality of successive layers of partially transparent, semiconductor material each successive layer having a band gap energy greater than the preceding layer;
means for projecting light on the device in the direction of decreasing band gap energy;
means for determining the light intensity impinging upon the photosensitive device in different spectral bands, said means comprising means for determining the voltages respectively across one or more of said layers.
2. The device of claim 1 wherein said voltage is detected across adjacent layers.
3. The device of claim 1 wherein said plurality of layers form a plurality of heterojunctions.
4. The device of claim 1 wherein said layers of semiconductor material are grown one upon the other so as to form a photodetector device which is a single crystal.
5. The device of claim 1 wherein one of said layers is, silicon, another is gallium phosphide, and another is boron zinc sulfide.
6. The device of claim 1 wherein the material of said successive layers are designated by the subscript i and each layer is designated successively 1 through N such that the spectral band detected between the i, i+l layers is determined by the formula;
wherein where A is the wavelength E is the band gap energy h is Plancks constant, and c is the speed of light.
7. A photodetector device comprising: a conductive layer forming a first electrical contact; a first layer of partially transparent semiconductor material deposited onto said conductive layer; a second layer of partially transparent semiconductor material having a hand gap energy greater than the band gap energy of said first layer of semiconductor 3 material deposited onto said first layer;
a second electrical contact in ohmic connection with said second layer;
a third layer of partially transparent semiconductor -material having a band gap energy greater than the band gap energy of said second layer of semiconductor material deposited onto said second layer;
means for projecting light on the device in the direction of decreasing band gap energy;
a third electrical contact in ohmic connection with said third layer; and
means for determining the light intensity impinging upon the photodetector device in different spectral bands, said means comprising means for determining the voltages respectively across one or more of said layers.
8. Aphotodetector comprising: I
a plurality of successive layers of partially transparent semiconductor material forming a plurality of successive heterojunctions, said successive heterojunctions being responsive to successive absorption wavelengths of said layers;
means for projecting light on the photodetector in the direction of increasing absorpiton wavelengths;
means for determining the light intensity impinging upon the photodetector in dilferent spectral bands, said means comprising means for determining the voltages respectively across one or more of said layers.
9 The combination recited in claim 8 wherein said References Cited UNITED STATES PATENTS 8/1960 Jackson 250211 X 6/ 1967 Weinstein 317-235 X WALTER STOLWEIN, Primary Examiner US. Cl. X.R.
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Cited By (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3604987A (en) * 1968-12-06 1971-09-14 Rca Corp Radiation-sensing device comprising an array of photodiodes and switching devices in a body of semiconductor material
US3611069A (en) * 1969-11-12 1971-10-05 Gen Electric Multiple color light emitting diodes
US3670213A (en) * 1969-05-24 1972-06-13 Tokyo Shibaura Electric Co Semiconductor photosensitive device with a rare earth oxide compound forming a rectifying junction
US3704375A (en) * 1970-05-05 1972-11-28 Barnes Eng Co Monolithic detector construction of photodetectors
US3717724A (en) * 1971-02-02 1973-02-20 Westinghouse Electric Corp Solid state multi-color sensor
US3761718A (en) * 1972-09-07 1973-09-25 Honeywell Inc Detector apparatus using semiconductor laminae
US3868503A (en) * 1973-04-26 1975-02-25 Us Navy Monochromatic detector
US3924150A (en) * 1971-12-28 1975-12-02 Matsushita Electric Ind Co Ltd Turnable phototransducers
US3955082A (en) * 1974-09-19 1976-05-04 Northern Electric Company Limited Photodiode detector with selective frequency response
US4011016A (en) * 1974-04-30 1977-03-08 Martin Marietta Corporation Semiconductor radiation wavelength detector
US4174978A (en) * 1978-05-11 1979-11-20 Chubrikov Boris A Semiconductor photovoltaic generator and method of fabricating thereof
FR2431771A1 (en) * 1978-07-21 1980-02-15 Sumitomo Electric Industries MULTIPLE PHOTODIODES
US4196263A (en) * 1977-05-03 1980-04-01 Bell Telephone Laboratories, Incorporated Semiconductor devices with enhanced properties
EP0010828A1 (en) * 1978-09-25 1980-05-14 Rca Corporation Amorphous silicon solar cell allowing infrared transmission
US4238760A (en) * 1978-10-06 1980-12-09 Recognition Equipment Incorporated Multi-spectrum photodiode devices
WO1983000257A1 (en) * 1981-07-06 1983-01-20 Beckman Instruments Inc Radiant energy detection apparatus
EP0083986A2 (en) * 1982-01-13 1983-07-20 Fuji Xerox Co., Ltd. Polychromatic image sensor
US4607272A (en) * 1983-10-06 1986-08-19 The United States Of America As Represented By The United States Department Of Energy Electro-optical SLS devices for operating at new wavelength ranges
US5059786A (en) * 1990-05-04 1991-10-22 The United States Of America As Represented By The Secretary Of The Navy Multi-color coincident infrared detector
US5592124A (en) * 1995-06-26 1997-01-07 Burr-Brown Corporation Integrated photodiode/transimpedance amplifier
US5621238A (en) * 1994-02-25 1997-04-15 The United States Of America As Represented By The Secretary Of The Air Force Narrow band semiconductor detector

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2949498A (en) * 1955-10-31 1960-08-16 Texas Instruments Inc Solar energy converter
US3328584A (en) * 1964-01-17 1967-06-27 Int Rectifier Corp Five-layer light switch

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2949498A (en) * 1955-10-31 1960-08-16 Texas Instruments Inc Solar energy converter
US3328584A (en) * 1964-01-17 1967-06-27 Int Rectifier Corp Five-layer light switch

Cited By (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3604987A (en) * 1968-12-06 1971-09-14 Rca Corp Radiation-sensing device comprising an array of photodiodes and switching devices in a body of semiconductor material
US3670213A (en) * 1969-05-24 1972-06-13 Tokyo Shibaura Electric Co Semiconductor photosensitive device with a rare earth oxide compound forming a rectifying junction
US3611069A (en) * 1969-11-12 1971-10-05 Gen Electric Multiple color light emitting diodes
US3704375A (en) * 1970-05-05 1972-11-28 Barnes Eng Co Monolithic detector construction of photodetectors
US3717724A (en) * 1971-02-02 1973-02-20 Westinghouse Electric Corp Solid state multi-color sensor
US3924150A (en) * 1971-12-28 1975-12-02 Matsushita Electric Ind Co Ltd Turnable phototransducers
US3761718A (en) * 1972-09-07 1973-09-25 Honeywell Inc Detector apparatus using semiconductor laminae
US3868503A (en) * 1973-04-26 1975-02-25 Us Navy Monochromatic detector
US4011016A (en) * 1974-04-30 1977-03-08 Martin Marietta Corporation Semiconductor radiation wavelength detector
US3955082A (en) * 1974-09-19 1976-05-04 Northern Electric Company Limited Photodiode detector with selective frequency response
US4196263A (en) * 1977-05-03 1980-04-01 Bell Telephone Laboratories, Incorporated Semiconductor devices with enhanced properties
US4174978A (en) * 1978-05-11 1979-11-20 Chubrikov Boris A Semiconductor photovoltaic generator and method of fabricating thereof
FR2431771A1 (en) * 1978-07-21 1980-02-15 Sumitomo Electric Industries MULTIPLE PHOTODIODES
EP0010828A1 (en) * 1978-09-25 1980-05-14 Rca Corporation Amorphous silicon solar cell allowing infrared transmission
US4238760A (en) * 1978-10-06 1980-12-09 Recognition Equipment Incorporated Multi-spectrum photodiode devices
WO1983000257A1 (en) * 1981-07-06 1983-01-20 Beckman Instruments Inc Radiant energy detection apparatus
EP0083986A2 (en) * 1982-01-13 1983-07-20 Fuji Xerox Co., Ltd. Polychromatic image sensor
EP0083986A3 (en) * 1982-01-13 1985-01-09 Fuji Xerox Co., Ltd. Polychromatic image sensor
US4607272A (en) * 1983-10-06 1986-08-19 The United States Of America As Represented By The United States Department Of Energy Electro-optical SLS devices for operating at new wavelength ranges
US5059786A (en) * 1990-05-04 1991-10-22 The United States Of America As Represented By The Secretary Of The Navy Multi-color coincident infrared detector
US5621238A (en) * 1994-02-25 1997-04-15 The United States Of America As Represented By The Secretary Of The Air Force Narrow band semiconductor detector
US5592124A (en) * 1995-06-26 1997-01-07 Burr-Brown Corporation Integrated photodiode/transimpedance amplifier
US5767538A (en) * 1995-06-26 1998-06-16 Burr-Brown Corporation Integrated photodiode/transimpedance amplifier

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