JPS54118190A - Multi-wavelength band photo detector - Google Patents

Multi-wavelength band photo detector

Info

Publication number
JPS54118190A
JPS54118190A JP2579378A JP2579378A JPS54118190A JP S54118190 A JPS54118190 A JP S54118190A JP 2579378 A JP2579378 A JP 2579378A JP 2579378 A JP2579378 A JP 2579378A JP S54118190 A JPS54118190 A JP S54118190A
Authority
JP
Japan
Prior art keywords
wavelength band
layer
photo detector
light
optical signals
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2579378A
Other languages
Japanese (ja)
Inventor
Akiyuki Serizawa
Katsuji Hattori
Tsutomu Tanaka
Yoshinobu Tsujimoto
Osamu Kamata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP2579378A priority Critical patent/JPS54118190A/en
Publication of JPS54118190A publication Critical patent/JPS54118190A/en
Pending legal-status Critical Current

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  • Light Receiving Elements (AREA)

Abstract

PURPOSE: To draw out the plural optical signals in separation and by one wavelength band by converting the light of one wavelength band into one electric signal via the 1st photo detector and then converting the light of other wavelength band into other electric signal via the 2nd photo detector respectively.
CONSTITUTION: N-type layer 10, P-type layer 11 and N-type layer 12 are grown in lamination on N-type semiconductor substrate 9, and the electrodes are drawn out from substrate 9, layer 11 and 12 each and with application of the voltage to secure the backward bias applied. In this case, the junction interface between layer 10 and 11 is turned previously to the band cap which can absorb the optical signal of the λ2 wavelength band, and at the same time both the gap and the thickness are selected at layer 11 and 12 so that only the optical signal of the λ1 wavelength band is absorbed and the optical signal of λ2 is transmitted through. In such constitution, the separate detection becomes possible the optical signals of λ1 and λ2 at terminal 13 and 14 respectively when the light enters the highest layer 14. Thus, the plural optical signals can be obtained with reduction of the light loss.
COPYRIGHT: (C)1979,JPO&Japio
JP2579378A 1978-03-06 1978-03-06 Multi-wavelength band photo detector Pending JPS54118190A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2579378A JPS54118190A (en) 1978-03-06 1978-03-06 Multi-wavelength band photo detector

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2579378A JPS54118190A (en) 1978-03-06 1978-03-06 Multi-wavelength band photo detector

Publications (1)

Publication Number Publication Date
JPS54118190A true JPS54118190A (en) 1979-09-13

Family

ID=12175704

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2579378A Pending JPS54118190A (en) 1978-03-06 1978-03-06 Multi-wavelength band photo detector

Country Status (1)

Country Link
JP (1) JPS54118190A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5516479A (en) * 1978-07-21 1980-02-05 Sumitomo Electric Ind Ltd Heterojunction light receiving diode

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5516479A (en) * 1978-07-21 1980-02-05 Sumitomo Electric Ind Ltd Heterojunction light receiving diode

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