JPH0318069A - Semiconductor photosensor - Google Patents
Semiconductor photosensorInfo
- Publication number
- JPH0318069A JPH0318069A JP1151896A JP15189689A JPH0318069A JP H0318069 A JPH0318069 A JP H0318069A JP 1151896 A JP1151896 A JP 1151896A JP 15189689 A JP15189689 A JP 15189689A JP H0318069 A JPH0318069 A JP H0318069A
- Authority
- JP
- Japan
- Prior art keywords
- light receiving
- light
- energy gap
- receiving part
- receiving device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 16
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims 1
- 239000000956 alloy Substances 0.000 claims 1
- 229910045601 alloy Inorganic materials 0.000 claims 1
- 206010034972 Photosensitivity reaction Diseases 0.000 abstract 2
- 230000036211 photosensitivity Effects 0.000 abstract 2
- 230000035945 sensitivity Effects 0.000 description 7
- 230000003287 optical effect Effects 0.000 description 6
- 239000000758 substrate Substances 0.000 description 5
- 238000004891 communication Methods 0.000 description 4
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000013307 optical fiber Substances 0.000 description 2
- 229910001258 titanium gold Inorganic materials 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 240000002329 Inga feuillei Species 0.000 description 1
- 229910001128 Sn alloy Inorganic materials 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 230000004043 responsiveness Effects 0.000 description 1
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は半導体受光装置に関し、特にＳｉおよび化合物
半導体で形成された受光装置および発光装置の光半導体
素子のチップ構造に関する。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a semiconductor light-receiving device, and more particularly to a chip structure of an optical semiconductor element of a light-receiving device and a light-emitting device formed of Si and compound semiconductors.
従来の技術
光通信技術の発展にともない、近年、化合物半導体で形
戒された高性能で高信頼性のある受発光装置の研究開発
が行なわれている。BACKGROUND OF THE INVENTION With the development of optical communication technology, research and development has been conducted in recent years on high performance and highly reliable light receiving and emitting devices made of compound semiconductors.
従来、例えば受光装置の場合には、０．８５μｍ帯の光
検出としては、受光径φ１００〜４００μｍの大きさを
持つＳｉ−ＰＩＮフォトダイオードを用い、波長λ＝０
．８５μｍで量子効率７０％、遮断周波数１ ０ ０Ｍ
Ｈｚ〜ＩＧｔｌｚの素子が実現されている。これよりも
長波長帯では、ＧｅあるいはＩｎＧａＡｓ−ＰＩＮフォ
トダイオードが実用化されており、波長λ−１．３μｍ
で量子効率７０％、遮断周波数１００ＭＨｚ〜Ｉ ＧＨ
ｚの特性が得られている。Conventionally, for example, in the case of a light receiving device, a Si-PIN photodiode with a receiving diameter of φ100 to 400 μm is used to detect light in the 0.85 μm band, and the wavelength λ=0.
．． Quantum efficiency 70% at 85μm, cutoff frequency 100M
Hz to IGtlz elements have been realized. In a wavelength band longer than this, Ge or InGaAs-PIN photodiodes have been put into practical use, and have a wavelength of λ-1.3 μm.
quantum efficiency 70%, cutoff frequency 100MHz ~ IGH
The characteristics of z have been obtained.
また、受光装置の場合にも同様に、０，８５μｍ帯とし
ては、ＧａＡｉ！Ａｓ高速ＬＥＤが、１．３μｍ帯とし
ては、ＩｎＧａＡｓＰ高速ＬＥＤが既に実現化されてお
り、通信ケーブル網を初めとする光伝送分野に広く採用
されている。Similarly, in the case of a light receiving device, as for the 0.85 μm band, GaAi! As for As high-speed LEDs, InGaAsP high-speed LEDs have already been realized in the 1.3 μm band, and are widely used in optical transmission fields including communication cable networks.
発明が解決しようとする課題
以上のような秀れた特性を有する発受光素子を単独で用
いると、Ｓｉ−ＰＩＮフォトダイオードの場合には、波
長１．１μｍ以下の範囲では、充分な受光感度と遮断周
波数が確保され、安定な動作特性を示すが、波長１．２
μｍ以上の範囲に対しては、結晶自体の持つ吸収係数が
、急激に低下するため、受光感度の低下が著しい。Problems to be Solved by the Invention When a light emitting/receiving element having excellent characteristics as described above is used alone, in the case of a Si-PIN photodiode, sufficient light receiving sensitivity can be achieved in the wavelength range of 1.1 μm or less. Although the cutoff frequency is secured and stable operating characteristics are exhibited, the wavelength is 1.2.
In the range of .mu.m or more, the absorption coefficient of the crystal itself decreases rapidly, resulting in a significant decrease in light-receiving sensitivity.
このような理由から、光結合器などで、０．８５μｍ帯
の光ファイバ通信網と、１．３μｍ帯の光ファイバ通信
網を結合することができず、各々独立した伝送回路系を
使用せざるを得ない状況となっている。For these reasons, it is not possible to combine the 0.85 μm band optical fiber communication network with the 1.3 μm band optical fiber communication network using an optical coupler, and it is necessary to use independent transmission circuit systems for each. We are in a situation where we are unable to obtain any benefits.
一方、１．３μｍ帯の光検出では、前述のようにＧｅあ
るいはＩｎＧａＡｓ長波長ＰＩＮフォトダイオードが実
用化されており、１．０μｍ以上の波長領域では、高速
の信号検出が可能で受光感度も充分あるものの、０．８
５μｍ付近では、結晶の持つ吸収係数が非常に大きく、
Ｐｎ接合をたとえ浅く作ったとしても受光感度の大幅な
低下は避けられない。On the other hand, for light detection in the 1.3 μm band, Ge or InGaAs long-wavelength PIN photodiodes have been put into practical use as mentioned above, and in the wavelength region of 1.0 μm or more, high-speed signal detection is possible and light receiving sensitivity is sufficient. Although there is, 0.8
At around 5 μm, the absorption coefficient of the crystal is very large.
Even if the Pn junction is made shallow, a significant drop in light-receiving sensitivity cannot be avoided.
以上のように、一台の受光装置で、０．６μｍ〜１．６
μｍにおよぶ大幅な波長範囲にわたって、高い受光感度
と高い応答性を持つ受光装置を実現することは非常に困
難である。As mentioned above, with one light receiving device, 0.6 μm to 1.6 μm
It is extremely difficult to realize a light receiving device that has high light receiving sensitivity and high responsiveness over a wide wavelength range of μm.
本発明は、このような問題点をかえりみて、たとえば広
い波長領域にわたって安定した受光感度を持つ受光装置
を実現化できる方法を提供するものである。The present invention takes these problems into consideration and provides a method for realizing a light receiving device having stable light receiving sensitivity over a wide wavelength range, for example.
課題を解決するための手段
この目的を達成するために本発明の半導体装置は、２種
類以上の半導体受光装置を縦方向に配列し、上部に存在
する受光部のエネルギーギャップが下部に存在する受光
部のエネルギーギャップより大きく、各々の受光装置の
受光窓の中心軸が（ほぼ）一致している構成を有してい
る。Means for Solving the Problems In order to achieve this object, the semiconductor device of the present invention has two or more types of semiconductor light receiving devices arranged in the vertical direction, and the energy gap of the light receiving part existing in the upper part is replaced by the light receiving part existing in the lower part. The central axes of the light-receiving windows of each light-receiving device are (almost) aligned.
作用
この構成によって、短波長の光に対しては受光部のエネ
ルギーギャップが大きい上部の受光装置により検知し、
長波長の光に対しては受光部のエネルギーギャップの小
さい下部の受光装置により検知し、広い波長領域の光を
１つの受光装置により検知することができる。Effect: With this configuration, short wavelength light is detected by the upper light receiving device, which has a large energy gap in the light receiving section.
Long wavelength light can be detected by a lower light receiving device with a small energy gap in the light receiving section, and light in a wide wavelength range can be detected by one light receiving device.
実施例
本発明の半導体受光装置の実施例を第１図に示した受光
装置の断面図を参照して説明する。Embodiment An embodiment of the semiconductor light receiving device of the present invention will be described with reference to the sectional view of the light receiving device shown in FIG.
第１図は、液相成長法により作威された長波長ＩｎＧａ
ＡｓＰＩＮフォトダイオード９の上に絶縁膜層７を介し
てＳｉＰＩＮフォトダイオード１０が接着された構造で
ある。Figure 1 shows long-wavelength InGa produced by liquid phase growth.
In this structure, a SiPIN photodiode 10 is bonded onto an AsPIN photodiode 9 with an insulating film layer 7 interposed therebetween.
５〜８ Ｘ １ ０１１１（！ｌｍ−３のＳがドーブさ
れたｎＩｎＰ基板ｌの上に、ｎ形のＩｎＰ層２が形威さ
れ、このｎ−１ｎＰ層２の上に直径８０μｍのｎ−Ｉｎ
ＧａＡｓ層３，Ｐ”−１ｎＧａＡｓ層４が形成されてい
る。そして、Ｐ”−１ｎＧａＡｓ層４上に反射防止膜５
がコートされている。ＴｉＡｕで形成されたＰ型オーミ
ック電極６の上に絶縁膜７が形成され、この上にＳｎを
含む接着金属８が載っている。An n-type InP layer 2 is formed on an nInP substrate l doped with S of 5 to 8
A GaAs layer 3 and a P''-1nGaAs layer 4 are formed.An antireflection film 5 is formed on the P''-1nGaAs layer 4.
is coated. An insulating film 7 is formed on a P-type ohmic electrode 6 made of TiAu, and an adhesive metal 8 containing Sn is placed on this.
このような構造を持つ長波長ＰＩＮフォトダイオード９
の上部に受光領域の中心を合わせた短波長ＰＩＮフォト
ダイオード１０が搭載されている。Long wavelength PIN photodiode 9 with such a structure
A short wavelength PIN photodiode 10 whose light receiving area is centered is mounted on the top of the photodiode.
ｎ型Ｓｉ基板（比抵抗１〜３Ω・ｃｍ）１１上に高比抵
抗層１２（３００〜５００Ω・ｃｍ）を有し、この一部
を拡散によりＰ型層１３を形成している。１４．１５は
Ｐ型およびｎ型オーミック電極である。素子全体は表面
保護を目的としてＳｉ０２膜１６でおおわれた構造であ
る。Ｐ型層１３の直下のｎ型Ｓｉ基板１１には、ｎ型オ
ーミック金属１５を付けず、長波長の光が透過できるよ
うφ３００μｍの凹部が設けられている。A high resistivity layer 12 (300 to 500 Ω·cm) is formed on an n-type Si substrate 11 (specific resistance 1 to 3 Ω·cm), and a P-type layer 13 is formed by diffusion. 14.15 are P-type and n-type ohmic electrodes. The entire device is covered with a Si02 film 16 for surface protection. Immediately below the P-type layer 13, the n-type Si substrate 11 is not provided with the n-type ohmic metal 15, and a recessed portion having a diameter of 300 μm is provided so that long wavelength light can pass therethrough.
これらの長波長ＰＩＮフォトダイオード９とＳｉ−ＰＩ
Ｎフォトダイオード１０は、前述したＳｎを含むＡ ｕ
／ Ｓ ｎ合金８によって、接着されている。These long wavelength PIN photodiodes 9 and Si-PI
The N photodiode 10 includes the aforementioned Sn-containing A u
/Sn alloy 8 is used for adhesion.
Ｓｉ−ＰＩＮフォトダイオード単体の特性は、バで、量
子効率ｎ＝７０％，暗電流１ ｄ＝ｏ． ｌ ｎＡ，遮
断周波数ｆｃ＝３００ＭＨｚである。The characteristics of a single Si-PIN photodiode are as follows: quantum efficiency n=70%, dark current 1, d=o. l nA, cutoff frequency fc = 300 MHz.
長波長ＰＩＮフォトダイオード単体の特性は、波長λ＝
１．３μｍで量子効率η＝７０％，暗電流１ｄ＝１ｎＡ
，遮断周波数ｆｃ＝５００ＭＨｚである。The characteristics of a single long wavelength PIN photodiode are as follows: wavelength λ=
At 1.3μm, quantum efficiency η = 70%, dark current 1d = 1nA
, cutoff frequency fc=500MHz.
これらの素子は、絶縁膜７によって、電気的に完全に分
離されているので、全く独立した電極端子１７〜２０を
配置することによって、別々に動作させることが可能で
あり、上部に接着されたＳｉ−ＰＩＮフォトダイオード
のみを動作させることも、また、下部に存在する長波長
ＰＩＮフォトダイオードのみを単独で動作させることも
可能である。Since these elements are completely electrically isolated by the insulating film 7, they can be operated separately by arranging completely independent electrode terminals 17 to 20, and the It is also possible to operate only the Si-PIN photodiode or to operate only the long wavelength PIN photodiode located below.
さらに、Ｓｉの熱膨脹係数（２．５Ｘ１０−６ｄｅｇ
’）とＩｎＰの熱膨脹係数（４．７５Ｘ１０−６ｄｅｇ
）は、ほぼ近い値であり、熱圧着工程における結晶の歪
み等も少なく、高信頼性を有している。Furthermore, the coefficient of thermal expansion of Si (2.5X10-6deg
') and the coefficient of thermal expansion of InP (4.75X10-6deg
) are almost close values, there is little crystal distortion during the thermocompression bonding process, and the reliability is high.
なお実施例において上部の受光装置をＳｉＰＩＮフォト
ダイオード、下部の受光装置をＩ ｎＧａＡｓ−Ｐ Ｉ
Ｎフォトダイオードとじたが、地の材料を使った受光装
置、たとえば、ＳｉとＧｅ．ＩｎＰとＩｎＧａＡｓなど
の組み合わせとしてもよいことは言うまでもない。また
２種類以上の受光装置を組み合わせれば、さらに広い波
長領域の光を検知することができる。In this example, the upper light receiving device is a SiPIN photodiode, and the lower light receiving device is an InGaAs-PI photodiode.
N photodiodes are used, but photodetectors using basic materials, such as Si and Ge. Needless to say, a combination of InP and InGaAs may also be used. Furthermore, by combining two or more types of light receiving devices, it is possible to detect light in an even wider wavelength range.
発明の効果
本発明の半導体受光装置によれば、広い波長範囲にわた
って安定した受光感度を有する素子を実現することがで
きる。Effects of the Invention According to the semiconductor light receiving device of the present invention, an element having stable light receiving sensitivity over a wide wavelength range can be realized.
また、２つの受光部分が上，下方向に近接して配置され
ており、両者の光軸等を別々に調整する必要がなく光軸
調整が容易である。Further, since the two light receiving portions are arranged close to each other in the upper and lower directions, there is no need to separately adjust the optical axes of both parts, making it easy to adjust the optical axes.
第１図は本発明の一実施例における半導体受光装置の断
面図である。
１・・・・・・ｎ−１ｎＰ基板、２・・・・・・ｎ−１
ｎＰ層、３・・・・・・ｎ−１ｎＧａＡｓ層、４・・・
・・・Ｐ＋ＩｎＧａＡｓ層、５・・・・・・反射防止膜
、６・・・・・・Ｐ電極（ＴｉＡｕ）、７・・・・・・
絶縁膜、８・・・・・・Ｓｎを含む接着金属、９・・・
・・・長波長ＰＩＮフォトダイオード部分、ＩＯ・・・
・・・ＳｉＰＩＮフォトダイオード部分、１１・・・・
・・ｎ−Ｓｉ基板、１２・・・・・・高比抵抗層、ｌ３
・・・・・・Ｐ−Ｓｉ層、１４・・・・・・Ｐ電極、１
５・・・・・・Ｎ電極、ｌ６・・・・・・表面保護膜、
■７〜２０・・・・・・電極端子。FIG. 1 is a sectional view of a semiconductor light receiving device in one embodiment of the present invention. 1...n-1nP substrate, 2...n-1
nP layer, 3...n-1nGaAs layer, 4...
... P+InGaAs layer, 5 ... Antireflection film, 6 ... P electrode (TiAu), 7 ...
Insulating film, 8... Adhesive metal containing Sn, 9...
...Long wavelength PIN photodiode part, IO...
...SiPIN photodiode part, 11...
...n-Si substrate, 12... High resistivity layer, l3
...P-Si layer, 14 ...P electrode, 1
5... N electrode, l6... surface protective film,
■7-20... Electrode terminal.
Claims (3)
上部に存在する受光部のエネルギーギャップが下部に存
在する受光部のエネルギーギャップより大きいことを特
徴とする半導体受光装置。(1) Two or more types of semiconductor photodetectors are arranged vertically,
1. A semiconductor light-receiving device characterized in that an energy gap of a light-receiving section located in an upper part is larger than an energy gap of a light-receiving part located in a lower part.
実質的に一致させ、スズ（Ｓｎ）を含む合金により接着
されていることを特徴とする特許請求範囲第１項記載の
半導体受光装置。(2) The semiconductor light receiving device according to claim 1, wherein the central axes of the light receiving windows of two or more types of semiconductor light receiving devices are made to substantially coincide with each other and are bonded together with an alloy containing tin (Sn). Device.
して電気的に接続されていることを特徴とする特許請求
範囲第１項または第２項記載の半導体受光装置。(3) The semiconductor light receiving device according to claim 1 or 2, wherein the light receiving devices arranged in the vertical direction are electrically connected via an insulating film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1151896A JPH0318069A (en) | 1989-06-14 | 1989-06-14 | Semiconductor photosensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1151896A JPH0318069A (en) | 1989-06-14 | 1989-06-14 | Semiconductor photosensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0318069A true JPH0318069A (en) | 1991-01-25 |
Family
ID=15528563
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1151896A Pending JPH0318069A (en) | 1989-06-14 | 1989-06-14 | Semiconductor photosensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0318069A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5373182A (en) * | 1993-01-12 | 1994-12-13 | Santa Barbara Research Center | Integrated IR and visible detector |
| WO2011007703A1 (en) * | 2009-07-13 | 2011-01-20 | 浜松ホトニクス株式会社 | Photodetector |
| JP4897675B2 (en) * | 2004-07-01 | 2012-03-14 | グレート スタッフ インコーポレイテッド | System and method for controlling the winding of a linear tool |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5593275A (en) * | 1979-01-09 | 1980-07-15 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor light wave separating detector |
| JPS60251678A (en) * | 1984-05-28 | 1985-12-12 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor light-receiving element |
-
1989
- 1989-06-14 JP JP1151896A patent/JPH0318069A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5593275A (en) * | 1979-01-09 | 1980-07-15 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor light wave separating detector |
| JPS60251678A (en) * | 1984-05-28 | 1985-12-12 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor light-receiving element |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5373182A (en) * | 1993-01-12 | 1994-12-13 | Santa Barbara Research Center | Integrated IR and visible detector |
| JP4897675B2 (en) * | 2004-07-01 | 2012-03-14 | グレート スタッフ インコーポレイテッド | System and method for controlling the winding of a linear tool |
| WO2011007703A1 (en) * | 2009-07-13 | 2011-01-20 | 浜松ホトニクス株式会社 | Photodetector |
| JP2011023400A (en) * | 2009-07-13 | 2011-02-03 | Hamamatsu Photonics Kk | Photodetector |
| CN102473790A (en) * | 2009-07-13 | 2012-05-23 | 浜松光子学株式会社 | Photodetector |
| US8564036B2 (en) | 2009-07-13 | 2013-10-22 | Hamamatsu Photonics K.K. | Photodetector for detecting energy line in a first wavelength region and in a second wavelength region |
| TWI502725B (en) * | 2009-07-13 | 2015-10-01 | Hamamatsu Photonics Kk | Photodetector |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6683326B2 (en) | Semiconductor photodiode and an optical receiver | |
| US6043550A (en) | Photodiode and photodiode module | |
| Averine et al. | Geometry optimization of interdigitated Schottky-barrier metal–semiconductor–metal photodiode structures | |
| JP2706029B2 (en) | pin diode | |
| JPH077166A (en) | Method for using high power capacitance optical receiver and photodetector dispersedly arranged | |
| KR960001190B1 (en) | Photo-detector | |
| EP0901170A1 (en) | Wavelength selective photodiode and module comprising the same | |
| CA2331992A1 (en) | High speed semiconductor photodetector | |
| US20020110950A1 (en) | Method of fabricating a light receiving device | |
| US20020135036A1 (en) | Semiconductor photodetector, semiconductor photo receiver and semiconductor device | |
| JP3419312B2 (en) | Light receiving element and light receiving element module | |
| CN101521244A (en) | Semiconductor light-reception element | |
| JP4755341B2 (en) | Highly doped p-type contact for high speed front illuminated photodiodes | |
| JP2661341B2 (en) | Semiconductor light receiving element | |
| TWI818027B (en) | Universal broadband photodetector design and fabrication process | |
| JPH0318069A (en) | Semiconductor photosensor | |
| JPS5812377A (en) | High speed photoelectric detecting element and method of producing same | |
| JPS62254473A (en) | Iii-v multi-element compound semiconductor pin photo diode | |
| JP3427125B2 (en) | Semiconductor device with optical lens function | |
| JPH04263475A (en) | Semiconductor photodetector and manufacture thereof | |
| JPS6222473B2 (en) | ||
| JP2945438B2 (en) | Optical semiconductor device and optical receiver using the same | |
| JP2004158763A (en) | Semiconductor photo detector | |
| WO2023199403A1 (en) | Light-receiving element | |
| JPH0480973A (en) | Semiconductor photodetector |