FR3041815B1 - Photodetecteur comprenant un empilement de couches superposees - Google Patents

Photodetecteur comprenant un empilement de couches superposees Download PDF

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Publication number
FR3041815B1
FR3041815B1 FR1501985A FR1501985A FR3041815B1 FR 3041815 B1 FR3041815 B1 FR 3041815B1 FR 1501985 A FR1501985 A FR 1501985A FR 1501985 A FR1501985 A FR 1501985A FR 3041815 B1 FR3041815 B1 FR 3041815B1
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FR
France
Prior art keywords
doped
undoped
photodetector
layer forming
stack
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR1501985A
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English (en)
Other versions
FR3041815A1 (fr
Inventor
Jean Luc Reverchon
Philippe Bois
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Thales SA
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA, Thales SA, Commissariat a lEnergie Atomique et aux Energies Alternatives CEA filed Critical Commissariat a lEnergie Atomique CEA
Priority to FR1501985A priority Critical patent/FR3041815B1/fr
Priority to EP16778718.3A priority patent/EP3353818A1/fr
Priority to US15/762,940 priority patent/US10872997B2/en
Priority to PCT/EP2016/072760 priority patent/WO2017051005A1/fr
Publication of FR3041815A1 publication Critical patent/FR3041815A1/fr
Priority to IL258329A priority patent/IL258329B/en
Application granted granted Critical
Publication of FR3041815B1 publication Critical patent/FR3041815B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/09—Devices sensitive to infrared, visible or ultraviolet radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/109—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN heterojunction type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L31/03046—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Light Receiving Elements (AREA)

Abstract

La présente invention concerne un photodétecteur comportant successivement le long d'une direction d'empilement : - une première couche formant un substrat en un premier matériau semi-conducteur , - une deuxième couche formant une couche photo-absorbante en un deuxième matériau semi-conducteur présentant un deuxième gap, - une troisième couche formant une couche barrière en un troisième matériau semi-conducteur, et - une quatrième couche formant une couche fenêtre en un quatrième matériau semi-conducteur, le premier matériau, le troisième matériau et le quatrième matériau présentant chacun un gap supérieur au deuxième gap, le quatrième matériau étant dopé n ou non dopé et le troisième matériau étant non dopé ou faiblement dopé p lorsque le deuxième matériau est dopé n, et le quatrième matériau étant dopé p ou non dopé et le troisième matériau étant non dopé ou faiblement dopé n lorsque le deuxième matériau est dopé p.
FR1501985A 2015-09-25 2015-09-25 Photodetecteur comprenant un empilement de couches superposees Active FR3041815B1 (fr)

Priority Applications (5)

Application Number Priority Date Filing Date Title
FR1501985A FR3041815B1 (fr) 2015-09-25 2015-09-25 Photodetecteur comprenant un empilement de couches superposees
EP16778718.3A EP3353818A1 (fr) 2015-09-25 2016-09-23 Photodétecteur comprenant un empilement de couches superposées
US15/762,940 US10872997B2 (en) 2015-09-25 2016-09-23 Photodetector comprising a stack of vertically adjacent layers
PCT/EP2016/072760 WO2017051005A1 (fr) 2015-09-25 2016-09-23 Photodétecteur comprenant un empilement de couches superposées
IL258329A IL258329B (en) 2015-09-25 2018-03-25 Photodetector comprising a stack of vertically adjacent layers

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1501985 2015-09-25
FR1501985A FR3041815B1 (fr) 2015-09-25 2015-09-25 Photodetecteur comprenant un empilement de couches superposees

Publications (2)

Publication Number Publication Date
FR3041815A1 FR3041815A1 (fr) 2017-03-31
FR3041815B1 true FR3041815B1 (fr) 2020-02-21

Family

ID=55542697

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1501985A Active FR3041815B1 (fr) 2015-09-25 2015-09-25 Photodetecteur comprenant un empilement de couches superposees

Country Status (5)

Country Link
US (1) US10872997B2 (fr)
EP (1) EP3353818A1 (fr)
FR (1) FR3041815B1 (fr)
IL (1) IL258329B (fr)
WO (1) WO2017051005A1 (fr)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108417663B (zh) * 2018-04-10 2023-11-07 中国科学院上海技术物理研究所 一种用来测量超晶格材料少子横向扩散长度的器件结构
CN111129187B (zh) * 2018-10-30 2022-11-08 中国科学院苏州纳米技术与纳米仿生研究所 红外光探测器及其制作方法
CN115020526A (zh) * 2022-06-07 2022-09-06 中科爱毕赛思(常州)光电科技有限公司 NBp势垒型超晶格高温中波红外探测器及其制作方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB8417303D0 (en) 1984-07-06 1984-08-08 Secr Defence Infra-red detector
FR2780203B1 (fr) 1998-06-23 2003-07-04 Thomson Csf Detecteur a puits quantique avec couche de stockage des electrons photoexcites
IL156744A (en) 2003-07-02 2011-02-28 Semi Conductor Devices An Elbit Systems Rafael Partnership Depletion-less photodiode with suppressed dark current
JP2006237186A (ja) * 2005-02-24 2006-09-07 Mitsubishi Electric Corp 半導体受光素子およびその製造方法
IL174844A (en) * 2006-04-06 2011-02-28 Semi Conductor Devices An Elbit Systems Rafael Partnership Unipolar semiconductor photodetector with suppressed dark current and method for producing the same
US8044435B2 (en) 2006-11-14 2011-10-25 Lockheed Martin Corporation Sub-pixel nBn detector
US8835979B1 (en) * 2010-06-04 2014-09-16 Hrl Laboratories, Llc Compound-barrier infrared photodetector
US9548408B2 (en) * 2014-04-15 2017-01-17 L-3 Communications Cincinnati Electronics Corporation Tunneling barrier infrared detector devices
JP6454981B2 (ja) * 2014-04-24 2019-01-23 住友電気工業株式会社 半導体積層体および受光素子

Also Published As

Publication number Publication date
IL258329A (en) 2018-05-31
US10872997B2 (en) 2020-12-22
WO2017051005A1 (fr) 2017-03-30
US20180233619A1 (en) 2018-08-16
EP3353818A1 (fr) 2018-08-01
IL258329B (en) 2022-05-01
FR3041815A1 (fr) 2017-03-31

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