DE69131410T2 - Lawinenphotodiode - Google Patents

Lawinenphotodiode

Info

Publication number
DE69131410T2
DE69131410T2 DE69131410T DE69131410T DE69131410T2 DE 69131410 T2 DE69131410 T2 DE 69131410T2 DE 69131410 T DE69131410 T DE 69131410T DE 69131410 T DE69131410 T DE 69131410T DE 69131410 T2 DE69131410 T2 DE 69131410T2
Authority
DE
Germany
Prior art keywords
avalanche photodiode
avalanche
photodiode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69131410T
Other languages
English (en)
Other versions
DE69131410D1 (de
Inventor
Kikuo Makita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Publication of DE69131410D1 publication Critical patent/DE69131410D1/de
Application granted granted Critical
Publication of DE69131410T2 publication Critical patent/DE69131410T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes
    • H01L31/1075—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes in which the active layers, e.g. absorption or multiplication layers, form an heterostructure, e.g. SAM structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035236—Superlattices; Multiple quantum well structures

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Optics & Photonics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Light Receiving Elements (AREA)
DE69131410T 1990-04-18 1991-04-18 Lawinenphotodiode Expired - Fee Related DE69131410T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2102454A JP2937404B2 (ja) 1990-04-18 1990-04-18 半導体受光素子

Publications (2)

Publication Number Publication Date
DE69131410D1 DE69131410D1 (de) 1999-08-12
DE69131410T2 true DE69131410T2 (de) 1999-11-18

Family

ID=14327919

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69131410T Expired - Fee Related DE69131410T2 (de) 1990-04-18 1991-04-18 Lawinenphotodiode

Country Status (5)

Country Link
US (1) US5187553A (de)
EP (1) EP0452927B1 (de)
JP (1) JP2937404B2 (de)
CA (1) CA2040767A1 (de)
DE (1) DE69131410T2 (de)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0506127B1 (de) * 1991-03-28 1999-06-09 Nec Corporation Halbleiterphotodetektor mit Lawinenmultiplikation
JP2998375B2 (ja) * 1991-12-20 2000-01-11 日本電気株式会社 アバランシェフォトダイオード
US5311009A (en) * 1992-07-31 1994-05-10 At&T Bell Laboratories Quantum well device for producing localized electron states for detectors and modulators
JPH07115184A (ja) * 1993-08-24 1995-05-02 Canon Inc 積層型固体撮像装置及びその製造方法
US5583352A (en) * 1994-04-29 1996-12-10 Eg&G Limited Low-noise, reach-through, avalanche photodiodes
JP3018976B2 (ja) * 1995-12-28 2000-03-13 富士ゼロックス株式会社 半導体受光素子
US5771256A (en) * 1996-06-03 1998-06-23 Bell Communications Research, Inc. InP-based lasers with reduced blue shifts
JP2001332759A (ja) 2000-03-16 2001-11-30 Matsushita Electric Ind Co Ltd アバランシェフォトダイオード
US7045833B2 (en) * 2000-09-29 2006-05-16 Board Of Regents, The University Of Texas System Avalanche photodiodes with an impact-ionization-engineered multiplication region
KR100424455B1 (ko) * 2001-06-28 2004-03-26 삼성전자주식회사 역적층 구조를 갖는 평면형 애벌랜치 포토다이오드
JP2003168818A (ja) * 2001-09-18 2003-06-13 Anritsu Corp 順メサ型アバランシェフォトダイオード及びその製造方法
US7348607B2 (en) * 2002-02-01 2008-03-25 Picometrix, Llc Planar avalanche photodiode
US8120079B2 (en) * 2002-09-19 2012-02-21 Quantum Semiconductor Llc Light-sensing device for multi-spectral imaging
JP5015494B2 (ja) * 2006-05-22 2012-08-29 住友電工デバイス・イノベーション株式会社 半導体受光素子
US8239176B2 (en) * 2008-02-13 2012-08-07 Feng Ma Simulation methods and systems for carriers having multiplications
JP5736922B2 (ja) * 2011-04-08 2015-06-17 住友電気工業株式会社 受光素子およびその製造方法
JP6593140B2 (ja) * 2015-12-09 2019-10-23 住友電気工業株式会社 フォトダイオード
KR101959141B1 (ko) * 2017-11-30 2019-03-15 주식회사 우리로 애벌란치 포토 다이오드
US10361243B2 (en) 2017-12-15 2019-07-23 Atomera Incorporated Method for making CMOS image sensor including superlattice to enhance infrared light absorption
US10355151B2 (en) 2017-12-15 2019-07-16 Atomera Incorporated CMOS image sensor including photodiodes with overlying superlattices to reduce crosstalk
US10276625B1 (en) * 2017-12-15 2019-04-30 Atomera Incorporated CMOS image sensor including superlattice to enhance infrared light absorption
US10461118B2 (en) 2017-12-15 2019-10-29 Atomera Incorporated Method for making CMOS image sensor including photodiodes with overlying superlattices to reduce crosstalk
US10396223B2 (en) 2017-12-15 2019-08-27 Atomera Incorporated Method for making CMOS image sensor with buried superlattice layer to reduce crosstalk
US10304881B1 (en) 2017-12-15 2019-05-28 Atomera Incorporated CMOS image sensor with buried superlattice layer to reduce crosstalk
US11056604B1 (en) * 2020-02-18 2021-07-06 National Central University Photodiode of avalanche breakdown having mixed composite charge layer

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5861679A (ja) * 1981-10-07 1983-04-12 Kokusai Denshin Denwa Co Ltd <Kdd> 量子井戸層付アバランシ・ホトダイオ−ド
JPS6016474A (ja) * 1983-07-08 1985-01-28 Nec Corp ヘテロ多重接合型光検出器
FR2618221B1 (fr) * 1987-07-17 1991-07-19 Thomson Csf Detecteur d'onde electromagnetique et analyseur d'image comportant un tel detecteur.
JPH01144687A (ja) * 1987-11-30 1989-06-06 Nec Corp 半導体受光素子
JPH01194476A (ja) * 1988-01-29 1989-08-04 Nec Corp 半導体受光素子
JPH0210780A (ja) * 1988-06-28 1990-01-16 Nec Corp 半導体受光素子
JPH0282658A (ja) * 1988-09-20 1990-03-23 Fujitsu Ltd 半導体受光素子
JP2747299B2 (ja) * 1988-09-28 1998-05-06 株式会社日立製作所 半導体受光素子
JP2664960B2 (ja) * 1988-10-28 1997-10-22 日本電信電話株式会社 アバランシェフォトダイオード
JPH02119274A (ja) * 1988-10-28 1990-05-07 Fujitsu Ltd アバランシェフォトダイオード
JPH0821727B2 (ja) * 1988-11-18 1996-03-04 日本電気株式会社 アバランシェフォトダイオード
JPH02246381A (ja) * 1989-03-20 1990-10-02 Fujitsu Ltd 超格子アバランシェホトダイオード
JPH02254769A (ja) * 1989-03-29 1990-10-15 Fujitsu Ltd 半導体受光素子
JPH08111541A (ja) * 1989-12-08 1996-04-30 Hitachi Ltd 半導体装置

Also Published As

Publication number Publication date
US5187553A (en) 1993-02-16
JP2937404B2 (ja) 1999-08-23
EP0452927B1 (de) 1999-07-07
DE69131410D1 (de) 1999-08-12
JPH042176A (ja) 1992-01-07
EP0452927A1 (de) 1991-10-23
CA2040767A1 (en) 1991-10-19

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee