DE69218157T2 - Lawinenfotodiode - Google Patents

Lawinenfotodiode

Info

Publication number
DE69218157T2
DE69218157T2 DE69218157T DE69218157T DE69218157T2 DE 69218157 T2 DE69218157 T2 DE 69218157T2 DE 69218157 T DE69218157 T DE 69218157T DE 69218157 T DE69218157 T DE 69218157T DE 69218157 T2 DE69218157 T2 DE 69218157T2
Authority
DE
Germany
Prior art keywords
photo diode
avalanche photo
avalanche
diode
photo
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69218157T
Other languages
English (en)
Other versions
DE69218157D1 (de
Inventor
Isao Watanabe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Publication of DE69218157D1 publication Critical patent/DE69218157D1/de
Application granted granted Critical
Publication of DE69218157T2 publication Critical patent/DE69218157T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
    • H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier working in avalanche mode, e.g. avalanche photodiode
    • H01L31/1075—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier working in avalanche mode, e.g. avalanche photodiode in which the active layers, e.g. absorption or multiplication layers, form an heterostructure, e.g. SAM structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035236—Superlattices; Multiple quantum well structures
DE69218157T 1991-12-20 1992-12-21 Lawinenfotodiode Expired - Lifetime DE69218157T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3338651A JP2998375B2 (ja) 1991-12-20 1991-12-20 アバランシェフォトダイオード

Publications (2)

Publication Number Publication Date
DE69218157D1 DE69218157D1 (de) 1997-04-17
DE69218157T2 true DE69218157T2 (de) 1998-02-05

Family

ID=18320183

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69218157T Expired - Lifetime DE69218157T2 (de) 1991-12-20 1992-12-21 Lawinenfotodiode

Country Status (4)

Country Link
US (1) US5338947A (de)
EP (1) EP0549292B1 (de)
JP (1) JP2998375B2 (de)
DE (1) DE69218157T2 (de)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3318391B2 (ja) * 1993-06-14 2002-08-26 ローム株式会社 半導体発光装置
JPH07115184A (ja) * 1993-08-24 1995-05-02 Canon Inc 積層型固体撮像装置及びその製造方法
JP2762939B2 (ja) * 1994-03-22 1998-06-11 日本電気株式会社 超格子アバランシェフォトダイオード
JP2601231B2 (ja) * 1994-12-22 1997-04-16 日本電気株式会社 超格子アバランシェフォトダイオード
US5771256A (en) * 1996-06-03 1998-06-23 Bell Communications Research, Inc. InP-based lasers with reduced blue shifts
US5831322A (en) * 1997-06-25 1998-11-03 Advanced Photonix, Inc. Active large area avalanche photodiode array
US5757057A (en) * 1997-06-25 1998-05-26 Advanced Photonix, Inc. Large area avalanche photodiode array
JP2001332759A (ja) 2000-03-16 2001-11-30 Matsushita Electric Ind Co Ltd アバランシェフォトダイオード
US7045833B2 (en) * 2000-09-29 2006-05-16 Board Of Regents, The University Of Texas System Avalanche photodiodes with an impact-ionization-engineered multiplication region
JP2003168818A (ja) * 2001-09-18 2003-06-13 Anritsu Corp 順メサ型アバランシェフォトダイオード及びその製造方法
US6720588B2 (en) * 2001-11-28 2004-04-13 Optonics, Inc. Avalanche photodiode for photon counting applications and method thereof
US8239176B2 (en) * 2008-02-13 2012-08-07 Feng Ma Simulation methods and systems for carriers having multiplications
US10381502B2 (en) * 2015-09-09 2019-08-13 Teledyne Scientific & Imaging, Llc Multicolor imaging device using avalanche photodiode
JP6776888B2 (ja) * 2016-12-26 2020-10-28 住友電気工業株式会社 光スイッチ及び光スイッチ装置
WO2020013815A1 (en) * 2018-07-11 2020-01-16 Sri International Linear mode avalanche photodiodes without excess noise
CN109148623B (zh) * 2018-08-20 2020-06-26 中国科学院上海技术物理研究所 一种具有低噪声的AlGaN基雪崩光电二极管及制备方法
CN110690314B (zh) * 2019-09-05 2023-06-27 中国电子科技集团公司第十三研究所 吸收层与倍增层为分离结构的紫外探测器及其制备方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03227074A (ja) * 1990-01-31 1991-10-08 Nec Corp 半導体光検出器
JP2937404B2 (ja) * 1990-04-18 1999-08-23 日本電気株式会社 半導体受光素子
US5204539A (en) * 1991-01-28 1993-04-20 Nec Corporation Avalanche photodiode with hetero-periodical structure

Also Published As

Publication number Publication date
DE69218157D1 (de) 1997-04-17
JP2998375B2 (ja) 2000-01-11
EP0549292A1 (de) 1993-06-30
US5338947A (en) 1994-08-16
JPH05211344A (ja) 1993-08-20
EP0549292B1 (de) 1997-03-12

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Legal Events

Date Code Title Description
8332 No legal effect for de
8370 Indication related to discontinuation of the patent is to be deleted
8364 No opposition during term of opposition
R071 Expiry of right

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