DE69324119T2 - Diodenstruktur mit PN-Übergang - Google Patents

Diodenstruktur mit PN-Übergang

Info

Publication number
DE69324119T2
DE69324119T2 DE69324119T DE69324119T DE69324119T2 DE 69324119 T2 DE69324119 T2 DE 69324119T2 DE 69324119 T DE69324119 T DE 69324119T DE 69324119 T DE69324119 T DE 69324119T DE 69324119 T2 DE69324119 T2 DE 69324119T2
Authority
DE
Germany
Prior art keywords
junction
diode structure
diode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69324119T
Other languages
English (en)
Other versions
DE69324119D1 (de
Inventor
Viren C Patel
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics lnc USA
Original Assignee
STMicroelectronics lnc USA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics lnc USA filed Critical STMicroelectronics lnc USA
Application granted granted Critical
Publication of DE69324119D1 publication Critical patent/DE69324119D1/de
Publication of DE69324119T2 publication Critical patent/DE69324119T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
    • H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
    • H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
    • H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1004—Base region of bipolar transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)
DE69324119T 1992-12-21 1993-12-20 Diodenstruktur mit PN-Übergang Expired - Fee Related DE69324119T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US99435692A 1992-12-21 1992-12-21

Publications (2)

Publication Number Publication Date
DE69324119D1 DE69324119D1 (de) 1999-04-29
DE69324119T2 true DE69324119T2 (de) 1999-08-05

Family

ID=25540572

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69324119T Expired - Fee Related DE69324119T2 (de) 1992-12-21 1993-12-20 Diodenstruktur mit PN-Übergang

Country Status (4)

Country Link
US (1) US5543655A (de)
EP (1) EP0604163B1 (de)
JP (1) JPH06283542A (de)
DE (1) DE69324119T2 (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6040617A (en) * 1992-12-22 2000-03-21 Stmicroelectronics, Inc. Structure to provide junction breakdown stability for deep trench devices
US5548158A (en) * 1994-09-02 1996-08-20 National Semiconductor Corporation Structure of bipolar transistors with improved output current-voltage characteristics
KR19980055023A (ko) * 1996-12-27 1998-09-25 김광호 필드영역에 트렌치를 가지는 모스트랜지스터
US6212435B1 (en) * 1998-11-13 2001-04-03 Respironics, Inc. Intraoral electromuscular stimulation device and method

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2173729B1 (de) * 1972-02-29 1977-07-15 Radiotechnique Compelec
JPS5062778A (de) * 1973-10-03 1975-05-28
US4165516A (en) * 1975-04-28 1979-08-21 U.S. Philips Corporation Semiconductor device and method of manufacturing same
JPS5346285A (en) * 1976-10-08 1978-04-25 Hitachi Ltd Mesa type high breakdown voltage semiconductor device
DE2930460C2 (de) * 1979-07-27 1986-07-17 Telefunken electronic GmbH, 7100 Heilbronn Verfahren zum Herstellen hochspannungsfester Mesadioden
JPS5630756A (en) * 1979-08-22 1981-03-27 Nec Corp Semiconductor device
FR2557367B1 (fr) * 1983-12-23 1986-12-05 Thomson Csf Structure semiconductrice a tenue en tension elevee avec sillon peripherique implante et son procede de fabrication
IT1202311B (it) * 1985-12-11 1989-02-02 Sgs Microelettronica Spa Dispositivo a semiconduttore con una giunzione piana a terminazione auto passivante
GB2207803A (en) * 1987-07-27 1989-02-08 Philips Electronic Associated Junction breakdown prevention
JPH0756869B2 (ja) * 1988-03-03 1995-06-14 株式会社東芝 半導体装置
DE4119904A1 (de) * 1991-06-17 1992-12-24 Telefunken Electronic Gmbh Halbleiteranordnung

Also Published As

Publication number Publication date
EP0604163B1 (de) 1999-03-24
US5543655A (en) 1996-08-06
JPH06283542A (ja) 1994-10-07
EP0604163A2 (de) 1994-06-29
DE69324119D1 (de) 1999-04-29
EP0604163A3 (de) 1994-12-28

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee