DE69412327D1 - Monolithisches Diodengitter - Google Patents

Monolithisches Diodengitter

Info

Publication number
DE69412327D1
DE69412327D1 DE69412327T DE69412327T DE69412327D1 DE 69412327 D1 DE69412327 D1 DE 69412327D1 DE 69412327 T DE69412327 T DE 69412327T DE 69412327 T DE69412327 T DE 69412327T DE 69412327 D1 DE69412327 D1 DE 69412327D1
Authority
DE
Germany
Prior art keywords
diode grid
monolithic diode
monolithic
grid
diode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69412327T
Other languages
English (en)
Other versions
DE69412327T2 (de
Inventor
Robert Pezzani
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SA
Original Assignee
SGS Thomson Microelectronics SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SGS Thomson Microelectronics SA filed Critical SGS Thomson Microelectronics SA
Application granted granted Critical
Publication of DE69412327D1 publication Critical patent/DE69412327D1/de
Publication of DE69412327T2 publication Critical patent/DE69412327T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/528—Geometry or layout of the interconnection structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/0814—Diodes only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/102—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including bipolar components
    • H01L27/1021—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including bipolar components including diodes only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Geometry (AREA)
  • Semiconductor Integrated Circuits (AREA)
DE69412327T 1993-04-13 1994-04-11 Monolithisches Diodengitter Expired - Fee Related DE69412327T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9304586A FR2704094B1 (fr) 1993-04-13 1993-04-13 Réseau de diodes monolithique.

Publications (2)

Publication Number Publication Date
DE69412327D1 true DE69412327D1 (de) 1998-09-17
DE69412327T2 DE69412327T2 (de) 1998-12-24

Family

ID=9446200

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69412327T Expired - Fee Related DE69412327T2 (de) 1993-04-13 1994-04-11 Monolithisches Diodengitter

Country Status (5)

Country Link
US (2) US5559361A (de)
EP (1) EP0620596B1 (de)
JP (1) JP3785644B2 (de)
DE (1) DE69412327T2 (de)
FR (1) FR2704094B1 (de)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5872386A (en) * 1995-07-17 1999-02-16 Sii R&D Center Inc. Wafer layout of semiconductor device
FR2779292B1 (fr) * 1998-05-27 2000-09-29 Sgs Thomson Microelectronics Association de diodes en serie
JP2002289879A (ja) 2001-03-27 2002-10-04 Toshiba Corp ダイオード
US7442629B2 (en) 2004-09-24 2008-10-28 President & Fellows Of Harvard College Femtosecond laser-induced formation of submicrometer spikes on a semiconductor substrate
US7057256B2 (en) 2001-05-25 2006-06-06 President & Fellows Of Harvard College Silicon-based visible and near-infrared optoelectric devices
US6797992B2 (en) * 2001-08-07 2004-09-28 Fabtech, Inc. Apparatus and method for fabricating a high reverse voltage semiconductor device
US20050269695A1 (en) * 2004-06-07 2005-12-08 Brogle James J Surface-mount chip-scale package
US8212327B2 (en) * 2008-03-06 2012-07-03 Sionyx, Inc. High fill-factor laser-treated semiconductor device on bulk material with single side contact scheme
JP2010098189A (ja) * 2008-10-17 2010-04-30 Toshiba Corp 半導体装置
US9673243B2 (en) 2009-09-17 2017-06-06 Sionyx, Llc Photosensitive imaging devices and associated methods
US9911781B2 (en) 2009-09-17 2018-03-06 Sionyx, Llc Photosensitive imaging devices and associated methods
US8692198B2 (en) 2010-04-21 2014-04-08 Sionyx, Inc. Photosensitive imaging devices and associated methods
EP2583312A2 (de) 2010-06-18 2013-04-24 Sionyx, Inc. Lichtempfindliche hochgeschwindigkeitsvorrichtungen und verfahren dafür
US9496308B2 (en) 2011-06-09 2016-11-15 Sionyx, Llc Process module for increasing the response of backside illuminated photosensitive imagers and associated methods
US20130016203A1 (en) 2011-07-13 2013-01-17 Saylor Stephen D Biometric imaging devices and associated methods
US9064764B2 (en) 2012-03-22 2015-06-23 Sionyx, Inc. Pixel isolation elements, devices, and associated methods
JP6466346B2 (ja) 2013-02-15 2019-02-06 サイオニクス、エルエルシー アンチブルーミング特性を有するハイダイナミックレンジｃｍｏｓ画像センサおよび関連づけられた方法
US9939251B2 (en) 2013-03-15 2018-04-10 Sionyx, Llc Three dimensional imaging utilizing stacked imager devices and associated methods
WO2014209421A1 (en) 2013-06-29 2014-12-31 Sionyx, Inc. Shallow trench textured regions and associated methods

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1108778A (en) * 1965-09-13 1968-04-03 Associated Semiconductor Mft Improvements in and relating to methods of manufacturing semiconductor devices
US3913216A (en) * 1973-06-20 1975-10-21 Signetics Corp Method for fabricating a precision aligned semiconductor array
DE3435751A1 (de) * 1984-09-28 1986-04-10 Siemens AG, 1000 Berlin und 8000 München Integrierte halbleiterschaltung in komplementaerer schaltungstechnik mit ueberspannungsschutz-struktur
FR2623663B1 (fr) * 1987-11-24 1990-04-13 Sgs Thomson Microelectronics Assemblage monolithique de diodes de protection et systemes de protection
JP2513010B2 (ja) * 1988-12-27 1996-07-03 日本電気株式会社 半導体集積回路の入力保護装置
US5278101A (en) * 1989-06-28 1994-01-11 Kabushiki Kaisha Toshiba Semiconductor device and method for manufacturing the same
JPH03124056A (ja) * 1989-10-06 1991-05-27 Fujitsu Ltd 保護素子
FR2687009B1 (fr) * 1992-01-31 1994-04-29 Sgs Thomson Microelectronics Composant de protection pour circuit automobile.
FR2689317B1 (fr) * 1992-03-26 1994-06-17 Sgs Thomson Microelectronics Circuit integre constituant un reseau de diodes de protection.

Also Published As

Publication number Publication date
EP0620596B1 (de) 1998-08-12
FR2704094A1 (fr) 1994-10-21
US5559361A (en) 1996-09-24
JP3785644B2 (ja) 2006-06-14
DE69412327T2 (de) 1998-12-24
FR2704094B1 (fr) 1995-07-07
JPH0799327A (ja) 1995-04-11
US5631181A (en) 1997-05-20
EP0620596A1 (de) 1994-10-19

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee