DE69321822D1 - Photodiodenstruktur - Google Patents

Photodiodenstruktur

Info

Publication number
DE69321822D1
DE69321822D1 DE69321822T DE69321822T DE69321822D1 DE 69321822 D1 DE69321822 D1 DE 69321822D1 DE 69321822 T DE69321822 T DE 69321822T DE 69321822 T DE69321822 T DE 69321822T DE 69321822 D1 DE69321822 D1 DE 69321822D1
Authority
DE
Germany
Prior art keywords
photodiode structure
photodiode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69321822T
Other languages
English (en)
Other versions
DE69321822T2 (de
Inventor
Uwe Effelsberg
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Agilent Technologies Deutschland GmbH
Original Assignee
Hewlett Packard GmbH Germany
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hewlett Packard GmbH Germany filed Critical Hewlett Packard GmbH Germany
Application granted granted Critical
Publication of DE69321822D1 publication Critical patent/DE69321822D1/de
Publication of DE69321822T2 publication Critical patent/DE69321822T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
    • H01L31/103—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PN homojunction type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Light Receiving Elements (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
DE69321822T 1993-05-19 1993-05-19 Photodiodenstruktur Expired - Fee Related DE69321822T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP93108156A EP0625803B1 (de) 1993-05-19 1993-05-19 Photodiodenstruktur

Publications (2)

Publication Number Publication Date
DE69321822D1 true DE69321822D1 (de) 1998-12-03
DE69321822T2 DE69321822T2 (de) 1999-04-01

Family

ID=8212920

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69321822T Expired - Fee Related DE69321822T2 (de) 1993-05-19 1993-05-19 Photodiodenstruktur

Country Status (4)

Country Link
US (1) US5430321A (de)
EP (1) EP0625803B1 (de)
JP (1) JP3614184B2 (de)
DE (1) DE69321822T2 (de)

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JP2576766B2 (ja) * 1993-07-08 1997-01-29 日本電気株式会社 半導体基板の製造方法
JPH1126741A (ja) * 1997-07-04 1999-01-29 Toshiba Corp 固体撮像装置
US6023081A (en) * 1997-11-14 2000-02-08 Motorola, Inc. Semiconductor image sensor
US6133615A (en) * 1998-04-13 2000-10-17 Wisconsin Alumni Research Foundation Photodiode arrays having minimized cross-talk between diodes
US6157019A (en) * 1999-03-31 2000-12-05 Xerox Corporation Edge photosite definition by opaque filter layer
US6287886B1 (en) * 1999-08-23 2001-09-11 United Microelectronics Corp. Method of forming a CMOS image sensor
US6747638B2 (en) * 2000-01-31 2004-06-08 Semiconductor Energy Laboratory Co., Ltd. Adhesion type area sensor and display device having adhesion type area sensor
US6369426B2 (en) 2000-04-27 2002-04-09 Infineon Technologies North America Corp. Transistor with integrated photodetector for conductivity modulation
US6316284B1 (en) * 2000-09-07 2001-11-13 Xerox Corporation Infrared correction in color scanners
US6828642B2 (en) * 2001-04-17 2004-12-07 Lockhead Martin Corporation Diffraction grating coupled infrared photodetector
JP4123415B2 (ja) * 2002-05-20 2008-07-23 ソニー株式会社 固体撮像装置
DE10229463B4 (de) * 2002-07-01 2008-12-11 Qimonda Ag Halbleiteranordnung und Verfahren zu ihrer Herstellung
US7709921B2 (en) 2008-08-27 2010-05-04 Udt Sensors, Inc. Photodiode and photodiode array with improved performance characteristics
US7256470B2 (en) * 2005-03-16 2007-08-14 Udt Sensors, Inc. Photodiode with controlled current leakage
US8519503B2 (en) 2006-06-05 2013-08-27 Osi Optoelectronics, Inc. High speed backside illuminated, front side contact photodiode array
US8035183B2 (en) * 2003-05-05 2011-10-11 Udt Sensors, Inc. Photodiodes with PN junction on both front and back sides
US7656001B2 (en) * 2006-11-01 2010-02-02 Udt Sensors, Inc. Front-side illuminated, back-side contact double-sided PN-junction photodiode arrays
US7279731B1 (en) * 2006-05-15 2007-10-09 Udt Sensors, Inc. Edge illuminated photodiodes
US7057254B2 (en) * 2003-05-05 2006-06-06 Udt Sensors, Inc. Front illuminated back side contact thin wafer detectors
US7576369B2 (en) * 2005-10-25 2009-08-18 Udt Sensors, Inc. Deep diffused thin photodiodes
US7880258B2 (en) * 2003-05-05 2011-02-01 Udt Sensors, Inc. Thin wafer detectors with improved radiation damage and crosstalk characteristics
US7655999B2 (en) 2006-09-15 2010-02-02 Udt Sensors, Inc. High density photodiodes
US8164151B2 (en) * 2007-05-07 2012-04-24 Osi Optoelectronics, Inc. Thin active layer fishbone photodiode and method of manufacturing the same
US8120023B2 (en) 2006-06-05 2012-02-21 Udt Sensors, Inc. Low crosstalk, front-side illuminated, back-side contact photodiode array
US8686529B2 (en) 2010-01-19 2014-04-01 Osi Optoelectronics, Inc. Wavelength sensitive sensor photodiodes
US7242069B2 (en) 2003-05-05 2007-07-10 Udt Sensors, Inc. Thin wafer detectors with improved radiation damage and crosstalk characteristics
US7148528B2 (en) * 2003-07-02 2006-12-12 Micron Technology, Inc. Pinned photodiode structure and method of formation
US9178092B2 (en) 2006-11-01 2015-11-03 Osi Optoelectronics, Inc. Front-side illuminated, back-side contact double-sided PN-junction photodiode arrays
US20100053802A1 (en) * 2008-08-27 2010-03-04 Masaki Yamashita Low Power Disk-Drive Motor Driver
WO2010031011A2 (en) 2008-09-15 2010-03-18 Udt Sensors, Inc. Thin active layer fishbone photodiode with a shallow n+ layer and method of manufacturing the same
US8399909B2 (en) 2009-05-12 2013-03-19 Osi Optoelectronics, Inc. Tetra-lateral position sensing detector
TWI496042B (zh) * 2009-07-02 2015-08-11 Semiconductor Energy Lab 觸控面板及其驅動方法
US8916873B2 (en) 2011-09-14 2014-12-23 Infineon Technologies Ag Photodetector with controllable spectral response
US8975715B2 (en) 2011-09-14 2015-03-10 Infineon Technologies Ag Photodetector and method for manufacturing the same
DE102013018789A1 (de) 2012-11-29 2014-06-05 Infineon Technologies Ag Steuern lichterzeugter Ladungsträger
US8912615B2 (en) 2013-01-24 2014-12-16 Osi Optoelectronics, Inc. Shallow junction photodiode for detecting short wavelength light
JP6090060B2 (ja) * 2013-08-23 2017-03-08 株式会社豊田中央研究所 シングルフォトンアバランシェダイオード
JP2018026536A (ja) * 2016-08-09 2018-02-15 エスアイアイ・セミコンダクタ株式会社 半導体装置の製造方法
JP2017005276A (ja) * 2016-09-30 2017-01-05 株式会社豊田中央研究所 シングルフォトンアバランシェダイオード
GB2600954B (en) * 2020-11-12 2023-06-28 X Fab Global Services Gmbh Low dark count rate semiconductor structures
CN114784131B (zh) * 2022-04-11 2023-05-16 西安微电子技术研究所 一种光敏二极管、一种光敏运放电路及一种光敏芯片

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50126188A (de) * 1974-03-22 1975-10-03
FR2363197A1 (fr) * 1976-08-23 1978-03-24 Ibm Structure de photo-diode amelioree donnant une reponse en couleur bleue renforcee
JPS553633A (en) * 1978-06-20 1980-01-11 Sharp Corp Manufacturing semiconductor device
JPS5582472A (en) * 1978-12-13 1980-06-21 Ibm Silicone solar energy converter
JPS63102380A (ja) * 1986-10-20 1988-05-07 Fujitsu Ltd 光センサ
DE3876869D1 (de) * 1987-06-22 1993-02-04 Landis & Gyr Betriebs Ag Photodetektor fuer ultraviolett und verfahren zur herstellung.
US5243215A (en) * 1990-05-31 1993-09-07 Fuji Electric Co., Ltd. Semiconductor photodiode device with reduced junction area
JPH0491473A (ja) * 1990-08-02 1992-03-24 Canon Inc 光電変換装置

Also Published As

Publication number Publication date
EP0625803A1 (de) 1994-11-23
DE69321822T2 (de) 1999-04-01
EP0625803B1 (de) 1998-10-28
JPH0715028A (ja) 1995-01-17
US5430321A (en) 1995-07-04
JP3614184B2 (ja) 2005-01-26

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: AGILENT TECHNOLOGIES DEUTSCHLAND GMBH, 71034 BOEBL

8339 Ceased/non-payment of the annual fee