DE69519983D1 - Metall-Semiconductor-Metall-Photodetektoren - Google Patents
Metall-Semiconductor-Metall-PhotodetektorenInfo
- Publication number
- DE69519983D1 DE69519983D1 DE69519983T DE69519983T DE69519983D1 DE 69519983 D1 DE69519983 D1 DE 69519983D1 DE 69519983 T DE69519983 T DE 69519983T DE 69519983 T DE69519983 T DE 69519983T DE 69519983 D1 DE69519983 D1 DE 69519983D1
- Authority
- DE
- Germany
- Prior art keywords
- metal
- photodetectors
- semiconductor
- metal semiconductor
- semiconductor metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000002184 metal Substances 0.000 title 2
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/108—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the Schottky type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/108—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the Schottky type
- H01L31/1085—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the Schottky type the devices being of the Metal-Semiconductor-Metal [MSM] Schottky barrier type
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Light Receiving Elements (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/371,247 US5631490A (en) | 1995-01-11 | 1995-01-11 | Metal semiconductor metal photodetectors |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69519983D1 true DE69519983D1 (de) | 2001-03-01 |
DE69519983T2 DE69519983T2 (de) | 2001-06-28 |
Family
ID=23463148
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69519983T Expired - Fee Related DE69519983T2 (de) | 1995-01-11 | 1995-12-12 | Metall-Semiconductor-Metall-Photodetektoren |
Country Status (7)
Country | Link |
---|---|
US (1) | US5631490A (de) |
EP (1) | EP0722191B1 (de) |
JP (1) | JP3200002B2 (de) |
KR (1) | KR100386905B1 (de) |
CA (1) | CA2161161C (de) |
DE (1) | DE69519983T2 (de) |
HK (1) | HK1003096A1 (de) |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5799030A (en) * | 1996-07-26 | 1998-08-25 | Honeywell Inc. | Semiconductor device with a laser and a photodetector in a common container |
US5990490A (en) * | 1998-06-29 | 1999-11-23 | Miracle Technology Co., Ltd. | Optical electronic IC capable of photo detection |
FR2803950B1 (fr) * | 2000-01-14 | 2002-03-01 | Centre Nat Rech Scient | Dispositif de photodetection a microresonateur metal- semiconducteur vertical et procede de fabrication de ce dispositif |
US6362054B1 (en) | 2000-03-13 | 2002-03-26 | Agere Systems Guardian Corp. | Method for fabricating MOS device with halo implanted region |
US6528827B2 (en) * | 2000-11-10 | 2003-03-04 | Optolynx, Inc. | MSM device and method of manufacturing same |
DE10239642B3 (de) * | 2002-08-29 | 2004-06-24 | X-Fab Semiconductor Foundries Ag | Anordnung und Prozeßfolge zur Minimierung von Lichtverlusten und zur elektronischen Abschirmung an integrierten Fotodioden |
DE10239643B3 (de) * | 2002-08-29 | 2004-06-17 | X-Fab Semiconductor Foundries Ag | Verfahren zur Passivierung von CMOS- oder BiCMOS-IC's mit integrierten fotoempfindlichen Strukturen |
US6903432B2 (en) * | 2003-02-13 | 2005-06-07 | Intel Corporation | Photosensitive device |
US8053853B2 (en) * | 2006-05-03 | 2011-11-08 | Taiwan Semiconductor Manufacturing Company, Ltd. | Color filter-embedded MSM image sensor |
US7952106B2 (en) * | 2009-04-10 | 2011-05-31 | Everlight Electronics Co., Ltd. | Light emitting diode device having uniform current distribution and method for forming the same |
CN101969080A (zh) * | 2010-08-10 | 2011-02-09 | 电子科技大学 | 一种黑硅msm结构光电探测器及其制备方法 |
US8829633B2 (en) | 2012-05-03 | 2014-09-09 | The Board Of Trustees Of The Leland Stanford Junior University | Self-aligned semiconductor ridges in metallic slits as a platform for planar tunable nanoscale resonant photodetectors |
US9160452B2 (en) * | 2012-12-29 | 2015-10-13 | Zephyr Photonics Inc. | Apparatus for modular implementation of multi-function active optical cables |
US9520510B2 (en) * | 2013-12-03 | 2016-12-13 | Samsung Display Co., Ltd. | Embedded optical sensors using transverse Fabry-Perot resonator as detectors |
KR101967157B1 (ko) * | 2017-11-06 | 2019-04-09 | 한국원자력연구원 | 전극-반도체간 쇼트키 접촉 구조를 가진 방사선 센서 |
CN109713076A (zh) * | 2019-02-21 | 2019-05-03 | 京东方科技集团股份有限公司 | 平板探测基板及其制备方法、平坦探测器 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5553466A (en) * | 1978-10-16 | 1980-04-18 | Sanyo Electric Co Ltd | Photoelectricity transformer |
US4626322A (en) * | 1983-08-01 | 1986-12-02 | Union Oil Company Of California | Photoelectrochemical preparation of a solid-state semiconductor photonic device |
US4772931A (en) * | 1986-07-08 | 1988-09-20 | Ibm Corporation | Interdigitated Schottky barrier photodetector |
US4807006A (en) * | 1987-06-19 | 1989-02-21 | International Business Machines Corporation | Heterojunction interdigitated schottky barrier photodetector |
US5451769A (en) * | 1994-01-05 | 1995-09-19 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Circular electrode geometry metal-semiconductor-metal photodetectors |
US5461246A (en) * | 1994-05-12 | 1995-10-24 | Regents Of The University Of Minnesota | Photodetector with first and second contacts |
-
1995
- 1995-01-11 US US08/371,247 patent/US5631490A/en not_active Expired - Lifetime
- 1995-10-23 CA CA002161161A patent/CA2161161C/en not_active Expired - Fee Related
- 1995-12-12 DE DE69519983T patent/DE69519983T2/de not_active Expired - Fee Related
- 1995-12-12 EP EP95309019A patent/EP0722191B1/de not_active Expired - Lifetime
-
1996
- 1996-01-10 KR KR1019960000335A patent/KR100386905B1/ko not_active IP Right Cessation
- 1996-01-10 JP JP00232996A patent/JP3200002B2/ja not_active Expired - Lifetime
-
1998
- 1998-03-16 HK HK98102158A patent/HK1003096A1/xx not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
JPH08236802A (ja) | 1996-09-13 |
EP0722191B1 (de) | 2001-01-24 |
CA2161161C (en) | 1999-12-28 |
KR960030450A (ko) | 1996-08-17 |
CA2161161A1 (en) | 1996-07-12 |
HK1003096A1 (en) | 1998-10-09 |
DE69519983T2 (de) | 2001-06-28 |
JP3200002B2 (ja) | 2001-08-20 |
EP0722191A2 (de) | 1996-07-17 |
US5631490A (en) | 1997-05-20 |
KR100386905B1 (ko) | 2003-08-21 |
EP0722191A3 (de) | 1996-12-11 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |