KR970004180A - 반도체 레이저 - Google Patents

반도체 레이저 Download PDF

Info

Publication number
KR970004180A
KR970004180A KR1019950015196A KR19950015196A KR970004180A KR 970004180 A KR970004180 A KR 970004180A KR 1019950015196 A KR1019950015196 A KR 1019950015196A KR 19950015196 A KR19950015196 A KR 19950015196A KR 970004180 A KR970004180 A KR 970004180A
Authority
KR
South Korea
Prior art keywords
semiconductor laser
laser
semiconductor
Prior art date
Application number
KR1019950015196A
Other languages
English (en)
Other versions
KR100335075B1 (ko
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to KR1019950015196A priority Critical patent/KR100335075B1/ko
Publication of KR970004180A publication Critical patent/KR970004180A/ko
Application granted granted Critical
Publication of KR100335075B1 publication Critical patent/KR100335075B1/ko

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/30Structure or shape of the active region; Materials used for the active region
    • H01S5/32Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/327Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIBVI compounds, e.g. ZnCdSe-laser
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/20Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227Buried mesa structure ; Striped active layer

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Led Devices (AREA)
  • Semiconductor Lasers (AREA)
KR1019950015196A 1995-06-09 1995-06-09 반도체레이저 KR100335075B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950015196A KR100335075B1 (ko) 1995-06-09 1995-06-09 반도체레이저

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950015196A KR100335075B1 (ko) 1995-06-09 1995-06-09 반도체레이저

Publications (2)

Publication Number Publication Date
KR970004180A true KR970004180A (ko) 1997-01-29
KR100335075B1 KR100335075B1 (ko) 2002-10-25

Family

ID=37479741

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950015196A KR100335075B1 (ko) 1995-06-09 1995-06-09 반도체레이저

Country Status (1)

Country Link
KR (1) KR100335075B1 (ko)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100493639B1 (ko) * 2002-10-25 2005-06-03 엘지전자 주식회사 화합물 반도체 레이저 다이오드

Also Published As

Publication number Publication date
KR100335075B1 (ko) 2002-10-25

Similar Documents

Publication Publication Date Title
DE69608850T2 (de) Halbleiterlaser
DE69606812D1 (de) Halbleiterlaser
DE69633203D1 (de) Halbleiterlaser-Vorrichtungen
DE69510590D1 (de) Unipolarer Halbleiterlaser
DE69533127D1 (de) Kühlkörper
DE69407455D1 (de) Halbleiterlaser
DE69411364D1 (de) Halbleiterlaser
DE69801974T2 (de) Halbleiterlaser
DE69603015T2 (de) Laser
DE69630748D1 (de) Halbleiterlasermodul
DE69500600D1 (de) Halbleiterlaservorrichtung
DE69605245T2 (de) Laser
DE69617254T2 (de) Laservorrichtung
DE69500371D1 (de) Multi-Quantumwell-Halbleiterlaser
DE69725783D1 (de) Halbleiterlaser
DE69521719D1 (de) Halbleiter-laserelement
DE69624209D1 (de) Halbleiterlaserquelle
DE69728503D1 (de) Halbleiterlaser
DE69517044T2 (de) Halbleiterlaservorrichtung
DE69519719D1 (de) Laservorrichtung
DE69630568D1 (de) Halbleiterlaser-Modul
DE69407374T2 (de) Halbleiterlaser
DE69614169T2 (de) Laserdrucker
DE69700830D1 (de) Halbleiterlaser
DE69726412D1 (de) Halbleiterlaser

Legal Events

Date Code Title Description
A201 Request for examination
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20070329

Year of fee payment: 6

LAPS Lapse due to unpaid annual fee