DE69624209D1 - Halbleiterlaserquelle - Google Patents

Halbleiterlaserquelle

Info

Publication number
DE69624209D1
DE69624209D1 DE69624209T DE69624209T DE69624209D1 DE 69624209 D1 DE69624209 D1 DE 69624209D1 DE 69624209 T DE69624209 T DE 69624209T DE 69624209 T DE69624209 T DE 69624209T DE 69624209 D1 DE69624209 D1 DE 69624209D1
Authority
DE
Germany
Prior art keywords
semiconductor laser
laser source
source
semiconductor
laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69624209T
Other languages
English (en)
Other versions
DE69624209T2 (de
Inventor
Jean Duchemin
Eugene Leliard
Eric Brousse
Thierry Fillardet
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thales SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thales SA filed Critical Thales SA
Application granted granted Critical
Publication of DE69624209D1 publication Critical patent/DE69624209D1/de
Publication of DE69624209T2 publication Critical patent/DE69624209T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0235—Method for mounting laser chips
    • H01S5/02355—Fixing laser chips on mounts
    • H01S5/02365—Fixing laser chips on mounts by clamping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/09—Processes or apparatus for excitation, e.g. pumping
    • H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
    • H01S3/094—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
    • H01S3/0941—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a laser diode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
DE69624209T 1995-07-13 1996-07-05 Halbleiterlaserquelle Expired - Fee Related DE69624209T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR9508507A FR2736764B1 (fr) 1995-07-13 1995-07-13 Source laser a semiconducteurs
PCT/FR1996/001052 WO1997003487A1 (fr) 1995-07-13 1996-07-05 Source laser a semiconducteurs

Publications (2)

Publication Number Publication Date
DE69624209D1 true DE69624209D1 (de) 2002-11-14
DE69624209T2 DE69624209T2 (de) 2003-07-10

Family

ID=9480975

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69624209T Expired - Fee Related DE69624209T2 (de) 1995-07-13 1996-07-05 Halbleiterlaserquelle

Country Status (6)

Country Link
US (1) US5978396A (de)
EP (1) EP0781463B1 (de)
JP (1) JP3869467B2 (de)
DE (1) DE69624209T2 (de)
FR (1) FR2736764B1 (de)
WO (1) WO1997003487A1 (de)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6295307B1 (en) * 1997-10-14 2001-09-25 Decade Products, Inc. Laser diode assembly
FR2793953B1 (fr) 1999-05-21 2002-08-09 Thomson Csf Capacite thermique pour composant electronique fonctionnant en impulsions longues
ES2191559B1 (es) 2002-02-18 2005-02-01 Monocrom, S.L. Modulo laser.
JP4037815B2 (ja) 2003-09-29 2008-01-23 オムロンレーザーフロント株式会社 レーザダイオードモジュール、レーザ装置、及びレーザ加工装置
JP2007512690A (ja) * 2003-11-28 2007-05-17 オスラム　オプト　セミコンダクターズ　ゲゼルシャフト　ミット　ベシュレンクテル　ハフツング ヒートシンクを備えた発光光電素子
JP4600733B2 (ja) * 2004-07-12 2010-12-15 ソニー株式会社 半導体レーザ装置およびその製造方法
DE502008002625D1 (de) * 2008-09-01 2011-03-31 Iie Ges Fuer Innovative Industrieelektronik Mbh Laserdioden-Anordnung
DE102008049084A1 (de) * 2008-09-26 2010-04-08 Jenoptik Laserdiode Gmbh Wärmeableitmodul
DE102009026413A1 (de) * 2009-05-22 2010-11-25 Robert Bosch Gmbh Halbleiterlasermodul und Herstellungsverfahren hierfür
DE102011009018A1 (de) 2011-01-20 2012-08-09 Betewis GmbH Klemmtechnik für horizontale Montage von Laser-Dioden-Barren
US8518814B2 (en) 2011-12-02 2013-08-27 Northrop Grumman Systems Corporation Methods of fabrication of high-density laser diode stacks
DE102014018821B4 (de) 2014-12-19 2019-07-25 Jenoptik Optical Systems Gmbh Diodenlaserbefestigung
CN106785921A (zh) * 2016-12-29 2017-05-31 西安炬光科技股份有限公司 一种机械安装的半导体激光器叠阵
CN106785920B (zh) * 2016-12-29 2024-02-13 西安炬光科技股份有限公司 一种机械连接型的半导体激光器叠阵
CN107069434B (zh) * 2017-03-13 2024-05-10 西安炬光科技股份有限公司 一种机械连接的半导体激光器叠阵
CN114586249A (zh) 2019-10-17 2022-06-03 莫诺克龙有限责任公司 激光连接模块
WO2021024046A1 (ru) * 2020-04-16 2021-02-11 Владимир ВАХ Узел прибора терморегуляции полупроводникового лазера

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1096575A (en) * 1965-04-14 1967-12-29 Standard Telephones Cables Ltd A mounting assembly for a semiconductor device
US3835414A (en) * 1972-03-24 1974-09-10 Us Air Force Gallium arsenide array
JPS59165473A (ja) * 1983-03-10 1984-09-18 Nec Corp 半導体発光素子
US4791634A (en) * 1987-09-29 1988-12-13 Spectra-Physics, Inc. Capillary heat pipe cooled diode pumped slab laser
JPH03209896A (ja) * 1990-01-12 1991-09-12 Mitsubishi Electric Corp 半導体レーザ素子用サブマウント

Also Published As

Publication number Publication date
US5978396A (en) 1999-11-02
FR2736764B1 (fr) 1997-08-08
WO1997003487A1 (fr) 1997-01-30
JPH10507318A (ja) 1998-07-14
JP3869467B2 (ja) 2007-01-17
DE69624209T2 (de) 2003-07-10
EP0781463B1 (de) 2002-10-09
FR2736764A1 (fr) 1997-01-17
EP0781463A1 (de) 1997-07-02

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee