FI955395A - Shottky-kynnysjännitediodi - Google Patents
Shottky-kynnysjännitediodi Download PDFInfo
- Publication number
- FI955395A FI955395A FI955395A FI955395A FI955395A FI 955395 A FI955395 A FI 955395A FI 955395 A FI955395 A FI 955395A FI 955395 A FI955395 A FI 955395A FI 955395 A FI955395 A FI 955395A
- Authority
- FI
- Finland
- Prior art keywords
- schottky barrier
- barrier diode
- diode
- schottky
- barrier
- Prior art date
Links
- 230000004888 barrier function Effects 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
- H01L29/0661—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body specially adapted for altering the breakdown voltage by removing semiconductor material at, or in the neighbourhood of, a reverse biased junction, e.g. by bevelling, moat etching, depletion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
- H01L29/407—Recessed field plates, e.g. trench field plates, buried field plates
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6278035A JPH08139341A (ja) | 1994-11-11 | 1994-11-11 | ショットキ−バリアダイオ−ド |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FI955395A0 FI955395A0 (fi) | 1995-11-09 |
| FI955395A true FI955395A (fi) | 1996-05-12 |
Family
ID=17591746
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FI955395A FI955395A (fi) | 1994-11-11 | 1995-11-09 | Shottky-kynnysjännitediodi |
Country Status (4)
| Country | Link |
|---|---|
| EP (1) | EP0712167A3 (fi) |
| JP (1) | JPH08139341A (fi) |
| KR (1) | KR100212203B1 (fi) |
| FI (1) | FI955395A (fi) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0964381A (ja) * | 1995-08-25 | 1997-03-07 | Murata Mfg Co Ltd | ショットキーバリアダイオード |
| KR101072992B1 (ko) | 2004-12-30 | 2011-10-12 | 매그나칩 반도체 유한회사 | 쇼트키 다이오드 및 그 형성 방법 |
| CA2652948A1 (en) * | 2007-03-26 | 2008-10-02 | Sumitomo Electric Industries, Ltd. | Schottky barrier diode and method of producing the same |
| JP2009194225A (ja) * | 2008-02-15 | 2009-08-27 | Sumitomo Electric Ind Ltd | ショットキバリアダイオード、及びショットキバリアダイオードを作製する方法 |
| KR101461886B1 (ko) | 2013-09-10 | 2014-11-13 | 현대자동차 주식회사 | 쇼트키 배리어 다이오드 및 그 제조 방법 |
| KR102099438B1 (ko) * | 2013-10-07 | 2020-04-09 | 엘지이노텍 주식회사 | 반도체 소자 |
| JP6260553B2 (ja) | 2015-02-27 | 2018-01-17 | 豊田合成株式会社 | 半導体装置およびその製造方法 |
| JP6344264B2 (ja) * | 2015-02-27 | 2018-06-20 | 豊田合成株式会社 | 半導体装置およびその製造方法 |
| JP2017139289A (ja) * | 2016-02-02 | 2017-08-10 | トヨタ自動車株式会社 | ダイオード |
| JP2018037585A (ja) | 2016-09-02 | 2018-03-08 | 豊田合成株式会社 | 半導体装置およびその製造方法 |
| CN111129164B (zh) * | 2019-12-05 | 2023-09-26 | 中国电子科技集团公司第十三研究所 | 肖特基二极管及其制备方法 |
| CN111129165B (zh) * | 2019-12-05 | 2023-11-28 | 中国电子科技集团公司第十三研究所 | 肖特基二极管及其制备方法 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55128879A (en) * | 1979-03-27 | 1980-10-06 | Nec Corp | Semiconductor device |
| CA2064146C (en) * | 1991-03-28 | 1997-08-12 | Hisashi Ariyoshi | Schottky barrier diode and a method of manufacturing thereof |
| US5365102A (en) * | 1993-07-06 | 1994-11-15 | North Carolina State University | Schottky barrier rectifier with MOS trench |
-
1994
- 1994-11-11 JP JP6278035A patent/JPH08139341A/ja active Pending
-
1995
- 1995-11-09 EP EP95117710A patent/EP0712167A3/en not_active Withdrawn
- 1995-11-09 FI FI955395A patent/FI955395A/fi unknown
- 1995-11-10 KR KR1019950040795A patent/KR100212203B1/ko not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| EP0712167A2 (en) | 1996-05-15 |
| EP0712167A3 (en) | 1996-07-31 |
| FI955395A0 (fi) | 1995-11-09 |
| KR960019807A (ko) | 1996-06-17 |
| KR100212203B1 (ko) | 1999-08-02 |
| JPH08139341A (ja) | 1996-05-31 |
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