DE69507438T2 - Indexgeführte lichtemittierende halbleiterdiode - Google Patents

Indexgeführte lichtemittierende halbleiterdiode

Info

Publication number
DE69507438T2
DE69507438T2 DE69507438T DE69507438T DE69507438T2 DE 69507438 T2 DE69507438 T2 DE 69507438T2 DE 69507438 T DE69507438 T DE 69507438T DE 69507438 T DE69507438 T DE 69507438T DE 69507438 T2 DE69507438 T2 DE 69507438T2
Authority
DE
Germany
Prior art keywords
index
emitting semiconductor
guided light
semiconductor diode
diode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69507438T
Other languages
English (en)
Other versions
DE69507438D1 (de
Inventor
Marcel Schemmann
Der Poel Carolus Van
Gerard Acket
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Viavi Solutions Inc
Original Assignee
Uniphase Opto Holdings Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Uniphase Opto Holdings Inc filed Critical Uniphase Opto Holdings Inc
Application granted granted Critical
Publication of DE69507438D1 publication Critical patent/DE69507438D1/de
Publication of DE69507438T2 publication Critical patent/DE69507438T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/204—Strongly index guided structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H01S5/2206—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers based on III-V materials
    • H01S5/221—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers based on III-V materials containing aluminium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H01S5/2218—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special optical properties
    • H01S5/222—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special optical properties having a refractive index lower than that of the cladding layers or outer guiding layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3211—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities
    • H01S5/3215—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities graded composition cladding layers

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
DE69507438T 1994-06-20 1995-05-19 Indexgeführte lichtemittierende halbleiterdiode Expired - Fee Related DE69507438T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP94201753 1994-06-20
PCT/IB1995/000384 WO1995035582A2 (en) 1994-06-20 1995-05-19 Radiation-emitting semiconductor index-guided diode

Publications (2)

Publication Number Publication Date
DE69507438D1 DE69507438D1 (de) 1999-03-04
DE69507438T2 true DE69507438T2 (de) 2000-05-25

Family

ID=8216968

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69507438T Expired - Fee Related DE69507438T2 (de) 1994-06-20 1995-05-19 Indexgeführte lichtemittierende halbleiterdiode

Country Status (5)

Country Link
US (1) US5812578A (de)
EP (1) EP0714558B1 (de)
JP (1) JPH09502308A (de)
DE (1) DE69507438T2 (de)
WO (1) WO1995035582A2 (de)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU4557300A (en) 1999-04-27 2000-11-10 Karandashov, Sergey Radiation source
US6577658B1 (en) 1999-09-20 2003-06-10 E20 Corporation, Inc. Method and apparatus for planar index guided vertical cavity surface emitting lasers
AU2003217947A1 (en) 2002-03-08 2003-09-22 Quellan, Inc. High speed analog-to-digital converter using a unique gray code having minimal bit transitions
JP4615179B2 (ja) * 2002-06-27 2011-01-19 古河電気工業株式会社 半導体レーザ装置、半導体レーザモジュールおよび光ファイバ増幅器
AU2003256569A1 (en) 2002-07-15 2004-02-02 Quellan, Inc. Adaptive noise filtering and equalization
US6859481B2 (en) * 2002-07-16 2005-02-22 Applied Optoelectronics, Inc. Optically-pumped multiple-quantum well active region with improved distribution of optical pumping power
AU2003287628A1 (en) 2002-11-12 2004-06-03 Quellan, Inc. High-speed analog-to-digital conversion with improved robustness to timing uncertainty
JP2007502054A (ja) 2003-08-07 2007-02-01 ケラン インコーポレイテッド クロストークキャンセルのための方法とシステム
US7804760B2 (en) 2003-08-07 2010-09-28 Quellan, Inc. Method and system for signal emulation
GB2406968B (en) * 2003-10-11 2006-12-06 Intense Photonics Ltd Control of output beam divergence in a semiconductor waveguide device
EP1687929B1 (de) 2003-11-17 2010-11-10 Quellan, Inc. Verfahren und system zur löschung von antennenstörungen
US7616700B2 (en) 2003-12-22 2009-11-10 Quellan, Inc. Method and system for slicing a communication signal
US7522883B2 (en) 2004-12-14 2009-04-21 Quellan, Inc. Method and system for reducing signal interference
US7725079B2 (en) 2004-12-14 2010-05-25 Quellan, Inc. Method and system for automatic control in an interference cancellation device
WO2007127369A2 (en) 2006-04-26 2007-11-08 Quellan, Inc. Method and system for reducing radiated emissions from a communications channel
US8373152B2 (en) * 2008-03-27 2013-02-12 Lg Innotek Co., Ltd. Light-emitting element and a production method therefor

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4615032A (en) * 1984-07-13 1986-09-30 At&T Bell Laboratories Self-aligned rib-waveguide high power laser
JPS6218082A (ja) * 1985-07-16 1987-01-27 Sharp Corp 半導体レ−ザ素子
US5295148A (en) * 1990-09-12 1994-03-15 Seiko Epson Corporation Surface emission type semiconductor laser
EP0549853B1 (de) * 1991-12-16 1997-02-05 International Business Machines Corporation Abstimmbarer Laser mit gekoppelter Quantumwell-Struktur
JPH05275798A (ja) * 1992-03-25 1993-10-22 Eastman Kodak Japan Kk レーザダイオード
US5276699A (en) * 1992-11-05 1994-01-04 Eastman Kodak Company Depressed-index ridge waveguide laser diode containing a stabilizing region
US5416790A (en) * 1992-11-06 1995-05-16 Sanyo Electric Co., Ltd. Semiconductor laser with a self-sustained pulsation
US5600667A (en) * 1993-04-05 1997-02-04 Matsushita Electric Industrial Co., Ltd. Semiconductor laser device
JPH06314841A (ja) * 1993-04-28 1994-11-08 Mitsubishi Electric Corp 半導体レーザ及びその製造方法
JPH06314854A (ja) * 1993-04-30 1994-11-08 Fujitsu Ltd 面型発光素子とその製造方法
JPH0722696A (ja) * 1993-07-01 1995-01-24 Sanyo Electric Co Ltd 半導体レーザ素子
JPH07115244A (ja) * 1993-10-19 1995-05-02 Toyota Motor Corp 半導体レーザー及びその製造方法

Also Published As

Publication number Publication date
JPH09502308A (ja) 1997-03-04
WO1995035582A3 (en) 1996-02-22
WO1995035582A2 (en) 1995-12-28
US5812578A (en) 1998-09-22
EP0714558B1 (de) 1999-01-20
EP0714558A1 (de) 1996-06-05
DE69507438D1 (de) 1999-03-04

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Legal Events

Date Code Title Description
8327 Change in the person/name/address of the patent owner

Owner name: UNIPHASE OPTO HOLDINGS INC., SAN JOSE, CALIF., US

8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: JDS UNIPHASE CORP., SAN JOSE, CALIF., US

8339 Ceased/non-payment of the annual fee