GB9912940D0 - Light-emitting diode - Google Patents
Light-emitting diodeInfo
- Publication number
- GB9912940D0 GB9912940D0 GBGB9912940.5A GB9912940A GB9912940D0 GB 9912940 D0 GB9912940 D0 GB 9912940D0 GB 9912940 A GB9912940 A GB 9912940A GB 9912940 D0 GB9912940 D0 GB 9912940D0
- Authority
- GB
- United Kingdom
- Prior art keywords
- light
- emitting diode
- diode
- emitting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/12—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
- H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S2301/00—Functional characteristics
- H01S2301/17—Semiconductor lasers comprising special layers
- H01S2301/173—The laser chip comprising special buffer layers, e.g. dislocation prevention or reduction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/3201—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures incorporating bulkstrain effects, e.g. strain compensation, strain related to polarisation
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Led Devices (AREA)
- Semiconductor Lasers (AREA)
- Recrystallisation Techniques (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/092,478 US6194742B1 (en) | 1998-06-05 | 1998-06-05 | Strain engineered and impurity controlled III-V nitride semiconductor films and optoelectronic devices |
Publications (2)
Publication Number | Publication Date |
---|---|
GB9912940D0 true GB9912940D0 (en) | 1999-08-04 |
GB2338109A GB2338109A (en) | 1999-12-08 |
Family
ID=22233422
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB9912940A Withdrawn GB2338109A (en) | 1998-06-05 | 1999-06-03 | Light emitting diode |
Country Status (4)
Country | Link |
---|---|
US (2) | US6194742B1 (en) |
JP (1) | JP4677065B2 (en) |
DE (1) | DE19905516C2 (en) |
GB (1) | GB2338109A (en) |
Families Citing this family (87)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3770014B2 (en) * | 1999-02-09 | 2006-04-26 | 日亜化学工業株式会社 | Nitride semiconductor device |
US6133589A (en) * | 1999-06-08 | 2000-10-17 | Lumileds Lighting, U.S., Llc | AlGaInN-based LED having thick epitaxial layer for improved light extraction |
EP1065734B1 (en) | 1999-06-09 | 2009-05-13 | Kabushiki Kaisha Toshiba | Bonding type semiconductor substrate, semiconductor light emitting element, and preparation process thereof. |
JP4576674B2 (en) * | 2000-06-26 | 2010-11-10 | 豊田合成株式会社 | Group III nitride compound semiconductor device |
US6841808B2 (en) * | 2000-06-23 | 2005-01-11 | Toyoda Gosei Co., Ltd. | Group III nitride compound semiconductor device and method for producing the same |
GB2365208A (en) * | 2000-07-19 | 2002-02-13 | Juses Chao | Amorphous alingan light emitting diode |
DE10056475B4 (en) * | 2000-11-15 | 2010-10-07 | Osram Opto Semiconductors Gmbh | GaN-based radiation-emitting semiconductor device with improved p-type conductivity and method for its production |
US6791119B2 (en) * | 2001-02-01 | 2004-09-14 | Cree, Inc. | Light emitting diodes including modifications for light extraction |
US6794684B2 (en) | 2001-02-01 | 2004-09-21 | Cree, Inc. | Reflective ohmic contacts for silicon carbide including a layer consisting essentially of nickel, methods of fabricating same, and light emitting devices including the same |
JP2002289955A (en) * | 2001-03-23 | 2002-10-04 | Sharp Corp | Semiconductor laser element, manufacturing method therefor and optical information reproducing device |
US6784074B2 (en) | 2001-05-09 | 2004-08-31 | Nsc-Nanosemiconductor Gmbh | Defect-free semiconductor templates for epitaxial growth and method of making same |
US6653166B2 (en) * | 2001-05-09 | 2003-11-25 | Nsc-Nanosemiconductor Gmbh | Semiconductor device and method of making same |
US6630692B2 (en) * | 2001-05-29 | 2003-10-07 | Lumileds Lighting U.S., Llc | III-Nitride light emitting devices with low driving voltage |
US7067849B2 (en) | 2001-07-17 | 2006-06-27 | Lg Electronics Inc. | Diode having high brightness and method thereof |
US7211833B2 (en) * | 2001-07-23 | 2007-05-01 | Cree, Inc. | Light emitting diodes including barrier layers/sublayers |
US6740906B2 (en) | 2001-07-23 | 2004-05-25 | Cree, Inc. | Light emitting diodes including modifications for submount bonding |
US6949395B2 (en) | 2001-10-22 | 2005-09-27 | Oriol, Inc. | Method of making diode having reflective layer |
US7148520B2 (en) | 2001-10-26 | 2006-12-12 | Lg Electronics Inc. | Diode having vertical structure and method of manufacturing the same |
US20030090103A1 (en) * | 2001-11-09 | 2003-05-15 | Thomas Becker | Direct mailing device |
US7030428B2 (en) | 2001-12-03 | 2006-04-18 | Cree, Inc. | Strain balanced nitride heterojunction transistors |
EP2261988B1 (en) | 2002-04-30 | 2016-03-30 | Cree, Inc. | High voltage switching devices and process for forming same |
US6841001B2 (en) * | 2002-07-19 | 2005-01-11 | Cree, Inc. | Strain compensated semiconductor structures and methods of fabricating strain compensated semiconductor structures |
KR100497890B1 (en) * | 2002-08-19 | 2005-06-29 | 엘지이노텍 주식회사 | Nitride semiconductor LED and fabrication method for thereof |
US20060048700A1 (en) * | 2002-09-05 | 2006-03-09 | Wanlass Mark W | Method for achieving device-quality, lattice-mismatched, heteroepitaxial active layers |
KR100525545B1 (en) * | 2003-06-25 | 2005-10-31 | 엘지이노텍 주식회사 | Nitride semiconductor LED and fabrication method for thereof |
KR100576857B1 (en) * | 2003-12-24 | 2006-05-10 | 삼성전기주식회사 | Gallium nitride semiconductor light emitting device and method of manufacturing the same |
US6943381B2 (en) * | 2004-01-30 | 2005-09-13 | Lumileds Lighting U.S., Llc | III-nitride light-emitting devices with improved high-current efficiency |
US7119374B2 (en) * | 2004-02-20 | 2006-10-10 | Supernova Optoelectronics Corp. | Gallium nitride based light emitting device and the fabricating method for the same |
US6989555B2 (en) * | 2004-04-21 | 2006-01-24 | Lumileds Lighting U.S., Llc | Strain-controlled III-nitride light emitting device |
US7452737B2 (en) * | 2004-11-15 | 2008-11-18 | Philips Lumileds Lighting Company, Llc | Molded lens over LED die |
US7344902B2 (en) | 2004-11-15 | 2008-03-18 | Philips Lumileds Lighting Company, Llc | Overmolded lens over LED die |
US7352011B2 (en) * | 2004-11-15 | 2008-04-01 | Philips Lumileds Lighting Company, Llc | Wide emitting lens for LED useful for backlighting |
US7858408B2 (en) * | 2004-11-15 | 2010-12-28 | Koninklijke Philips Electronics N.V. | LED with phosphor tile and overmolded phosphor in lens |
US7244630B2 (en) * | 2005-04-05 | 2007-07-17 | Philips Lumileds Lighting Company, Llc | A1InGaP LED having reduced temperature dependence |
US7952112B2 (en) * | 2005-04-29 | 2011-05-31 | Philips Lumileds Lighting Company Llc | RGB thermal isolation substrate |
JP2007081180A (en) * | 2005-09-15 | 2007-03-29 | Matsushita Electric Ind Co Ltd | Semiconductor light-emitting element |
US8334155B2 (en) * | 2005-09-27 | 2012-12-18 | Philips Lumileds Lighting Company Llc | Substrate for growing a III-V light emitting device |
US20070069225A1 (en) * | 2005-09-27 | 2007-03-29 | Lumileds Lighting U.S., Llc | III-V light emitting device |
US20070076412A1 (en) * | 2005-09-30 | 2007-04-05 | Lumileds Lighting U.S., Llc | Light source with light emitting array and collection optic |
US7543959B2 (en) * | 2005-10-11 | 2009-06-09 | Philips Lumiled Lighting Company, Llc | Illumination system with optical concentrator and wavelength converting element |
CN101385145B (en) * | 2006-01-05 | 2011-06-08 | 伊鲁米特克斯公司 | Separate optical device for directing light from an LED |
CN101553928B (en) * | 2006-10-02 | 2011-06-01 | 伊鲁米特克有限公司 | Led system and method |
US20090275266A1 (en) * | 2006-10-02 | 2009-11-05 | Illumitex, Inc. | Optical device polishing |
US7534638B2 (en) * | 2006-12-22 | 2009-05-19 | Philips Lumiled Lighting Co., Llc | III-nitride light emitting devices grown on templates to reduce strain |
EP2240968A1 (en) * | 2008-02-08 | 2010-10-20 | Illumitex, Inc. | System and method for emitter layer shaping |
US20090230409A1 (en) * | 2008-03-17 | 2009-09-17 | Philips Lumileds Lighting Company, Llc | Underfill process for flip-chip leds |
WO2009141724A1 (en) * | 2008-05-23 | 2009-11-26 | S.O.I.Tec Silicon On Insulator Technologies | Formation of substantially pit free indium gallium nitride |
EP2329056B1 (en) * | 2008-08-28 | 2012-12-19 | Soitec | Uv absorption based monitor and control of chloride gas stream |
US7858409B2 (en) * | 2008-09-18 | 2010-12-28 | Koninklijke Philips Electronics N.V. | White point compensated LEDs for LCD displays |
TW201034256A (en) * | 2008-12-11 | 2010-09-16 | Illumitex Inc | Systems and methods for packaging light-emitting diode devices |
US8431423B2 (en) * | 2009-07-16 | 2013-04-30 | Koninklijke Philips Electronics N.V. | Reflective substrate for LEDS |
US20110031516A1 (en) | 2009-08-07 | 2011-02-10 | Koninklijke Philips Electronics N.V. | Led with silicone layer and laminated remote phosphor layer |
US8585253B2 (en) | 2009-08-20 | 2013-11-19 | Illumitex, Inc. | System and method for color mixing lens array |
US8449128B2 (en) * | 2009-08-20 | 2013-05-28 | Illumitex, Inc. | System and method for a lens and phosphor layer |
US20110049545A1 (en) | 2009-09-02 | 2011-03-03 | Koninklijke Philips Electronics N.V. | Led package with phosphor plate and reflective substrate |
US20110057213A1 (en) * | 2009-09-08 | 2011-03-10 | Koninklijke Philips Electronics N.V. | Iii-nitride light emitting device with curvat1jre control layer |
FR2953328B1 (en) * | 2009-12-01 | 2012-03-30 | S O I Tec Silicon On Insulator Tech | HETEROSTRUCTURE FOR ELECTRONIC POWER COMPONENTS, OPTOELECTRONIC OR PHOTOVOLTAIC COMPONENTS |
US8232117B2 (en) | 2010-04-30 | 2012-07-31 | Koninklijke Philips Electronics N.V. | LED wafer with laminated phosphor layer |
TW201216526A (en) | 2010-08-20 | 2012-04-16 | Koninkl Philips Electronics Nv | Lamination process for LEDs |
US9082948B2 (en) | 2011-02-03 | 2015-07-14 | Soitec | Methods of fabricating semiconductor structures using thermal spray processes, and semiconductor structures fabricated using such methods |
US8436363B2 (en) | 2011-02-03 | 2013-05-07 | Soitec | Metallic carrier for layer transfer and methods for forming the same |
US9142412B2 (en) | 2011-02-03 | 2015-09-22 | Soitec | Semiconductor devices including substrate layers and overlying semiconductor layers having closely matching coefficients of thermal expansion, and related methods |
US8896010B2 (en) | 2012-01-24 | 2014-11-25 | Cooledge Lighting Inc. | Wafer-level flip chip device packages and related methods |
US8907362B2 (en) | 2012-01-24 | 2014-12-09 | Cooledge Lighting Inc. | Light-emitting dies incorporating wavelength-conversion materials and related methods |
US20130187540A1 (en) | 2012-01-24 | 2013-07-25 | Michael A. Tischler | Discrete phosphor chips for light-emitting devices and related methods |
US9496279B2 (en) | 2012-02-29 | 2016-11-15 | Kyocera Corporation | Composite substrate |
US9312432B2 (en) * | 2012-03-13 | 2016-04-12 | Tsmc Solid State Lighting Ltd. | Growing an improved P-GaN layer of an LED through pressure ramping |
KR102139777B1 (en) | 2012-03-29 | 2020-08-03 | 루미리즈 홀딩 비.브이. | Phosphor in inorganic binder for led applications |
US9343613B2 (en) | 2012-03-29 | 2016-05-17 | Koninklijke Philips N.V. | Phosphor in inorganic binder for LED applications |
KR102183516B1 (en) | 2012-07-05 | 2020-11-27 | 루미리즈 홀딩 비.브이. | Phosphor separated from led by transparent spacer |
EP2873101B1 (en) * | 2012-07-11 | 2020-09-16 | Lumileds Holding B.V. | Reducing or eliminating nanopipe defects in iii-nitride structures |
JP6223075B2 (en) * | 2012-10-09 | 2017-11-01 | キヤノン株式会社 | Light emitting device manufacturing method and light emitting device |
WO2014057748A1 (en) * | 2012-10-12 | 2014-04-17 | 住友電気工業株式会社 | Group iii nitride composite substrate, manufacturing method therefor, and group iii nitride semiconductor device manufacturing method |
US9412911B2 (en) | 2013-07-09 | 2016-08-09 | The Silanna Group Pty Ltd | Optical tuning of light emitting semiconductor junctions |
WO2015119858A1 (en) | 2014-02-05 | 2015-08-13 | Cooledge Lighting Inc. | Light-emitting dies incorporating wavelength-conversion materials and related methods |
JP7071118B2 (en) * | 2014-08-19 | 2022-05-18 | ルミレッズ ホールディング ベーフェー | Sapphire collector to reduce mechanical damage during die-level laser lift-off |
CN104733576B (en) * | 2015-02-28 | 2017-07-25 | 华灿光电(苏州)有限公司 | LED epitaxial slice and preparation method thereof |
JP6146455B2 (en) * | 2015-03-24 | 2017-06-14 | 日亜化学工業株式会社 | Method for manufacturing light emitting device |
US9873170B2 (en) | 2015-03-24 | 2018-01-23 | Nichia Corporation | Method of manufacturing light emitting element |
KR102572643B1 (en) * | 2015-05-13 | 2023-08-31 | 루미리즈 홀딩 비.브이. | Sapphire collector to reduce mechanical damage during die-level laser lift-off |
WO2017047011A1 (en) * | 2015-09-15 | 2017-03-23 | 信越半導体株式会社 | Method of mounting light-emitting element |
WO2018022456A1 (en) | 2016-07-26 | 2018-02-01 | Cree, Inc. | Light emitting diodes, components and related methods |
US11024785B2 (en) * | 2018-05-25 | 2021-06-01 | Creeled, Inc. | Light-emitting diode packages |
US11233183B2 (en) | 2018-08-31 | 2022-01-25 | Creeled, Inc. | Light-emitting diodes, light-emitting diode arrays and related devices |
USD902448S1 (en) | 2018-08-31 | 2020-11-17 | Cree, Inc. | Light emitting diode package |
US11335833B2 (en) | 2018-08-31 | 2022-05-17 | Creeled, Inc. | Light-emitting diodes, light-emitting diode arrays and related devices |
US11101411B2 (en) | 2019-06-26 | 2021-08-24 | Creeled, Inc. | Solid-state light emitting devices including light emitting diodes in package structures |
Family Cites Families (30)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63198320A (en) * | 1987-02-13 | 1988-08-17 | Mitsubishi Electric Corp | Crystal growth method |
JPS6484773A (en) * | 1987-09-28 | 1989-03-30 | Mitsubishi Electric Corp | Semiconductor laser device and manufacture thereof |
JPH01103998A (en) * | 1987-10-16 | 1989-04-21 | Furukawa Electric Co Ltd:The | Formation of iii-v compound semiconductor p-type crystal |
JPH01212483A (en) * | 1988-02-19 | 1989-08-25 | Nec Corp | Semiconductor device |
JP2653562B2 (en) * | 1991-02-05 | 1997-09-17 | 三菱電機株式会社 | Semiconductor laser and method of manufacturing the same |
JPH05175607A (en) * | 1991-06-18 | 1993-07-13 | Matsushita Electric Ind Co Ltd | Method of forming semiconductor multilayer film and manufacture of semiconductor laser |
US5381756A (en) * | 1992-03-04 | 1995-01-17 | Fujitsu Limited | Magnesium doping in III-V compound semiconductor |
US5436466A (en) * | 1992-08-19 | 1995-07-25 | Goldstar Co., Ltd. | Semiconductor laser diode |
US5488233A (en) * | 1993-03-11 | 1996-01-30 | Kabushiki Kaisha Toshiba | Semiconductor light-emitting device with compound semiconductor layer |
JPH07176821A (en) * | 1993-12-20 | 1995-07-14 | Matsushita Electric Ind Co Ltd | Semiconductor laser and its manufacture |
US5656832A (en) * | 1994-03-09 | 1997-08-12 | Kabushiki Kaisha Toshiba | Semiconductor heterojunction device with ALN buffer layer of 3nm-10nm average film thickness |
JPH08167392A (en) * | 1994-12-13 | 1996-06-25 | Canon Inc | Image display device and its manufacture |
JPH08264833A (en) | 1995-03-10 | 1996-10-11 | Hewlett Packard Co <Hp> | Light emitting diode |
TW290743B (en) * | 1995-03-27 | 1996-11-11 | Sumitomo Electric Industries | |
US5670798A (en) | 1995-03-29 | 1997-09-23 | North Carolina State University | Integrated heterostructures of Group III-V nitride semiconductor materials including epitaxial ohmic contact non-nitride buffer layer and methods of fabricating same |
JPH08288544A (en) * | 1995-04-14 | 1996-11-01 | Toshiba Corp | Semiconductor light-emitting element |
JP3719613B2 (en) | 1995-04-24 | 2005-11-24 | シャープ株式会社 | Semiconductor light emitting device |
JP3771952B2 (en) * | 1995-06-28 | 2006-05-10 | ソニー株式会社 | Method for growing single crystal III-V compound semiconductor layer, method for manufacturing light emitting element, and method for manufacturing transistor |
JP2795226B2 (en) | 1995-07-27 | 1998-09-10 | 日本電気株式会社 | Semiconductor light emitting device and method of manufacturing the same |
EP0762516B1 (en) * | 1995-08-28 | 1999-04-21 | Mitsubishi Cable Industries, Ltd. | Group-III nitride based light emitter |
JP3399216B2 (en) | 1996-03-14 | 2003-04-21 | ソニー株式会社 | Semiconductor light emitting device |
JP3216700B2 (en) * | 1996-05-22 | 2001-10-09 | サンケン電気株式会社 | Semiconductor light emitting device |
JPH1033988A (en) * | 1996-07-24 | 1998-02-10 | Miki Riken Kogyo Kk | Inorganic oxide composite and its producing process |
JPH1065271A (en) * | 1996-08-13 | 1998-03-06 | Toshiba Corp | Gallium nitride based semiconductor light-emitting element |
US5729029A (en) * | 1996-09-06 | 1998-03-17 | Hewlett-Packard Company | Maximizing electrical doping while reducing material cracking in III-V nitride semiconductor devices |
JPH10150245A (en) * | 1996-11-21 | 1998-06-02 | Matsushita Electric Ind Co Ltd | Manufacture of gallium nitride semiconductor |
US5741724A (en) * | 1996-12-27 | 1998-04-21 | Motorola | Method of growing gallium nitride on a spinel substrate |
TW329058B (en) * | 1997-03-20 | 1998-04-01 | Ind Tech Res Inst | Manufacturing method for P type gallium nitride |
JPH1140891A (en) * | 1997-07-15 | 1999-02-12 | Nec Corp | Gallium nitride semiconductor light-emitting device and manufacture thereof |
DE19855476A1 (en) * | 1997-12-02 | 1999-06-17 | Murata Manufacturing Co | Gallium nitride based semiconductor layer is formed by electron cyclotron resonance molecular beam epitaxy |
-
1998
- 1998-06-05 US US09/092,478 patent/US6194742B1/en not_active Expired - Lifetime
-
1999
- 1999-02-10 DE DE19905516A patent/DE19905516C2/en not_active Expired - Lifetime
- 1999-06-02 JP JP15495799A patent/JP4677065B2/en not_active Expired - Lifetime
- 1999-06-03 GB GB9912940A patent/GB2338109A/en not_active Withdrawn
-
2000
- 2000-09-06 US US09/655,752 patent/US6274399B1/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US6194742B1 (en) | 2001-02-27 |
DE19905516A1 (en) | 1999-12-09 |
GB2338109A (en) | 1999-12-08 |
JP4677065B2 (en) | 2011-04-27 |
DE19905516C2 (en) | 2001-02-15 |
US6274399B1 (en) | 2001-08-14 |
JP2000031539A (en) | 2000-01-28 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
GB9912940D0 (en) | Light-emitting diode | |
GB9926183D0 (en) | LED components | |
GB9917515D0 (en) | Light emitting diode assembly | |
EP1221511A4 (en) | Light-emitting block | |
GB9921483D0 (en) | Light emitting devices | |
GB0012650D0 (en) | Light-emitting structure | |
EP1018857A4 (en) | Electroluminescent element | |
HK1050425A1 (en) | Organic light-emitting devices | |
GB0003517D0 (en) | Light-emitting devices | |
EP0976589A4 (en) | Luminescent diode | |
EP1320899A4 (en) | Enhanced light-emitting diode | |
GB9810798D0 (en) | Light emitting devices | |
GB9910799D0 (en) | Light-emitting devices | |
HUP0105247A3 (en) | Lighting arrangement | |
GB2344458B (en) | Light-emitting diodes | |
EP0987770A4 (en) | Semiconductor light-emitting diode | |
IL142956A0 (en) | Light-emitting adder | |
GB9913449D0 (en) | Light-emitting devices | |
DE69842207D1 (en) | Diode | |
GB2358288B (en) | Infrared light emitting diodes | |
GB2371679B (en) | Light-emitting devices | |
GB9901716D0 (en) | Light emitting diode | |
GB0017658D0 (en) | Light emitting diodes | |
GB0017655D0 (en) | Light emtting diode arrangements | |
GB9827827D0 (en) | Organic light-emitting devices |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
732E | Amendments to the register in respect of changes of name or changes affecting rights (sect. 32/1977) | ||
WAP | Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1) |