DE69231091T2 - Integrierte Halbleiterschaltung mit einer Schutzvorrichtung - Google Patents

Integrierte Halbleiterschaltung mit einer Schutzvorrichtung

Info

Publication number
DE69231091T2
DE69231091T2 DE69231091T DE69231091T DE69231091T2 DE 69231091 T2 DE69231091 T2 DE 69231091T2 DE 69231091 T DE69231091 T DE 69231091T DE 69231091 T DE69231091 T DE 69231091T DE 69231091 T2 DE69231091 T2 DE 69231091T2
Authority
DE
Germany
Prior art keywords
protective device
semiconductor circuit
integrated semiconductor
integrated
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69231091T
Other languages
English (en)
Other versions
DE69231091D1 (de
Inventor
Stephen Wilton Byatt
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Power Innovations Ltd
Original Assignee
Power Innovations Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Power Innovations Ltd filed Critical Power Innovations Ltd
Application granted granted Critical
Publication of DE69231091D1 publication Critical patent/DE69231091D1/de
Publication of DE69231091T2 publication Critical patent/DE69231091T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/7404—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device
    • H01L29/7412—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device the device being a diode
    • H01L29/7416—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device the device being a diode the device being an antiparallel diode, e.g. RCT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/7404—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Thyristors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
DE69231091T 1991-12-30 1992-12-14 Integrierte Halbleiterschaltung mit einer Schutzvorrichtung Expired - Lifetime DE69231091T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB919127476A GB9127476D0 (en) 1991-12-30 1991-12-30 A semiconductor integrated circuit

Publications (2)

Publication Number Publication Date
DE69231091D1 DE69231091D1 (de) 2000-06-29
DE69231091T2 true DE69231091T2 (de) 2000-09-14

Family

ID=10706887

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69231091T Expired - Lifetime DE69231091T2 (de) 1991-12-30 1992-12-14 Integrierte Halbleiterschaltung mit einer Schutzvorrichtung

Country Status (5)

Country Link
US (1) US5304823A (de)
EP (1) EP0550198B1 (de)
JP (1) JP3175985B2 (de)
DE (1) DE69231091T2 (de)
GB (1) GB9127476D0 (de)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2734113B1 (fr) * 1995-05-12 1997-07-25 Sgs Thomson Microelectronics Composant de protection complet de circuit d'interface de lignes d'abonnes
FR2734114B1 (fr) * 1995-05-12 1997-07-25 Sgs Thomson Microelectronics Composant de protection sensible de circuit d'interface de lignes d'abonnes
FR2773265B1 (fr) * 1997-12-30 2000-03-10 Sgs Thomson Microelectronics Circuit de protection d'interface d'abonnes
DE102005029867B3 (de) * 2005-06-27 2007-02-22 Siemens Ag Schutzschaltung in einer Einrichtung zur Einkopplung von Fernspeisespannungen
US8530964B2 (en) * 2011-12-08 2013-09-10 Infineon Technologies Ag Semiconductor device including first and second semiconductor elements
US8901647B2 (en) 2011-12-08 2014-12-02 Infineon Technologies Ag Semiconductor device including first and second semiconductor elements
US20230118951A1 (en) 2020-03-31 2023-04-20 Hitachi Energy Switzerland Ag Power Semiconductor Device Comprising a Thyristor and a Bipolar Junction Transistor

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5942990B2 (ja) * 1977-03-26 1984-10-18 三菱電機株式会社 半導体スイツチ
US4529998A (en) * 1977-12-14 1985-07-16 Eaton Corporation Amplified gate thyristor with non-latching amplified control transistors across base layers
JPS56112751A (en) * 1980-02-13 1981-09-05 Toshiba Corp Switching element
US4797720A (en) * 1981-07-29 1989-01-10 American Telephone And Telegraph Company, At&T Bell Laboratories Controlled breakover bidirectional semiconductor switch
SE431381B (sv) * 1982-06-03 1984-01-30 Asea Ab Tvapoligt overstromsskydd
DE3234092A1 (de) * 1982-09-14 1984-03-15 Siemens AG, 1000 Berlin und 8000 München Schaltungsanordnung fuer den ueberspannungsschutz einer monolithisch integrierten bipolaren halbleiterschaltung
GB8305878D0 (en) * 1983-03-03 1983-04-07 Texas Instruments Ltd Starter circuit
FR2566582B1 (fr) * 1984-06-22 1987-02-20 Silicium Semiconducteur Ssc Dispositif bidirectionnel de protection declenche par avalanche
FR2598043A1 (fr) * 1986-04-25 1987-10-30 Thomson Csf Composant semiconducteur de protection contre les surtensions et surintensites
AR240631A1 (es) * 1986-06-06 1990-06-30 Siemens Ag Disposicion de circuito para proteger circuitos electronicos de interfase de circuitos de conexion de abonado de una red telefonica tiempo-multiplex digital
JPH01133414A (ja) * 1987-11-18 1989-05-25 Mitsubishi Electric Corp カスコードＢｉＭＯＳ駆動回路
GB2218872B (en) * 1988-05-19 1992-01-29 Texas Instruments Ltd Improvements in and relating to overvoltage protectors
US4868703A (en) * 1989-02-06 1989-09-19 Northern Telecom Limited Solid state switching device

Also Published As

Publication number Publication date
GB9127476D0 (en) 1992-02-19
JP3175985B2 (ja) 2001-06-11
JPH05251690A (ja) 1993-09-28
EP0550198A1 (de) 1993-07-07
EP0550198B1 (de) 2000-05-24
US5304823A (en) 1994-04-19
DE69231091D1 (de) 2000-06-29

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