DE69229937D1 - Avalanche Diode in einer bipolaren integrierten Schaltung - Google Patents
Avalanche Diode in einer bipolaren integrierten SchaltungInfo
- Publication number
- DE69229937D1 DE69229937D1 DE69229937T DE69229937T DE69229937D1 DE 69229937 D1 DE69229937 D1 DE 69229937D1 DE 69229937 T DE69229937 T DE 69229937T DE 69229937 T DE69229937 T DE 69229937T DE 69229937 D1 DE69229937 D1 DE 69229937D1
- Authority
- DE
- Germany
- Prior art keywords
- integrated circuit
- avalanche diode
- bipolar integrated
- bipolar
- avalanche
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/866—Zener diodes
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Bipolar Integrated Circuits (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR9108418A FR2678430B1 (fr) | 1991-06-28 | 1991-06-28 | Diode a avalanche dans un circuit integre bipolaire. |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69229937D1 true DE69229937D1 (de) | 1999-10-14 |
DE69229937T2 DE69229937T2 (de) | 2000-01-27 |
Family
ID=9414739
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69229937T Expired - Fee Related DE69229937T2 (de) | 1991-06-28 | 1992-06-23 | Avalanche Diode in einer bipolaren integrierten Schaltung |
Country Status (5)
Country | Link |
---|---|
US (1) | US5298788A (de) |
EP (1) | EP0521802B1 (de) |
JP (1) | JP3302403B2 (de) |
DE (1) | DE69229937T2 (de) |
FR (1) | FR2678430B1 (de) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5422508A (en) * | 1992-09-21 | 1995-06-06 | Siliconix Incorporated | BiCDMOS structure |
FR2702308B1 (fr) * | 1993-03-01 | 1995-05-24 | Sgs Thomson Microelectronics | Diode à avalanche dans un circuit intégré bipolaire. |
US5528189A (en) * | 1993-12-21 | 1996-06-18 | Texas Instruments Incorporated | Noise performance of amplifiers |
US5477078A (en) * | 1994-02-18 | 1995-12-19 | Analog Devices, Incorporated | Integrated circuit (IC) with a two-terminal diode device to protect metal-oxide-metal capacitors from ESD damage |
DE69415500T2 (de) * | 1994-03-31 | 1999-05-20 | Stmicroelectronics S.R.L., Agrate Brianza, Mailand/Milano | Verfahren zur Herstellung eines Halbleiterbauteils mit vergrabenem Übergang |
EP1191598B1 (de) * | 2000-01-18 | 2007-12-19 | Siemens Schweiz AG | Verfahren zur Herstellung eines Halbleiter-Photosensors |
US7973386B1 (en) * | 2007-01-12 | 2011-07-05 | National Semiconductor Corporation | ESD protection bipolar device with internal avalanche diode |
JP5604901B2 (ja) * | 2010-02-18 | 2014-10-15 | 株式会社豊田中央研究所 | 電流増幅素子 |
US20170179226A1 (en) * | 2015-12-18 | 2017-06-22 | Microchip Technology Incorporated | Ultrasound t/r isoltation disolator with fast recovery time on soi |
JP7129199B2 (ja) * | 2018-04-11 | 2022-09-01 | キヤノン株式会社 | 光検出装置、光検出システム及び移動体 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5574059U (de) * | 1978-11-15 | 1980-05-21 | ||
US4319257A (en) * | 1980-01-16 | 1982-03-09 | Harris Corporation | Low thermal coefficient semiconductor device |
US4441114A (en) * | 1981-12-22 | 1984-04-03 | International Business Machines Corporation | CMOS Subsurface breakdown zener diode |
JPS5988871A (ja) * | 1982-11-12 | 1984-05-22 | バ−・ブラウン・コ−ポレ−ション | 高安定低電圧集積回路表面下降状ダイオ−ド構造体及びその製造方法 |
US4758872A (en) * | 1984-10-25 | 1988-07-19 | Nec Corporation | Integrated circuit fabricated in a semiconductor substrate |
US4766469A (en) * | 1986-01-06 | 1988-08-23 | Siliconix Incorporated | Integrated buried zener diode and temperature compensation transistor |
US4910160A (en) * | 1989-06-06 | 1990-03-20 | National Semiconductor Corporation | High voltage complementary NPN/PNP process |
US5027165A (en) * | 1990-05-22 | 1991-06-25 | Maxim Integrated Products | Buried zener diode |
-
1991
- 1991-06-28 FR FR9108418A patent/FR2678430B1/fr not_active Expired - Lifetime
-
1992
- 1992-06-23 EP EP92420214A patent/EP0521802B1/de not_active Expired - Lifetime
- 1992-06-23 DE DE69229937T patent/DE69229937T2/de not_active Expired - Fee Related
- 1992-06-26 US US07/904,054 patent/US5298788A/en not_active Expired - Lifetime
- 1992-06-26 JP JP16871692A patent/JP3302403B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JPH05206484A (ja) | 1993-08-13 |
JP3302403B2 (ja) | 2002-07-15 |
US5298788A (en) | 1994-03-29 |
FR2678430A1 (fr) | 1992-12-31 |
EP0521802B1 (de) | 1999-09-08 |
EP0521802A3 (en) | 1994-05-11 |
DE69229937T2 (de) | 2000-01-27 |
FR2678430B1 (fr) | 1993-10-29 |
EP0521802A2 (de) | 1993-01-07 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |