DE69308051D1 - Schutzdiodennetz bildende integrierte Schaltung - Google Patents

Schutzdiodennetz bildende integrierte Schaltung

Info

Publication number
DE69308051D1
DE69308051D1 DE69308051T DE69308051T DE69308051D1 DE 69308051 D1 DE69308051 D1 DE 69308051D1 DE 69308051 T DE69308051 T DE 69308051T DE 69308051 T DE69308051 T DE 69308051T DE 69308051 D1 DE69308051 D1 DE 69308051D1
Authority
DE
Germany
Prior art keywords
integrated circuit
circuit forming
protective diode
forming protective
diode network
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69308051T
Other languages
English (en)
Other versions
DE69308051T2 (de
Inventor
Eric Bernier
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SA
Original Assignee
SGS Thomson Microelectronics SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SGS Thomson Microelectronics SA filed Critical SGS Thomson Microelectronics SA
Application granted granted Critical
Publication of DE69308051D1 publication Critical patent/DE69308051D1/de
Publication of DE69308051T2 publication Critical patent/DE69308051T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
DE69308051T 1992-03-26 1993-03-23 Schutzdiodennetz bildende integrierte Schaltung Expired - Fee Related DE69308051T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR929204130A FR2689317B1 (fr) 1992-03-26 1992-03-26 Circuit integre constituant un reseau de diodes de protection.

Publications (2)

Publication Number Publication Date
DE69308051D1 true DE69308051D1 (de) 1997-03-27
DE69308051T2 DE69308051T2 (de) 1997-09-25

Family

ID=9428492

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69308051T Expired - Fee Related DE69308051T2 (de) 1992-03-26 1993-03-23 Schutzdiodennetz bildende integrierte Schaltung

Country Status (5)

Country Link
US (1) US5338964A (de)
EP (1) EP0562982B1 (de)
JP (1) JP3786434B2 (de)
DE (1) DE69308051T2 (de)
FR (1) FR2689317B1 (de)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2687009B1 (fr) * 1992-01-31 1994-04-29 Sgs Thomson Microelectronics Composant de protection pour circuit automobile.
FR2704094B1 (fr) * 1993-04-13 1995-07-07 Sgs Thomson Microelectronics Réseau de diodes monolithique.
FR2708145B1 (fr) * 1993-07-21 1995-10-06 Sgs Thomson Microelectronics Composant monolithique comprenant une diode de protection en parallèle avec une pluralité de paires de diodes en série.
EP0646964B1 (de) * 1993-09-30 1999-12-15 Consorzio per la Ricerca sulla Microelettronica nel Mezzogiorno Integrierte aktive Klammerungsstruktur für den Schutz von Leistungsanordnungen gegen Überspannungen, und Verfahren zu ihrer Herstellung
JP3186405B2 (ja) * 1994-03-08 2001-07-11 富士電機株式会社 横型ｍｏｓｆｅｔ
US5763918A (en) * 1996-10-22 1998-06-09 International Business Machines Corp. ESD structure that employs a schottky-barrier to reduce the likelihood of latch-up
JP3169844B2 (ja) * 1996-12-11 2001-05-28 日本電気株式会社 半導体装置
DE19853743C2 (de) * 1998-11-21 2000-10-12 Micronas Intermetall Gmbh Halbleiter-Bauelement mit wenigstens einer Zenerdiode und wenigstens einer dazu parallel geschalteten Schottky-Diode sowie Verfahren zum Herstellen der Halbleiter-Bauelemente
DE10004983C1 (de) * 2000-02-04 2001-09-13 Infineon Technologies Ag Schutzanordnung für Schottky-Diode
JP2005529533A (ja) * 2002-06-11 2005-09-29 コーニンクレッカ　フィリップス　エレクトロニクス　エヌ　ヴィ Ｅｓｄ保護回路を有する集積回路を備えるデータキャリア
DE10238798B3 (de) * 2002-08-23 2004-03-18 Infineon Technologies Ag Hochfrequenzschalter
US7014126B2 (en) * 2004-03-17 2006-03-21 Festo Corporation Sorting machine for diverting an article from an article stream
US7880223B2 (en) * 2005-02-11 2011-02-01 Alpha & Omega Semiconductor, Ltd. Latch-up free vertical TVS diode array structure using trench isolation
US7633135B2 (en) * 2007-07-22 2009-12-15 Alpha & Omega Semiconductor, Ltd. Bottom anode Schottky diode structure and method
KR101320516B1 (ko) * 2007-07-20 2013-10-22 삼성전자주식회사 정전압 방전 보호 회로를 포함하는 반도체 소자 및 그 제조방법
US20090039456A1 (en) * 2007-08-08 2009-02-12 Alpha & Omega Semiconductor, Ltd Structures and methods for forming Schottky diodes on a P-substrate or a bottom anode Schottky diode
US7781859B2 (en) * 2008-03-24 2010-08-24 Taiwan Semiconductor Manufacturing Company, Ltd. Schottky diode structures having deep wells for improving breakdown voltages
DE102009046606A1 (de) * 2009-11-11 2011-05-12 Robert Bosch Gmbh Schutzelement für elektronische Schaltungen
CN102157516B (zh) * 2010-12-20 2013-01-16 杭州士兰集成电路有限公司 Led保护二极管的结构及其制造方法
CN102437155B (zh) * 2011-12-09 2013-07-10 杭州士兰集成电路有限公司 高工作电压led保护二极管及其结构和相应的制造方法
US9842836B2 (en) * 2015-04-14 2017-12-12 Rohm Co., Ltd. Diode
TWI737915B (zh) * 2018-06-05 2021-09-01 源芯半導體股份有限公司 暫態電壓抑制元件

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT1186490B (it) * 1985-12-23 1987-11-26 Sgs Microelettronica Spa Diodo schottky integrato
JPS62179756A (ja) * 1986-02-03 1987-08-06 Sanyo Electric Co Ltd 半導体装置
FR2623663B1 (fr) * 1987-11-24 1990-04-13 Sgs Thomson Microelectronics Assemblage monolithique de diodes de protection et systemes de protection
JPH01152659A (ja) * 1987-12-09 1989-06-15 Nippon Inter Electronics Corp 半導体集積回路

Also Published As

Publication number Publication date
JPH07263714A (ja) 1995-10-13
US5338964A (en) 1994-08-16
DE69308051T2 (de) 1997-09-25
FR2689317B1 (fr) 1994-06-17
JP3786434B2 (ja) 2006-06-14
EP0562982B1 (de) 1997-02-12
EP0562982A1 (de) 1993-09-29
FR2689317A1 (fr) 1993-10-01

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Legal Events

Date Code Title Description
8332 No legal effect for de
8370 Indication related to discontinuation of the patent is to be deleted
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee