IT1186490B - Diodo schottky integrato - Google Patents
Diodo schottky integratoInfo
- Publication number
- IT1186490B IT1186490B IT23364/85A IT2336485A IT1186490B IT 1186490 B IT1186490 B IT 1186490B IT 23364/85 A IT23364/85 A IT 23364/85A IT 2336485 A IT2336485 A IT 2336485A IT 1186490 B IT1186490 B IT 1186490B
- Authority
- IT
- Italy
- Prior art keywords
- schottky diode
- integrated schottky
- integrated
- diode
- schottky
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/2205—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities from the substrate during epitaxy, e.g. autodoping; Preventing or using autodoping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/167—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table further characterised by the doping material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
- Bipolar Transistors (AREA)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
IT23364/85A IT1186490B (it) | 1985-12-23 | 1985-12-23 | Diodo schottky integrato |
GB8628416A GB2184599B (en) | 1985-12-23 | 1986-11-27 | Integrated schottky diode |
FR8617976A FR2592226A1 (fr) | 1985-12-23 | 1986-12-22 | Diode schottky integree |
DE19863644253 DE3644253A1 (de) | 1985-12-23 | 1986-12-23 | Integrierte schottky-diode |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
IT23364/85A IT1186490B (it) | 1985-12-23 | 1985-12-23 | Diodo schottky integrato |
Publications (2)
Publication Number | Publication Date |
---|---|
IT8523364A0 IT8523364A0 (it) | 1985-12-23 |
IT1186490B true IT1186490B (it) | 1987-11-26 |
Family
ID=11206434
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IT23364/85A IT1186490B (it) | 1985-12-23 | 1985-12-23 | Diodo schottky integrato |
Country Status (4)
Country | Link |
---|---|
DE (1) | DE3644253A1 (it) |
FR (1) | FR2592226A1 (it) |
GB (1) | GB2184599B (it) |
IT (1) | IT1186490B (it) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3882322T2 (de) * | 1987-09-30 | 1993-10-21 | Texas Instruments Inc | Statischer Speicher in Schottky-Technologie. |
FR2689317B1 (fr) * | 1992-03-26 | 1994-06-17 | Sgs Thomson Microelectronics | Circuit integre constituant un reseau de diodes de protection. |
DE19616605C2 (de) * | 1996-04-25 | 1998-03-26 | Siemens Ag | Schottkydiodenanordnung und Verfahren zur Herstellung |
US7528459B2 (en) * | 2003-05-27 | 2009-05-05 | Nxp B.V. | Punch-through diode and method of processing the same |
US8809988B2 (en) * | 2008-09-04 | 2014-08-19 | Monolithic Power Systems, Inc. | Low leakage and/or low turn-on voltage Schottky diode |
CN101656272B (zh) * | 2009-07-22 | 2011-08-03 | 上海宏力半导体制造有限公司 | 一种肖特基二极管及其制备方法 |
CN113013259A (zh) * | 2021-02-26 | 2021-06-22 | 西安微电子技术研究所 | 一种低导通压降肖特基二极管结构及其制备方法 |
CN114709254B (zh) * | 2022-04-01 | 2023-03-21 | 无锡友达电子有限公司 | 带有复合埋层的高压并联二极管结构及其制备方法 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
BE758683A (fr) * | 1969-11-10 | 1971-05-10 | Ibm | Procede de fabrication d'un dispositif monolithique auto-isolant et structure de transistor a socle |
JPS55141763A (en) * | 1979-04-23 | 1980-11-05 | Hitachi Ltd | Schottky barrier diode and fabricating method of the same |
-
1985
- 1985-12-23 IT IT23364/85A patent/IT1186490B/it active
-
1986
- 1986-11-27 GB GB8628416A patent/GB2184599B/en not_active Expired
- 1986-12-22 FR FR8617976A patent/FR2592226A1/fr not_active Withdrawn
- 1986-12-23 DE DE19863644253 patent/DE3644253A1/de not_active Withdrawn
Also Published As
Publication number | Publication date |
---|---|
GB2184599B (en) | 1989-12-06 |
GB2184599A (en) | 1987-06-24 |
GB8628416D0 (en) | 1986-12-31 |
DE3644253A1 (de) | 1987-06-25 |
IT8523364A0 (it) | 1985-12-23 |
FR2592226A1 (fr) | 1987-06-26 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE3650613D1 (de) | Halbleiteranordnung | |
NO862637D0 (no) | Integrert ryggstykke. | |
DE3684557D1 (de) | Waferintegrierte halbleiteranordnung. | |
DE3683316D1 (de) | Halbleiteranordnung. | |
FI863555A (fi) | Korrugerad papp. | |
DE3679108D1 (de) | Halbleiteranordnungen. | |
DE3679209D1 (de) | Synthetisches immunogen. | |
DE3667879D1 (de) | Halbleiteranordnung. | |
FR2589021B1 (fr) | Lecteur-enregistreur integre | |
DE3680774D1 (de) | Integriertes halbleiterbauelement. | |
FR2585522B1 (fr) | Laser semi-conducteur | |
FR2591818B1 (fr) | Laser a semiconducteurs a renvoi reparti | |
DE3686490D1 (de) | Halbleiterstruktur. | |
DE3686753D1 (de) | Lichtemittierendes halbleiterelement. | |
NL193883B (nl) | Geïntegreerde halfgeleiderinrichting. | |
DE3688490D1 (de) | Lumineszentes halbleiterelement. | |
ATA370685A (de) | Abschalungselement | |
DE3685983D1 (de) | Integrierte halbleiteranordnung. | |
DE3787848D1 (de) | Halbleiterdiode. | |
IT1186490B (it) | Diodo schottky integrato | |
DE3675185D1 (de) | Strukturierter halbleiterkoerper. | |
NO157283C (no) | Underlagsbrikke. | |
DE3686944D1 (de) | Halbleiteranordnung. | |
DE3587782D1 (de) | Dioden mit Schottky-Übergang. | |
DE3683037D1 (de) | Halbleiteranordnung. |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
TA | Fee payment date (situation as of event date), data collected since 19931001 |
Effective date: 19961227 |