DE3644253A1 - Integrierte schottky-diode - Google Patents

Integrierte schottky-diode

Info

Publication number
DE3644253A1
DE3644253A1 DE19863644253 DE3644253A DE3644253A1 DE 3644253 A1 DE3644253 A1 DE 3644253A1 DE 19863644253 DE19863644253 DE 19863644253 DE 3644253 A DE3644253 A DE 3644253A DE 3644253 A1 DE3644253 A1 DE 3644253A1
Authority
DE
Germany
Prior art keywords
silicon
schottky diode
layer
zone
diffusion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE19863644253
Other languages
German (de)
English (en)
Inventor
Franco Bertotti
Paolo Ferrari
Flavio Villa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SRL
Original Assignee
SGS Microelettronica SpA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SGS Microelettronica SpA filed Critical SGS Microelettronica SpA
Publication of DE3644253A1 publication Critical patent/DE3644253A1/de
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/2205—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities from the substrate during epitaxy, e.g. autodoping; Preventing or using autodoping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/167—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table further characterised by the doping material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/872—Schottky diodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
DE19863644253 1985-12-23 1986-12-23 Integrierte schottky-diode Withdrawn DE3644253A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT23364/85A IT1186490B (it) 1985-12-23 1985-12-23 Diodo schottky integrato

Publications (1)

Publication Number Publication Date
DE3644253A1 true DE3644253A1 (de) 1987-06-25

Family

ID=11206434

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19863644253 Withdrawn DE3644253A1 (de) 1985-12-23 1986-12-23 Integrierte schottky-diode

Country Status (4)

Country Link
DE (1) DE3644253A1 (it)
FR (1) FR2592226A1 (it)
GB (1) GB2184599B (it)
IT (1) IT1186490B (it)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0310351A1 (en) * 1987-09-30 1989-04-05 Texas Instruments Incorporated Static memory using Schottky technology
DE19616605A1 (de) * 1996-04-25 1997-10-30 Siemens Ag Schottkydiodenanordnung und Verfahren zur Herstellung

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2689317B1 (fr) * 1992-03-26 1994-06-17 Sgs Thomson Microelectronics Circuit integre constituant un reseau de diodes de protection.
US7528459B2 (en) * 2003-05-27 2009-05-05 Nxp B.V. Punch-through diode and method of processing the same
US8809988B2 (en) * 2008-09-04 2014-08-19 Monolithic Power Systems, Inc. Low leakage and/or low turn-on voltage Schottky diode
CN101656272B (zh) * 2009-07-22 2011-08-03 上海宏力半导体制造有限公司 一种肖特基二极管及其制备方法
CN113013259A (zh) * 2021-02-26 2021-06-22 西安微电子技术研究所 一种低导通压降肖特基二极管结构及其制备方法
CN114709254B (zh) * 2022-04-01 2023-03-21 无锡友达电子有限公司 带有复合埋层的高压并联二极管结构及其制备方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE758683A (fr) * 1969-11-10 1971-05-10 Ibm Procede de fabrication d'un dispositif monolithique auto-isolant et structure de transistor a socle
JPS55141763A (en) * 1979-04-23 1980-11-05 Hitachi Ltd Schottky barrier diode and fabricating method of the same

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0310351A1 (en) * 1987-09-30 1989-04-05 Texas Instruments Incorporated Static memory using Schottky technology
DE19616605A1 (de) * 1996-04-25 1997-10-30 Siemens Ag Schottkydiodenanordnung und Verfahren zur Herstellung
DE19616605C2 (de) * 1996-04-25 1998-03-26 Siemens Ag Schottkydiodenanordnung und Verfahren zur Herstellung
US5907179A (en) * 1996-04-25 1999-05-25 Siemens Aktiengesellschaft Schottky diode assembly and production method
US6191015B1 (en) 1996-04-25 2001-02-20 Siemens Aktiengesellschaft Method for producing a Schottky diode assembly formed on a semiconductor substrate

Also Published As

Publication number Publication date
GB2184599A (en) 1987-06-24
FR2592226A1 (fr) 1987-06-26
IT1186490B (it) 1987-11-26
IT8523364A0 (it) 1985-12-23
GB2184599B (en) 1989-12-06
GB8628416D0 (en) 1986-12-31

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Legal Events

Date Code Title Description
8141 Disposal/no request for examination