IT8523364A0 - Diodo schottky integrato. - Google Patents

Diodo schottky integrato.

Info

Publication number
IT8523364A0
IT8523364A0 IT8523364A IT2336485A IT8523364A0 IT 8523364 A0 IT8523364 A0 IT 8523364A0 IT 8523364 A IT8523364 A IT 8523364A IT 2336485 A IT2336485 A IT 2336485A IT 8523364 A0 IT8523364 A0 IT 8523364A0
Authority
IT
Italy
Prior art keywords
schottky diode
integrated schottky
integrated
diode
schottky
Prior art date
Application number
IT8523364A
Other languages
English (en)
Other versions
IT1186490B (it
Inventor
Franco Bertotti
Paolo Ferrari
Flavio Villa
Original Assignee
Sgs Micrcelettronica S P A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sgs Micrcelettronica S P A filed Critical Sgs Micrcelettronica S P A
Priority to IT23364/85A priority Critical patent/IT1186490B/it
Publication of IT8523364A0 publication Critical patent/IT8523364A0/it
Priority to GB8628416A priority patent/GB2184599B/en
Priority to FR8617976A priority patent/FR2592226A1/fr
Priority to DE19863644253 priority patent/DE3644253A1/de
Application granted granted Critical
Publication of IT1186490B publication Critical patent/IT1186490B/it

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/2205—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities from the substrate during epitaxy, e.g. autodoping; Preventing or using autodoping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/167—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table further characterised by the doping material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/872—Schottky diodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
IT23364/85A 1985-12-23 1985-12-23 Diodo schottky integrato IT1186490B (it)

Priority Applications (4)

Application Number Priority Date Filing Date Title
IT23364/85A IT1186490B (it) 1985-12-23 1985-12-23 Diodo schottky integrato
GB8628416A GB2184599B (en) 1985-12-23 1986-11-27 Integrated schottky diode
FR8617976A FR2592226A1 (fr) 1985-12-23 1986-12-22 Diode schottky integree
DE19863644253 DE3644253A1 (de) 1985-12-23 1986-12-23 Integrierte schottky-diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT23364/85A IT1186490B (it) 1985-12-23 1985-12-23 Diodo schottky integrato

Publications (2)

Publication Number Publication Date
IT8523364A0 true IT8523364A0 (it) 1985-12-23
IT1186490B IT1186490B (it) 1987-11-26

Family

ID=11206434

Family Applications (1)

Application Number Title Priority Date Filing Date
IT23364/85A IT1186490B (it) 1985-12-23 1985-12-23 Diodo schottky integrato

Country Status (4)

Country Link
DE (1) DE3644253A1 (it)
FR (1) FR2592226A1 (it)
GB (1) GB2184599B (it)
IT (1) IT1186490B (it)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0310351B1 (en) * 1987-09-30 1993-07-14 Texas Instruments Incorporated Static memory using schottky technology
FR2689317B1 (fr) * 1992-03-26 1994-06-17 Sgs Thomson Microelectronics Circuit integre constituant un reseau de diodes de protection.
DE19616605C2 (de) * 1996-04-25 1998-03-26 Siemens Ag Schottkydiodenanordnung und Verfahren zur Herstellung
US7528459B2 (en) * 2003-05-27 2009-05-05 Nxp B.V. Punch-through diode and method of processing the same
US8809988B2 (en) * 2008-09-04 2014-08-19 Monolithic Power Systems, Inc. Low leakage and/or low turn-on voltage Schottky diode
CN101656272B (zh) * 2009-07-22 2011-08-03 上海宏力半导体制造有限公司 一种肖特基二极管及其制备方法
CN113013259A (zh) * 2021-02-26 2021-06-22 西安微电子技术研究所 一种低导通压降肖特基二极管结构及其制备方法
CN114709254B (zh) * 2022-04-01 2023-03-21 无锡友达电子有限公司 带有复合埋层的高压并联二极管结构及其制备方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE758683A (fr) * 1969-11-10 1971-05-10 Ibm Procede de fabrication d'un dispositif monolithique auto-isolant et structure de transistor a socle
JPS55141763A (en) * 1979-04-23 1980-11-05 Hitachi Ltd Schottky barrier diode and fabricating method of the same

Also Published As

Publication number Publication date
GB2184599A (en) 1987-06-24
FR2592226A1 (fr) 1987-06-26
IT1186490B (it) 1987-11-26
GB2184599B (en) 1989-12-06
DE3644253A1 (de) 1987-06-25
GB8628416D0 (en) 1986-12-31

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Legal Events

Date Code Title Description
TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19961227