DE69302244D1 - Halbleiter-Schutzkomponente - Google Patents
Halbleiter-SchutzkomponenteInfo
- Publication number
- DE69302244D1 DE69302244D1 DE69302244T DE69302244T DE69302244D1 DE 69302244 D1 DE69302244 D1 DE 69302244D1 DE 69302244 T DE69302244 T DE 69302244T DE 69302244 T DE69302244 T DE 69302244T DE 69302244 D1 DE69302244 D1 DE 69302244D1
- Authority
- DE
- Germany
- Prior art keywords
- protection component
- semiconductor protection
- semiconductor
- component
- protection
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7803—Vertical DMOS transistors, i.e. VDMOS transistors structurally associated with at least one other device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7811—Vertical DMOS transistors, i.e. VDMOS transistors with an edge termination structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB929216953A GB9216953D0 (en) | 1992-08-11 | 1992-08-11 | A semiconductor component |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69302244D1 true DE69302244D1 (de) | 1996-05-23 |
DE69302244T2 DE69302244T2 (de) | 1996-11-07 |
Family
ID=10720114
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69302244T Expired - Fee Related DE69302244T2 (de) | 1992-08-11 | 1993-08-09 | Halbleiter-Schutzkomponente |
Country Status (5)
Country | Link |
---|---|
US (1) | US5352915A (de) |
EP (1) | EP0583037B1 (de) |
JP (1) | JPH06163889A (de) |
DE (1) | DE69302244T2 (de) |
GB (1) | GB9216953D0 (de) |
Families Citing this family (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2705173B1 (fr) * | 1993-05-10 | 1995-07-28 | Sgs Thomson Microelectronics | Composant limiteur de courant serie. |
GB9313651D0 (en) * | 1993-07-01 | 1993-08-18 | Philips Electronics Uk Ltd | A semiconductor device |
US6001678A (en) * | 1995-03-14 | 1999-12-14 | Mitsubishi Denki Kabushiki Kaisha | Insulated gate semiconductor device |
JP3303601B2 (ja) * | 1995-05-19 | 2002-07-22 | 日産自動車株式会社 | 溝型半導体装置 |
US5648670A (en) * | 1995-06-07 | 1997-07-15 | Sgs-Thomson Microelectronics, Inc. | Trench MOS-gated device with a minimum number of masks |
JP3168147B2 (ja) * | 1995-09-14 | 2001-05-21 | 株式会社日立製作所 | 半導体装置とそれを用いた3相インバータ |
US5883402A (en) * | 1995-11-06 | 1999-03-16 | Kabushiki Kaisha Toshiba | Semiconductor device and protection method |
US5818084A (en) * | 1996-05-15 | 1998-10-06 | Siliconix Incorporated | Pseudo-Schottky diode |
JP3397057B2 (ja) * | 1996-11-01 | 2003-04-14 | 日産自動車株式会社 | 半導体装置 |
US5910873A (en) * | 1997-02-19 | 1999-06-08 | National Semiconductor Corporation | Field oxide transistor based feedback circuit for electrical overstress protection |
US5846862A (en) * | 1997-05-20 | 1998-12-08 | Advanced Micro Devices | Semiconductor device having a vertical active region and method of manufacture thereof |
JP3502531B2 (ja) | 1997-08-28 | 2004-03-02 | 株式会社ルネサステクノロジ | 半導体装置の製造方法 |
US6583001B1 (en) * | 2001-05-18 | 2003-06-24 | Sun Microsystems, Inc. | Method for introducing an equivalent RC circuit in a MOS device using resistive paths |
US6586817B1 (en) | 2001-05-18 | 2003-07-01 | Sun Microsystems, Inc. | Device including a resistive path to introduce an equivalent RC circuit |
US20050274985A1 (en) * | 2004-05-26 | 2005-12-15 | Adlerstein Michael G | RF decoupled field plate for FETs |
US7667264B2 (en) * | 2004-09-27 | 2010-02-23 | Alpha And Omega Semiconductor Limited | Shallow source MOSFET |
US7977768B2 (en) * | 2008-04-01 | 2011-07-12 | Infineon Technologies Ag | Semiconductor devices and methods of manufacture thereof |
DE112009004065B4 (de) * | 2009-09-14 | 2019-02-21 | Toyota Jidosha Kabushiki Kaisha | Halbleitereinrichtung mit einem Halbleitersubstrat einschließlich eines Diodenbereichs und eines IGBT-Bereichs |
US8129778B2 (en) * | 2009-12-02 | 2012-03-06 | Fairchild Semiconductor Corporation | Semiconductor devices and methods for making the same |
DE112019005212T5 (de) | 2018-10-18 | 2021-07-08 | Uchiya Thermostat Co., Ltd. | Verfahren zum Verbinden eines elektrischen Bauelements |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2131603B (en) * | 1982-12-03 | 1985-12-18 | Philips Electronic Associated | Semiconductor devices |
GB2134705B (en) * | 1983-01-28 | 1985-12-24 | Philips Electronic Associated | Semiconductor devices |
GB2167229B (en) * | 1984-11-21 | 1988-07-20 | Philips Electronic Associated | Semiconductor devices |
US4767722A (en) * | 1986-03-24 | 1988-08-30 | Siliconix Incorporated | Method for making planar vertical channel DMOS structures |
US5072266A (en) * | 1988-12-27 | 1991-12-10 | Siliconix Incorporated | Trench DMOS power transistor with field-shaping body profile and three-dimensional geometry |
-
1992
- 1992-08-11 GB GB929216953A patent/GB9216953D0/en active Pending
-
1993
- 1993-08-09 US US08/103,943 patent/US5352915A/en not_active Expired - Fee Related
- 1993-08-09 JP JP5197198A patent/JPH06163889A/ja active Pending
- 1993-08-09 EP EP93202343A patent/EP0583037B1/de not_active Expired - Lifetime
- 1993-08-09 DE DE69302244T patent/DE69302244T2/de not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
EP0583037B1 (de) | 1996-04-17 |
DE69302244T2 (de) | 1996-11-07 |
JPH06163889A (ja) | 1994-06-10 |
EP0583037A1 (de) | 1994-02-16 |
US5352915A (en) | 1994-10-04 |
GB9216953D0 (en) | 1992-09-23 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8327 | Change in the person/name/address of the patent owner |
Owner name: KONINKLIJKE PHILIPS ELECTRONICS N.V., EINDHOVEN, N |
|
8339 | Ceased/non-payment of the annual fee |