DE69326262D1 - Verbindungshalbleiterbauelemente - Google Patents

Verbindungshalbleiterbauelemente

Info

Publication number
DE69326262D1
DE69326262D1 DE69326262T DE69326262T DE69326262D1 DE 69326262 D1 DE69326262 D1 DE 69326262D1 DE 69326262 T DE69326262 T DE 69326262T DE 69326262 T DE69326262 T DE 69326262T DE 69326262 D1 DE69326262 D1 DE 69326262D1
Authority
DE
Germany
Prior art keywords
semiconductor devices
compound semiconductor
compound
devices
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69326262T
Other languages
English (en)
Other versions
DE69326262T2 (de
Inventor
Masahiko Nakanishi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of DE69326262D1 publication Critical patent/DE69326262D1/de
Application granted granted Critical
Publication of DE69326262T2 publication Critical patent/DE69326262T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66522—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with an active layer made of a group 13/15 material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/8252—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using III-V technology
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66234—Bipolar junction transistors [BJT]
    • H01L29/6631—Bipolar junction transistors [BJT] with an active layer made of a group 13/15 material
    • H01L29/66318—Heterojunction transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
    • H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66848—Unipolar field-effect transistors with a Schottky gate, i.e. MESFET
    • H01L29/66856—Unipolar field-effect transistors with a Schottky gate, i.e. MESFET with an active layer made of a group 13/15 material
    • H01L29/66863—Lateral single gate transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66893—Unipolar field-effect transistors with a PN junction gate, i.e. JFET
    • H01L29/66924—Unipolar field-effect transistors with a PN junction gate, i.e. JFET with an active layer made of a group 13/15 material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/737—Hetero-junction transistors
    • H01L29/7371—Vertical transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
    • H01L29/7782—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET
    • H01L29/7783—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET using III-V semiconductor material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H01L29/812—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate
    • H01L29/8128—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate with recessed gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Bipolar Transistors (AREA)
  • Weting (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
DE69326262T 1992-01-09 1993-01-07 Verbindungshalbleiterbauelemente Expired - Lifetime DE69326262T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2210892 1992-01-09

Publications (2)

Publication Number Publication Date
DE69326262D1 true DE69326262D1 (de) 1999-10-14
DE69326262T2 DE69326262T2 (de) 2000-05-11

Family

ID=12073694

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69326262T Expired - Lifetime DE69326262T2 (de) 1992-01-09 1993-01-07 Verbindungshalbleiterbauelemente

Country Status (4)

Country Link
US (2) US5508535A (de)
EP (1) EP0551110B1 (de)
JP (1) JP3101457B2 (de)
DE (1) DE69326262T2 (de)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2550859B2 (ja) * 1993-06-01 1996-11-06 日本電気株式会社 電界効果トランジスタ
EP0690506B1 (de) * 1994-06-29 1999-09-08 Laboratoires D'electronique Philips S.A.S. Verfahren zum Herstellen einer Halbleitervorrichtung mit mindestens zwei feldeffekttransitoren verschiedener Abschnürspannung
US5631477A (en) * 1995-06-02 1997-05-20 Trw Inc. Quaternary collector InAlAs-InGaAlAs heterojunction bipolar transistor
JP3377022B2 (ja) * 1997-01-23 2003-02-17 日本電信電話株式会社 ヘテロ接合型電界効果トランジスタの製造方法
JP3450155B2 (ja) * 1997-06-11 2003-09-22 Ｎｅｃエレクトロニクス株式会社 電界効果トランジスタとその製造方法
US6144048A (en) * 1998-01-13 2000-11-07 Nippon Telegraph And Telephone Corporation Heterojunction field effect transistor and method of fabricating the same
US6087207A (en) * 1998-09-29 2000-07-11 Raytheon Company Method of making pseudomorphic high electron mobility transistors
JP2001044417A (ja) * 1999-07-26 2001-02-16 Fujitsu Ltd 半導体装置
JP2001093913A (ja) * 1999-09-20 2001-04-06 Matsushita Electric Ind Co Ltd 電界効果型トランジスタおよびその製造方法、ならびにバイポーラトランジスタおよびその製造方法
US6586113B1 (en) * 2000-07-19 2003-07-01 Agilent Technologies, Inc. Etching heterojunction interfaces
JP3421306B2 (ja) * 2000-07-19 2003-06-30 富士通カンタムデバイス株式会社 化合物半導体装置
US6376867B1 (en) * 2000-08-03 2002-04-23 Trw Inc. Heterojunction bipolar transistor with reduced thermal resistance
US6525349B2 (en) * 2001-06-18 2003-02-25 Epiworks, Inc. Heterojunction bipolar transistor with tensile graded carbon-doped base layer grown by MOCVD
JP3731569B2 (ja) * 2002-07-24 2006-01-05 住友電気工業株式会社 インジウム含有ウエハの製造方法
GB0413277D0 (en) * 2004-06-15 2004-07-14 Filtronic Plc Pseudomorphic hemt structure compound semiconductor substrate and process for forming a recess therein
JP4284254B2 (ja) * 2004-09-07 2009-06-24 富士通株式会社 電界効果型半導体装置
US8211786B2 (en) * 2008-02-28 2012-07-03 International Business Machines Corporation CMOS structure including non-planar hybrid orientation substrate with planar gate electrodes and method for fabrication
JP5021585B2 (ja) * 2008-08-12 2012-09-12 スタンレー電気株式会社 化合物半導体装置とその製造方法
JP2013131650A (ja) * 2011-12-21 2013-07-04 Fujitsu Ltd 半導体装置及びその製造方法
US9768271B2 (en) * 2013-02-22 2017-09-19 Micron Technology, Inc. Methods, devices, and systems related to forming semiconductor power devices with a handle substrate
JP6022998B2 (ja) * 2013-05-10 2016-11-09 日本電信電話株式会社 半導体装置
WO2015194127A1 (ja) * 2014-06-17 2015-12-23 パナソニックＩｐマネジメント株式会社 半導体装置
JP6589291B2 (ja) * 2015-02-19 2019-10-16 富士通株式会社 化合物半導体装置及びその製造方法
JP6589393B2 (ja) * 2015-06-05 2019-10-16 富士通株式会社 化合物半導体装置及びその製造方法
US11309412B1 (en) * 2017-05-17 2022-04-19 Northrop Grumman Systems Corporation Shifting the pinch-off voltage of an InP high electron mobility transistor with a metal ring

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6037784A (ja) * 1983-08-10 1985-02-27 Matsushita Electric Ind Co Ltd 電界効果型トランジスタ
JPH0797634B2 (ja) * 1985-09-11 1995-10-18 住友電気工業株式会社 電界効果トランジスタとその製造方法
JPS6466573A (en) * 1987-09-07 1989-03-13 Anritsu Corp Apparatus for measuring latch-up strength of ic
JPH0622241B2 (ja) * 1987-11-02 1994-03-23 富士通株式会社 半導体装置及びその製造方法
JP2557430B2 (ja) * 1987-12-22 1996-11-27 住友電気工業株式会社 電界効果トランジスタおよびその製造方法
JPH01262663A (ja) * 1988-04-14 1989-10-19 Fujitsu Ltd 共鳴トンネリングヘテロバイポーラトランジスタ
JPH02148740A (ja) * 1988-11-29 1990-06-07 Fujitsu Ltd 半導体装置及びその製造方法
JP2687519B2 (ja) * 1988-12-06 1997-12-08 日本電気株式会社 半導体装置及びその製造方法
US4939562A (en) * 1989-04-07 1990-07-03 Raytheon Company Heterojunction bipolar transistors and method of manufacture
JP2787589B2 (ja) * 1989-05-10 1998-08-20 富士通株式会社 半導体装置
US5001534A (en) * 1989-07-11 1991-03-19 At&T Bell Laboratories Heterojunction bipolar transistor
JPH03229426A (ja) * 1989-11-29 1991-10-11 Texas Instr Inc <Ti> 集積回路及びその製造方法
JP2646795B2 (ja) * 1990-04-03 1997-08-27 日本電気株式会社 速度変調型電界効果トランジスタ
US5172197A (en) * 1990-04-11 1992-12-15 Hughes Aircraft Company Hemt structure with passivated donor layer
US5150185A (en) * 1990-04-18 1992-09-22 Fujitsu Limited Semiconductor device
JPH0499382A (ja) * 1990-08-17 1992-03-31 Mitsubishi Electric Corp ヘテロバイポーラトランジスタ
JPH04101430A (ja) * 1990-08-20 1992-04-02 Matsushita Electric Ind Co Ltd ヘテロ接合バイポーラトランジスタおよびその製造方法
JP2786327B2 (ja) * 1990-10-25 1998-08-13 三菱電機株式会社 ヘテロ接合電界効果トランジスタ

Also Published As

Publication number Publication date
EP0551110B1 (de) 1999-09-08
JPH05251472A (ja) 1993-09-28
EP0551110A3 (en) 1994-09-07
JP3101457B2 (ja) 2000-10-23
DE69326262T2 (de) 2000-05-11
EP0551110A2 (de) 1993-07-14
US5477066A (en) 1995-12-19
US5508535A (en) 1996-04-16

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