DE69306457D1 - Halbleiterphotokoppler - Google Patents

Halbleiterphotokoppler

Info

Publication number
DE69306457D1
DE69306457D1 DE69306457T DE69306457T DE69306457D1 DE 69306457 D1 DE69306457 D1 DE 69306457D1 DE 69306457 T DE69306457 T DE 69306457T DE 69306457 T DE69306457 T DE 69306457T DE 69306457 D1 DE69306457 D1 DE 69306457D1
Authority
DE
Germany
Prior art keywords
photocoupler
semiconductor
semiconductor photocoupler
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69306457T
Other languages
English (en)
Other versions
DE69306457T2 (de
Inventor
Tetsuro Kato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Electronics Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Publication of DE69306457D1 publication Critical patent/DE69306457D1/de
Application granted granted Critical
Publication of DE69306457T2 publication Critical patent/DE69306457T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
    • H01L31/16—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources
    • H01L31/167—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
DE69306457T 1992-04-17 1993-03-31 Halbleiterphotokoppler Expired - Fee Related DE69306457T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12412492A JP2806146B2 (ja) 1992-04-17 1992-04-17 半導体光結合素子

Publications (2)

Publication Number Publication Date
DE69306457D1 true DE69306457D1 (de) 1997-01-23
DE69306457T2 DE69306457T2 (de) 1997-04-03

Family

ID=14877523

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69306457T Expired - Fee Related DE69306457T2 (de) 1992-04-17 1993-03-31 Halbleiterphotokoppler

Country Status (4)

Country Link
US (1) US5459336A (de)
EP (1) EP0566278B1 (de)
JP (1) JP2806146B2 (de)
DE (1) DE69306457T2 (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SE512449C2 (sv) * 1998-04-24 2000-03-20 Ericsson Telefon Ab L M Anordning och sätt för trådlös dataöverföring
BRPI0517519A (pt) * 2004-10-26 2008-10-14 Technology Res Corp aparelho para controlar um comutador de interconexão conectando uma fonte de alimentação a uma carga, e, circuito para controlar abertura de um comutador de interconexão conectando uma fonte de alimentação e uma carga
US7623329B2 (en) * 2005-01-04 2009-11-24 Technology Research Corporation Leakage current detection and interruption circuit with improved shield
US7751161B2 (en) * 2005-01-04 2010-07-06 Technology Research Corporation Leakage current detection and interruption circuit
US7423854B2 (en) * 2006-07-07 2008-09-09 Technology Research Corporation Interruption circuit with improved shield
US8546818B2 (en) * 2007-06-12 2013-10-01 SemiLEDs Optoelectronics Co., Ltd. Vertical LED with current-guiding structure
US8659857B2 (en) * 2008-07-24 2014-02-25 Technology Reasearch Corporation Leakage current detection and interruption circuit powered by leakage current
CN113725207B (zh) * 2021-08-09 2024-07-05 中国电子科技集团公司第四十四研究所 一种传输增益可调的高精度线性光耦结构及其耦合方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4017880A (en) * 1973-02-12 1977-04-12 Tokyo Shibaura Electric Co., Ltd. Red light emitting gallium phosphide device
JPS5517180A (en) * 1978-07-24 1980-02-06 Handotai Kenkyu Shinkokai Light emitting diode display
DE3713067A1 (de) * 1986-09-30 1988-03-31 Siemens Ag Optoelektronisches koppelelement und verfahren zu dessen herstellung
DE4031290C2 (de) * 1990-10-04 1994-09-08 Telefunken Microelectron Halbleiteranordnung, insbesondere Infrarotdiode und Verfahren zum Herstellen

Also Published As

Publication number Publication date
EP0566278B1 (de) 1996-12-11
EP0566278A1 (de) 1993-10-20
US5459336A (en) 1995-10-17
JP2806146B2 (ja) 1998-09-30
DE69306457T2 (de) 1997-04-03
JPH05299688A (ja) 1993-11-12

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: NEC COMPOUND SEMICONDUCTOR DEVICES, LTD., KAWASAKI

8327 Change in the person/name/address of the patent owner

Owner name: NEC ELECTRONICS CORP., KAWASAKI, KANAGAWA, JP

8339 Ceased/non-payment of the annual fee