DE69403368D1 - Photokopplerapparat - Google Patents

Photokopplerapparat

Info

Publication number
DE69403368D1
DE69403368D1 DE69403368T DE69403368T DE69403368D1 DE 69403368 D1 DE69403368 D1 DE 69403368D1 DE 69403368 T DE69403368 T DE 69403368T DE 69403368 T DE69403368 T DE 69403368T DE 69403368 D1 DE69403368 D1 DE 69403368D1
Authority
DE
Germany
Prior art keywords
photocoupler
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69403368T
Other languages
English (en)
Other versions
DE69403368T2 (de
Inventor
Yoshiaki Aizawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Publication of DE69403368D1 publication Critical patent/DE69403368D1/de
Application granted granted Critical
Publication of DE69403368T2 publication Critical patent/DE69403368T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/78—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled
    • H03K17/785—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled controlling field-effect transistor switches
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
    • H01L31/16—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources
    • H01L31/167—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by at least one potential or surface barrier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/04—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
    • H03F3/08—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only controlled by light
    • H03F3/085—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only controlled by light using opto-couplers between stages
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/78—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled
DE69403368T 1993-03-19 1994-03-18 Photokopplerapparat Expired - Lifetime DE69403368T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5998593A JP2807388B2 (ja) 1993-03-19 1993-03-19 フォトカプラ装置

Publications (2)

Publication Number Publication Date
DE69403368D1 true DE69403368D1 (de) 1997-07-03
DE69403368T2 DE69403368T2 (de) 1998-01-08

Family

ID=13128979

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69403368T Expired - Lifetime DE69403368T2 (de) 1993-03-19 1994-03-18 Photokopplerapparat

Country Status (5)

Country Link
US (1) US5418381A (de)
EP (1) EP0616375B1 (de)
JP (1) JP2807388B2 (de)
KR (1) KR0164638B1 (de)
DE (1) DE69403368T2 (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0879041A (ja) * 1994-08-31 1996-03-22 Oki Electric Ind Co Ltd 光半導体リレーとこれを用いたコントローラ、電力供給装置及び端末装置切換装置
JP2986698B2 (ja) * 1994-12-28 1999-12-06 シャープ株式会社 光結合素子
US5623284A (en) * 1995-04-18 1997-04-22 Elan Microelectronics Corporation Input device controller
US5847593A (en) * 1997-03-25 1998-12-08 Siemens Microelectronics, Inc Voltage discharge circuit for a photovoltaic power source
US6555935B1 (en) * 2000-05-18 2003-04-29 Rockwell Automation Technologies, Inc. Apparatus and method for fast FET switching in a digital output device
JP3680036B2 (ja) * 2002-04-05 2005-08-10 株式会社東芝 半導体回路、及び、フォトカップラー
JP5027680B2 (ja) * 2008-01-18 2012-09-19 パナソニック株式会社 半導体リレーモジュール
EP2365738B1 (de) * 2010-03-11 2016-07-13 Nouveaux établissements Charles MARTIN S.A: Hochspannungsschaltung für die elektrische Stimulation
US20150249450A1 (en) * 2012-03-14 2015-09-03 Mohamed Sirajuddin Bilateral switch
JP5781108B2 (ja) * 2013-02-28 2015-09-16 株式会社東芝 光結合装置
JP7374948B2 (ja) * 2021-03-23 2023-11-07 株式会社東芝 半導体リレー装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4390790A (en) * 1979-08-09 1983-06-28 Theta-J Corporation Solid state optically coupled electrical power switch
US4647794A (en) * 1985-05-22 1987-03-03 Teledyne Industries, Inc. Solid state relay having non overlapping switch closures
JPH0758804B2 (ja) * 1989-05-17 1995-06-21 株式会社東芝 ホトカプラ装置
US5006949A (en) * 1990-04-30 1991-04-09 Teledyne Industries, Inc. Temperature compensated overload trip level solid state relay
US5146100A (en) * 1991-05-21 1992-09-08 Keithley Instruments, Inc. High voltage solid-state switch with current limit

Also Published As

Publication number Publication date
JP2807388B2 (ja) 1998-10-08
EP0616375A3 (de) 1995-01-11
EP0616375B1 (de) 1997-05-28
US5418381A (en) 1995-05-23
KR0164638B1 (ko) 1999-01-15
EP0616375A2 (de) 1994-09-21
KR940022929A (ko) 1994-10-22
JPH06276079A (ja) 1994-09-30
DE69403368T2 (de) 1998-01-08

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8328 Change in the person/name/address of the agent

Representative=s name: KRAMER - BARSKE - SCHMIDTCHEN, 81245 MUENCHEN