DE69229937T2 - Avalanche Diode in einer bipolaren integrierten Schaltung - Google Patents

Avalanche Diode in einer bipolaren integrierten Schaltung

Info

Publication number
DE69229937T2
DE69229937T2 DE69229937T DE69229937T DE69229937T2 DE 69229937 T2 DE69229937 T2 DE 69229937T2 DE 69229937 T DE69229937 T DE 69229937T DE 69229937 T DE69229937 T DE 69229937T DE 69229937 T2 DE69229937 T2 DE 69229937T2
Authority
DE
Germany
Prior art keywords
integrated circuit
avalanche diode
bipolar integrated
bipolar
avalanche
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69229937T
Other languages
English (en)
Other versions
DE69229937D1 (de
Inventor
Jean-Michel Moreau
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SA
Original Assignee
STMicroelectronics SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SA filed Critical STMicroelectronics SA
Application granted granted Critical
Publication of DE69229937D1 publication Critical patent/DE69229937D1/de
Publication of DE69229937T2 publication Critical patent/DE69229937T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/866—Zener diodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
DE69229937T 1991-06-28 1992-06-23 Avalanche Diode in einer bipolaren integrierten Schaltung Expired - Fee Related DE69229937T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9108418A FR2678430B1 (fr) 1991-06-28 1991-06-28 Diode a avalanche dans un circuit integre bipolaire.

Publications (2)

Publication Number Publication Date
DE69229937D1 DE69229937D1 (de) 1999-10-14
DE69229937T2 true DE69229937T2 (de) 2000-01-27

Family

ID=9414739

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69229937T Expired - Fee Related DE69229937T2 (de) 1991-06-28 1992-06-23 Avalanche Diode in einer bipolaren integrierten Schaltung

Country Status (5)

Country Link
US (1) US5298788A (de)
EP (1) EP0521802B1 (de)
JP (1) JP3302403B2 (de)
DE (1) DE69229937T2 (de)
FR (1) FR2678430B1 (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5422508A (en) * 1992-09-21 1995-06-06 Siliconix Incorporated BiCDMOS structure
FR2702308B1 (fr) * 1993-03-01 1995-05-24 Sgs Thomson Microelectronics Diode à avalanche dans un circuit intégré bipolaire.
US5528189A (en) * 1993-12-21 1996-06-18 Texas Instruments Incorporated Noise performance of amplifiers
US5477078A (en) * 1994-02-18 1995-12-19 Analog Devices, Incorporated Integrated circuit (IC) with a two-terminal diode device to protect metal-oxide-metal capacitors from ESD damage
EP0676802B1 (de) * 1994-03-31 1998-12-23 STMicroelectronics S.r.l. Verfahren zur Herstellung eines Halbleiterbauteils mit vergrabenem Übergang
EP1191598B1 (de) 2000-01-18 2007-12-19 Siemens Schweiz AG Verfahren zur Herstellung eines Halbleiter-Photosensors
US7973386B1 (en) * 2007-01-12 2011-07-05 National Semiconductor Corporation ESD protection bipolar device with internal avalanche diode
JP5604901B2 (ja) * 2010-02-18 2014-10-15 株式会社豊田中央研究所 電流増幅素子
US20170179226A1 (en) * 2015-12-18 2017-06-22 Microchip Technology Incorporated Ultrasound t/r isoltation disolator with fast recovery time on soi
JP7129199B2 (ja) * 2018-04-11 2022-09-01 キヤノン株式会社 光検出装置、光検出システム及び移動体

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5574059U (de) * 1978-11-15 1980-05-21
US4319257A (en) * 1980-01-16 1982-03-09 Harris Corporation Low thermal coefficient semiconductor device
US4441114A (en) * 1981-12-22 1984-04-03 International Business Machines Corporation CMOS Subsurface breakdown zener diode
JPS5988871A (ja) * 1982-11-12 1984-05-22 バ−・ブラウン・コ−ポレ−ション 高安定低電圧集積回路表面下降状ダイオ−ド構造体及びその製造方法
US4758872A (en) * 1984-10-25 1988-07-19 Nec Corporation Integrated circuit fabricated in a semiconductor substrate
US4766469A (en) * 1986-01-06 1988-08-23 Siliconix Incorporated Integrated buried zener diode and temperature compensation transistor
US4910160A (en) * 1989-06-06 1990-03-20 National Semiconductor Corporation High voltage complementary NPN/PNP process
US5027165A (en) * 1990-05-22 1991-06-25 Maxim Integrated Products Buried zener diode

Also Published As

Publication number Publication date
US5298788A (en) 1994-03-29
EP0521802A3 (en) 1994-05-11
EP0521802B1 (de) 1999-09-08
DE69229937D1 (de) 1999-10-14
JP3302403B2 (ja) 2002-07-15
EP0521802A2 (de) 1993-01-07
FR2678430A1 (fr) 1992-12-31
FR2678430B1 (fr) 1993-10-29
JPH05206484A (ja) 1993-08-13

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee