DE69225355D1 - Transistor mit einer vorbestimmten Stromverstärkung in einer integrierten Bipolarschaltung - Google Patents
Transistor mit einer vorbestimmten Stromverstärkung in einer integrierten BipolarschaltungInfo
- Publication number
- DE69225355D1 DE69225355D1 DE69225355T DE69225355T DE69225355D1 DE 69225355 D1 DE69225355 D1 DE 69225355D1 DE 69225355 T DE69225355 T DE 69225355T DE 69225355 T DE69225355 T DE 69225355T DE 69225355 D1 DE69225355 D1 DE 69225355D1
- Authority
- DE
- Germany
- Prior art keywords
- transistor
- predetermined current
- current gain
- bipolar circuit
- integrated bipolar
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
- H01L27/0823—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR9106896A FR2677171B1 (fr) | 1991-05-31 | 1991-05-31 | Transistor de gain en courant predetermine dans un circuit integre bipolaire. |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69225355D1 true DE69225355D1 (de) | 1998-06-10 |
DE69225355T2 DE69225355T2 (de) | 1998-11-19 |
Family
ID=9413563
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69225355T Expired - Fee Related DE69225355T2 (de) | 1991-05-31 | 1992-05-26 | Transistor mit einer vorbestimmten Stromverstärkung in einer integrierten Bipolarschaltung |
Country Status (5)
Country | Link |
---|---|
US (1) | US5481132A (de) |
EP (1) | EP0517623B1 (de) |
JP (1) | JP3313398B2 (de) |
DE (1) | DE69225355T2 (de) |
FR (1) | FR2677171B1 (de) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
SE516226C2 (sv) * | 1995-04-10 | 2001-12-03 | Forskarpatent I Linkoeping Ab | Bipolära transistorer med extra bas-kollektor- och bas- emitterstrukturer |
JPH0945702A (ja) * | 1995-05-19 | 1997-02-14 | Toshiba Corp | 半導体装置 |
JPH10270567A (ja) * | 1997-03-21 | 1998-10-09 | Oki Electric Ind Co Ltd | トランジスタ保護素子 |
US6798024B1 (en) * | 1999-07-01 | 2004-09-28 | Intersil Americas Inc. | BiCMOS process with low temperature coefficient resistor (TCRL) |
JP2001060668A (ja) * | 1999-07-01 | 2001-03-06 | Intersil Corp | 抵抗温度係数の小さい抵抗器(TCRL)による改善されたBiCMOSプロセス |
US7064416B2 (en) * | 2001-11-16 | 2006-06-20 | International Business Machines Corporation | Semiconductor device and method having multiple subcollectors formed on a common wafer |
JP4179292B2 (ja) * | 2005-02-21 | 2008-11-12 | サンケン電気株式会社 | 半導体装置 |
DE102005027368A1 (de) * | 2005-06-14 | 2006-12-28 | Atmel Germany Gmbh | Halbleiterschutzstruktur für eine elektrostatische Entladung |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3393349A (en) * | 1964-04-30 | 1968-07-16 | Motorola Inc | Intergrated circuits having isolated islands with a plurality of semiconductor devices in each island |
US3504203A (en) * | 1966-05-19 | 1970-03-31 | Sprague Electric Co | Transistor with compensated depletion-layer capacitance |
DE1764241C3 (de) * | 1968-04-30 | 1978-09-07 | Ibm Deutschland Gmbh, 7000 Stuttgart | Monolithisch integrierte Halbleiterschaltung |
US3573573A (en) * | 1968-12-23 | 1971-04-06 | Ibm | Memory cell with buried load impedances |
US3770519A (en) * | 1970-08-05 | 1973-11-06 | Ibm | Isolation diffusion method for making reduced beta transistor or diodes |
DE2137976C3 (de) * | 1971-07-29 | 1978-08-31 | Ibm Deutschland Gmbh, 7000 Stuttgart | Monolithischer Speicher und Verfahren zur Herstellung |
IN141922B (de) * | 1974-08-19 | 1977-05-07 | Rca Corp | |
US4258379A (en) * | 1978-09-25 | 1981-03-24 | Hitachi, Ltd. | IIL With in and outdiffused emitter pocket |
JPS57106160A (en) * | 1980-12-24 | 1982-07-01 | Hitachi Ltd | Semiconductor integrated circuit device and manufacture thereof |
-
1991
- 1991-05-31 FR FR9106896A patent/FR2677171B1/fr not_active Expired - Fee Related
-
1992
- 1992-05-26 EP EP92420176A patent/EP0517623B1/de not_active Expired - Lifetime
- 1992-05-26 DE DE69225355T patent/DE69225355T2/de not_active Expired - Fee Related
- 1992-05-29 JP JP13868592A patent/JP3313398B2/ja not_active Expired - Fee Related
-
1993
- 1993-11-18 US US08/154,379 patent/US5481132A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JP3313398B2 (ja) | 2002-08-12 |
US5481132A (en) | 1996-01-02 |
EP0517623A2 (de) | 1992-12-09 |
EP0517623A3 (en) | 1994-08-10 |
EP0517623B1 (de) | 1998-05-06 |
JPH05198584A (ja) | 1993-08-06 |
FR2677171B1 (fr) | 1994-01-28 |
FR2677171A1 (fr) | 1992-12-04 |
DE69225355T2 (de) | 1998-11-19 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |