DE69231243D1 - Statischer RAM-Speicher in einer integrierten Schaltung - Google Patents
Statischer RAM-Speicher in einer integrierten SchaltungInfo
- Publication number
- DE69231243D1 DE69231243D1 DE69231243T DE69231243T DE69231243D1 DE 69231243 D1 DE69231243 D1 DE 69231243D1 DE 69231243 T DE69231243 T DE 69231243T DE 69231243 T DE69231243 T DE 69231243T DE 69231243 D1 DE69231243 D1 DE 69231243D1
- Authority
- DE
- Germany
- Prior art keywords
- integrated circuit
- static ram
- static
- ram
- integrated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 230000003068 static effect Effects 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B10/00—Static random access memory [SRAM] devices
- H10B10/12—Static random access memory [SRAM] devices comprising a MOSFET load element
- H10B10/125—Static random access memory [SRAM] devices comprising a MOSFET load element the MOSFET being a thin film transistor [TFT]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
- Y10S257/903—FET configuration adapted for use as static memory cell
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
- Y10S257/903—FET configuration adapted for use as static memory cell
- Y10S257/904—FET configuration adapted for use as static memory cell with passive components,, e.g. polysilicon resistors
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US81318891A | 1991-12-30 | 1991-12-30 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69231243D1 true DE69231243D1 (de) | 2000-08-17 |
DE69231243T2 DE69231243T2 (de) | 2000-11-23 |
Family
ID=25211707
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69231243T Expired - Fee Related DE69231243T2 (de) | 1991-12-30 | 1992-12-10 | Statischer RAM-Speicher in einer integrierten Schaltung |
Country Status (6)
Country | Link |
---|---|
US (1) | US5488248A (de) |
EP (1) | EP0550175B1 (de) |
JP (1) | JP3063875B2 (de) |
KR (1) | KR100282989B1 (de) |
DE (1) | DE69231243T2 (de) |
TW (1) | TW215975B (de) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07235645A (ja) * | 1993-12-29 | 1995-09-05 | Mitsubishi Electric Corp | スタティック型半導体記憶装置およびその製造方法 |
US5721445A (en) * | 1995-03-02 | 1998-02-24 | Lucent Technologies Inc. | Semiconductor device with increased parasitic emitter resistance and improved latch-up immunity |
JP2001068564A (ja) | 1999-08-30 | 2001-03-16 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
JP2001203347A (ja) | 2000-01-18 | 2001-07-27 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
US9041117B2 (en) | 2012-07-31 | 2015-05-26 | Taiwan Semiconductor Manufacturing Company, Ltd. | SRAM cell connection structure |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4212083A (en) * | 1976-05-28 | 1980-07-08 | Texas Instruments Incorporated | MOS Integrated with implanted resistor elements |
JPS55132055A (en) * | 1979-03-30 | 1980-10-14 | Nec Corp | Mos integrated circuit |
JPS5868962A (ja) * | 1981-10-20 | 1983-04-25 | Fujitsu Ltd | 半導体記憶装置 |
EP0190070B1 (de) * | 1985-01-22 | 1992-08-26 | Fairchild Semiconductor Corporation | Halbleiterstruktur |
JPS61222254A (ja) * | 1985-03-28 | 1986-10-02 | Toshiba Corp | 半導体記憶装置 |
JP2821602B2 (ja) * | 1988-10-31 | 1998-11-05 | ソニー株式会社 | 半導体装置とその製造方法 |
US4982250A (en) * | 1989-01-04 | 1991-01-01 | Motorola, Inc. | Mosture barrier for floating gate transistors |
JP2927463B2 (ja) * | 1989-09-28 | 1999-07-28 | 株式会社日立製作所 | 半導体記憶装置 |
-
1992
- 1992-12-09 TW TW081109876A patent/TW215975B/zh active
- 1992-12-10 EP EP92311253A patent/EP0550175B1/de not_active Expired - Lifetime
- 1992-12-10 DE DE69231243T patent/DE69231243T2/de not_active Expired - Fee Related
- 1992-12-23 KR KR1019920025258A patent/KR100282989B1/ko not_active IP Right Cessation
-
1993
- 1993-01-04 JP JP5014404A patent/JP3063875B2/ja not_active Expired - Lifetime
-
1995
- 1995-05-19 US US08/446,091 patent/US5488248A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
KR930014994A (ko) | 1993-07-23 |
EP0550175B1 (de) | 2000-07-12 |
JPH0685208A (ja) | 1994-03-25 |
EP0550175A1 (de) | 1993-07-07 |
JP3063875B2 (ja) | 2000-07-12 |
TW215975B (de) | 1993-11-11 |
KR100282989B1 (ko) | 2001-04-02 |
DE69231243T2 (de) | 2000-11-23 |
US5488248A (en) | 1996-01-30 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE69117331D1 (de) | Elektronischer Tabellenkalkulator | |
FI924811A0 (fi) | Elektroniskt informationsanskaffningssystem | |
DE69123407D1 (de) | Elektronisches Gerät | |
DE69123887D1 (de) | Integrierte Schaltungskarte | |
DE3581254D1 (de) | Schutzvorrichtung in einer integrierten schaltung. | |
DE69117553D1 (de) | Ausgangsschaltung | |
DE69225508D1 (de) | Ausgangsschaltung | |
DE69119152D1 (de) | Schaltungsanordnung | |
DE69206651D1 (de) | Schaltungsanordnung | |
DE69213986D1 (de) | Schaltungsanordnung | |
DE69124896D1 (de) | Elektronischer Schaltkreis | |
DE69122463D1 (de) | Integrierte Schaltkreise | |
DE69229315D1 (de) | Ausgangs-Schaltkreis | |
DE69216663D1 (de) | Schaltkreis | |
DE69120160D1 (de) | Integrierte Schaltung mit einer Eingabe-Pufferschaltung | |
DE69029468D1 (de) | Integrierte Schaltungsanordnung | |
DE69220456D1 (de) | Schaltungsanordnung | |
DE69231243D1 (de) | Statischer RAM-Speicher in einer integrierten Schaltung | |
DE69215184D1 (de) | Integrierte Schaltung | |
DE59308485D1 (de) | Integrierte Schaltungsanordnung | |
DE69232543D1 (de) | Statischer RAM-Speicher mit abgeglichenem Widerstand in einer integrierten Schaltung | |
DE69219687D1 (de) | Optoelektronische integrierte Schaltung | |
DE59309930D1 (de) | Integrierte Schaltungsanordnung | |
DK0489194T3 (da) | Kredsløbsarrangement | |
DE59010443D1 (de) | Integrierte Schaltungsanordnung |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |