DE69231243D1 - Statischer RAM-Speicher in einer integrierten Schaltung - Google Patents

Statischer RAM-Speicher in einer integrierten Schaltung

Info

Publication number
DE69231243D1
DE69231243D1 DE69231243T DE69231243T DE69231243D1 DE 69231243 D1 DE69231243 D1 DE 69231243D1 DE 69231243 T DE69231243 T DE 69231243T DE 69231243 T DE69231243 T DE 69231243T DE 69231243 D1 DE69231243 D1 DE 69231243D1
Authority
DE
Germany
Prior art keywords
integrated circuit
static ram
static
ram
integrated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69231243T
Other languages
English (en)
Other versions
DE69231243T2 (de
Inventor
Kuo-Hua Lee
Janmye Sung
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
AT&T Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by AT&T Corp filed Critical AT&T Corp
Publication of DE69231243D1 publication Critical patent/DE69231243D1/de
Application granted granted Critical
Publication of DE69231243T2 publication Critical patent/DE69231243T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H10B10/12—Static random access memory [SRAM] devices comprising a MOSFET load element
    • H10B10/125—Static random access memory [SRAM] devices comprising a MOSFET load element the MOSFET being a thin film transistor [TFT]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/903—FET configuration adapted for use as static memory cell
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/903—FET configuration adapted for use as static memory cell
    • Y10S257/904—FET configuration adapted for use as static memory cell with passive components,, e.g. polysilicon resistors
DE69231243T 1991-12-30 1992-12-10 Statischer RAM-Speicher in einer integrierten Schaltung Expired - Fee Related DE69231243T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US81318891A 1991-12-30 1991-12-30

Publications (2)

Publication Number Publication Date
DE69231243D1 true DE69231243D1 (de) 2000-08-17
DE69231243T2 DE69231243T2 (de) 2000-11-23

Family

ID=25211707

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69231243T Expired - Fee Related DE69231243T2 (de) 1991-12-30 1992-12-10 Statischer RAM-Speicher in einer integrierten Schaltung

Country Status (6)

Country Link
US (1) US5488248A (de)
EP (1) EP0550175B1 (de)
JP (1) JP3063875B2 (de)
KR (1) KR100282989B1 (de)
DE (1) DE69231243T2 (de)
TW (1) TW215975B (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07235645A (ja) * 1993-12-29 1995-09-05 Mitsubishi Electric Corp スタティック型半導体記憶装置およびその製造方法
US5721445A (en) * 1995-03-02 1998-02-24 Lucent Technologies Inc. Semiconductor device with increased parasitic emitter resistance and improved latch-up immunity
JP2001068564A (ja) 1999-08-30 2001-03-16 Mitsubishi Electric Corp 半導体装置およびその製造方法
JP2001203347A (ja) 2000-01-18 2001-07-27 Mitsubishi Electric Corp 半導体装置およびその製造方法
US9041117B2 (en) * 2012-07-31 2015-05-26 Taiwan Semiconductor Manufacturing Company, Ltd. SRAM cell connection structure

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4212083A (en) * 1976-05-28 1980-07-08 Texas Instruments Incorporated MOS Integrated with implanted resistor elements
JPS55132055A (en) * 1979-03-30 1980-10-14 Nec Corp Mos integrated circuit
JPS5868962A (ja) * 1981-10-20 1983-04-25 Fujitsu Ltd 半導体記憶装置
EP0490877A3 (en) * 1985-01-22 1992-08-26 Fairchild Semiconductor Corporation Interconnection for an integrated circuit
JPS61222254A (ja) * 1985-03-28 1986-10-02 Toshiba Corp 半導体記憶装置
JP2821602B2 (ja) * 1988-10-31 1998-11-05 ソニー株式会社 半導体装置とその製造方法
US4982250A (en) * 1989-01-04 1991-01-01 Motorola, Inc. Mosture barrier for floating gate transistors
JP2927463B2 (ja) * 1989-09-28 1999-07-28 株式会社日立製作所 半導体記憶装置

Also Published As

Publication number Publication date
KR930014994A (ko) 1993-07-23
EP0550175A1 (de) 1993-07-07
US5488248A (en) 1996-01-30
TW215975B (de) 1993-11-11
KR100282989B1 (ko) 2001-04-02
DE69231243T2 (de) 2000-11-23
JP3063875B2 (ja) 2000-07-12
EP0550175B1 (de) 2000-07-12
JPH0685208A (ja) 1994-03-25

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee