DE69428378D1 - Halbleiteranordnung mit einer Durchgangsleitung - Google Patents

Halbleiteranordnung mit einer Durchgangsleitung

Info

Publication number
DE69428378D1
DE69428378D1 DE69428378T DE69428378T DE69428378D1 DE 69428378 D1 DE69428378 D1 DE 69428378D1 DE 69428378 T DE69428378 T DE 69428378T DE 69428378 T DE69428378 T DE 69428378T DE 69428378 D1 DE69428378 D1 DE 69428378D1
Authority
DE
Germany
Prior art keywords
line
semiconductor arrangement
semiconductor
arrangement
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69428378T
Other languages
English (en)
Other versions
DE69428378T2 (de
Inventor
Katsuya Kosaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of DE69428378D1 publication Critical patent/DE69428378D1/de
Application granted granted Critical
Publication of DE69428378T2 publication Critical patent/DE69428378T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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DE69428378T 1993-06-24 1994-06-13 Halbleiteranordnung mit einer Durchgangsleitung Expired - Fee Related DE69428378T2 (de)

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DE69712562T2 (de) * 1996-02-28 2002-12-19 Koninkl Philips Electronics Nv Halbleiteranordnung mit einem auf einen Träger gelöteten Chip mit Durchgangsleitungen und Herstellungsverfahren dafür
US5825092A (en) * 1996-05-20 1998-10-20 Harris Corporation Integrated circuit with an air bridge having a lid
US5949144A (en) * 1996-05-20 1999-09-07 Harris Corporation Pre-bond cavity air bridge
JP3189691B2 (ja) * 1996-07-10 2001-07-16 株式会社村田製作所 高周波半導体デバイス
JP3724110B2 (ja) 1997-04-24 2005-12-07 三菱電機株式会社 半導体装置の製造方法
US6239033B1 (en) * 1998-05-28 2001-05-29 Sony Corporation Manufacturing method of semiconductor device
JP3810204B2 (ja) * 1998-03-19 2006-08-16 三菱電機株式会社 半導体装置の製造方法および半導体装置
JP3414696B2 (ja) * 2000-05-12 2003-06-09 日本電気株式会社 半導体装置のキャリア基板の電極構造
US7042103B2 (en) * 2002-12-30 2006-05-09 Motorola, Inc. Low stress semiconductor die attach
US7466012B2 (en) 2004-09-13 2008-12-16 International Rectifier Corporation Power semiconductor package
DE102009044086A1 (de) 2009-09-23 2011-03-24 United Monolithic Semiconductors Gmbh Verfahren zur Herstellung eines elektronischen Bauteils und nach diesem Verfahren hergestelltes elektronisches Bauteil
JP5663886B2 (ja) * 2010-02-08 2015-02-04 三菱電機株式会社 半導体装置の製造方法
JP5621334B2 (ja) * 2010-06-10 2014-11-12 富士電機株式会社 半導体装置および半導体装置の製造方法
EP2740818B1 (de) * 2012-12-05 2016-03-30 ATOTECH Deutschland GmbH Verfahren zur herstellung von drahtbondbaren und lötbaren oberflächen auf edelmetallelektroden
DE102013219642A1 (de) 2013-09-27 2015-04-02 Siemens Aktiengesellschaft Verfahren zum Diffusionslöten unter Ausbildung einer Diffusionszone als Lötverbindung und elektronische Baugruppe mit einer solchen Lötverbindung
JP5731620B2 (ja) 2013-11-12 2015-06-10 株式会社東海理化電機製作所 スイッチの節度機構
JP6277693B2 (ja) 2013-11-29 2018-02-14 三菱電機株式会社 半導体装置
JP6173994B2 (ja) * 2014-10-16 2017-08-02 ウシオオプトセミコンダクター株式会社 光半導体装置
US10861792B2 (en) * 2019-03-25 2020-12-08 Raytheon Company Patterned wafer solder diffusion barrier

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US4268849A (en) * 1978-11-03 1981-05-19 National Semiconductor Corporation Raised bonding pad
JPH01162735A (ja) * 1987-12-18 1989-06-27 Nkk Corp 合金の製造方法
JPH02162735A (ja) * 1988-12-15 1990-06-22 Fujitsu Ltd 半導体装置及びその製造方法
US5056216A (en) * 1990-01-26 1991-10-15 Sri International Method of forming a plurality of solder connections

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EP0810658B1 (de) 2001-09-19
EP0631313B1 (de) 1999-09-15
DE69420620D1 (de) 1999-10-21
EP0631313A1 (de) 1994-12-28
JPH0722435A (ja) 1995-01-24
JP3350152B2 (ja) 2002-11-25
EP0810658A2 (de) 1997-12-03
DE69420620T2 (de) 2000-04-27
DE69428378T2 (de) 2002-07-04
EP0810658A3 (de) 1998-01-28
US5483092A (en) 1996-01-09

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