DE69428378D1 - Semiconductor arrangement with a through line - Google Patents

Semiconductor arrangement with a through line

Info

Publication number
DE69428378D1
DE69428378D1 DE69428378T DE69428378T DE69428378D1 DE 69428378 D1 DE69428378 D1 DE 69428378D1 DE 69428378 T DE69428378 T DE 69428378T DE 69428378 T DE69428378 T DE 69428378T DE 69428378 D1 DE69428378 D1 DE 69428378D1
Authority
DE
Germany
Prior art keywords
line
semiconductor arrangement
semiconductor
arrangement
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69428378T
Other languages
German (de)
Other versions
DE69428378T2 (en
Inventor
Katsuya Kosaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Application granted granted Critical
Publication of DE69428378D1 publication Critical patent/DE69428378D1/en
Publication of DE69428378T2 publication Critical patent/DE69428378T2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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DE69428378T 1993-06-24 1994-06-13 Semiconductor arrangement with a through line Expired - Fee Related DE69428378T2 (en)

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JP15311193A JP3350152B2 (en) 1993-06-24 1993-06-24 Semiconductor device and method of manufacturing the same

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US5949144A (en) * 1996-05-20 1999-09-07 Harris Corporation Pre-bond cavity air bridge
US5825092A (en) * 1996-05-20 1998-10-20 Harris Corporation Integrated circuit with an air bridge having a lid
JP3189691B2 (en) * 1996-07-10 2001-07-16 株式会社村田製作所 High frequency semiconductor devices
JP3724110B2 (en) 1997-04-24 2005-12-07 三菱電機株式会社 Manufacturing method of semiconductor device
US6239033B1 (en) * 1998-05-28 2001-05-29 Sony Corporation Manufacturing method of semiconductor device
JP3810204B2 (en) * 1998-03-19 2006-08-16 三菱電機株式会社 Semiconductor device manufacturing method and semiconductor device
JP3414696B2 (en) * 2000-05-12 2003-06-09 日本電気株式会社 Electrode structure of carrier substrate of semiconductor device
US7042103B2 (en) * 2002-12-30 2006-05-09 Motorola, Inc. Low stress semiconductor die attach
WO2006031886A2 (en) 2004-09-13 2006-03-23 International Rectifier Corporation Power semiconductor package
DE102009044086A1 (en) 2009-09-23 2011-03-24 United Monolithic Semiconductors Gmbh Method for producing an electronic component and electronic component produced by this method
JP5663886B2 (en) * 2010-02-08 2015-02-04 三菱電機株式会社 Manufacturing method of semiconductor device
JP5621334B2 (en) * 2010-06-10 2014-11-12 富士電機株式会社 Semiconductor device and manufacturing method of semiconductor device
EP2740818B1 (en) * 2012-12-05 2016-03-30 ATOTECH Deutschland GmbH Method for manufacture of wire bondable and solderable surfaces on noble metal electrodes
DE102013219642A1 (en) 2013-09-27 2015-04-02 Siemens Aktiengesellschaft Process for diffusion soldering to form a diffusion zone as a solder joint and electronic assembly with such a solder joint
JP5731620B2 (en) 2013-11-12 2015-06-10 株式会社東海理化電機製作所 Moderation mechanism of switch
JP6277693B2 (en) 2013-11-29 2018-02-14 三菱電機株式会社 Semiconductor device
JP6173994B2 (en) * 2014-10-16 2017-08-02 ウシオオプトセミコンダクター株式会社 Optical semiconductor device
US10861792B2 (en) * 2019-03-25 2020-12-08 Raytheon Company Patterned wafer solder diffusion barrier

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JPH01162735A (en) * 1987-12-18 1989-06-27 Nkk Corp Manufacture of alloy
JPH02162735A (en) * 1988-12-15 1990-06-22 Fujitsu Ltd Semiconductor device and manufacture thereof
US5056216A (en) * 1990-01-26 1991-10-15 Sri International Method of forming a plurality of solder connections

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JPH0722435A (en) 1995-01-24
EP0810658B1 (en) 2001-09-19
DE69428378T2 (en) 2002-07-04
EP0810658A2 (en) 1997-12-03
JP3350152B2 (en) 2002-11-25
EP0631313B1 (en) 1999-09-15
US5483092A (en) 1996-01-09
DE69420620D1 (en) 1999-10-21
EP0631313A1 (en) 1994-12-28
EP0810658A3 (en) 1998-01-28
DE69420620T2 (en) 2000-04-27

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