DE69620507T2 - Halbleiteranordnung mit einer Schutzvorrichtung - Google Patents

Halbleiteranordnung mit einer Schutzvorrichtung

Info

Publication number
DE69620507T2
DE69620507T2 DE69620507T DE69620507T DE69620507T2 DE 69620507 T2 DE69620507 T2 DE 69620507T2 DE 69620507 T DE69620507 T DE 69620507T DE 69620507 T DE69620507 T DE 69620507T DE 69620507 T2 DE69620507 T2 DE 69620507T2
Authority
DE
Germany
Prior art keywords
protective device
semiconductor arrangement
semiconductor
arrangement
protective
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69620507T
Other languages
English (en)
Other versions
DE69620507D1 (de
Inventor
E Ajith Amerasekera
Charvaka Duvvury
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Inc
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Publication of DE69620507D1 publication Critical patent/DE69620507D1/de
Application granted granted Critical
Publication of DE69620507T2 publication Critical patent/DE69620507T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0259—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using bipolar transistors as protective elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
DE69620507T 1995-07-11 1996-07-11 Halbleiteranordnung mit einer Schutzvorrichtung Expired - Lifetime DE69620507T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US105495P 1995-07-11 1995-07-11

Publications (2)

Publication Number Publication Date
DE69620507D1 DE69620507D1 (de) 2002-05-16
DE69620507T2 true DE69620507T2 (de) 2002-10-17

Family

ID=21694163

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69620507T Expired - Lifetime DE69620507T2 (de) 1995-07-11 1996-07-11 Halbleiteranordnung mit einer Schutzvorrichtung

Country Status (5)

Country Link
EP (1) EP0753892B1 (de)
JP (1) JPH09107074A (de)
KR (1) KR100496362B1 (de)
DE (1) DE69620507T2 (de)
TW (1) TW383483B (de)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6028758A (en) * 1998-01-16 2000-02-22 Vantis Corporation Electrostatic discharge (ESD) protection for a 5.0 volt compatible input/output (I/O) in a 2.5 volt semiconductor process
ATE456861T1 (de) 1999-06-01 2010-02-15 Imec Esd-schutz-bauteil für mittlere triggerspannung
DE10022366A1 (de) * 2000-05-08 2001-11-29 Micronas Gmbh ESD-Schutzstruktur
US6396107B1 (en) * 2000-11-20 2002-05-28 International Business Machines Corporation Trench-defined silicon germanium ESD diode network
US6690065B2 (en) * 2000-12-28 2004-02-10 Industrial Technology Research Institute Substrate-biased silicon diode for electrostatic discharge protection and fabrication method
US7332748B2 (en) 2002-12-04 2008-02-19 Nec Electronics Corporation Electro-static discharge protection device
US6826025B2 (en) 2002-05-20 2004-11-30 International Business Machines Corporation Method and apparatus for providing ESD protection and/or noise reduction in an integrated circuit
JP4290468B2 (ja) 2002-05-24 2009-07-08 Ｎｅｃエレクトロニクス株式会社 静電気放電保護素子
JP4504664B2 (ja) * 2002-12-04 2010-07-14 ルネサスエレクトロニクス株式会社 静電気放電保護素子及び静電気放電保護回路
DE10325718B4 (de) 2003-06-06 2006-07-06 Micronas Gmbh Halbleitersensor mit einem FET und Verfahren zum Ansteuern eines solchen Halbleitersensors
CN100339988C (zh) * 2004-02-26 2007-09-26 威盛电子股份有限公司 结构重复的静电放电保护电路
DE102005019305B4 (de) 2005-04-26 2010-04-22 Infineon Technologies Ag ESD-Schutzstruktur mit Diodenreihenschaltung und Halbleiterschaltung mit derselben
DE102006037500B3 (de) 2006-08-10 2008-04-03 Infineon Technologies Ag ESD-Schutzschaltung mit geringem Leckstrom und Verfahren zum ESD-Schutz
KR100942956B1 (ko) 2008-02-12 2010-02-17 주식회사 하이닉스반도체 에스씨알 회로를 이용한 정전기 방전 장치
DE102008037551B4 (de) 2008-11-14 2013-04-18 Lear Corporation Gmbh Vorrichtung zum Betreiben von Leuchtdiodenketten
KR101524408B1 (ko) * 2014-05-30 2015-06-01 단국대학교 산학협력단 정전기 방전 보호소자
US9929142B2 (en) 2015-03-04 2018-03-27 Analog Devices, Inc. Apparatus and methods for overvoltage switches with active leakage current compensation

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58122766A (ja) * 1982-01-14 1983-07-21 Toshiba Corp 半導体装置
JP2645142B2 (ja) * 1989-06-19 1997-08-25 株式会社東芝 ダイナミック型ランダムアクセスメモリ
JP3375659B2 (ja) * 1991-03-28 2003-02-10 テキサス インスツルメンツ インコーポレイテツド 静電放電保護回路の形成方法
US5272371A (en) * 1991-11-19 1993-12-21 Sgs-Thomson Microelectronics, Inc. Electrostatic discharge protection structure

Also Published As

Publication number Publication date
EP0753892B1 (de) 2002-04-10
KR100496362B1 (ko) 2006-05-02
TW383483B (en) 2000-03-01
DE69620507D1 (de) 2002-05-16
EP0753892A1 (de) 1997-01-15
JPH09107074A (ja) 1997-04-22
KR980012419A (ko) 1998-04-30

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