DE69620149D1 - Halbleiteranordnung - Google Patents

Halbleiteranordnung

Info

Publication number
DE69620149D1
DE69620149D1 DE69620149T DE69620149T DE69620149D1 DE 69620149 D1 DE69620149 D1 DE 69620149D1 DE 69620149 T DE69620149 T DE 69620149T DE 69620149 T DE69620149 T DE 69620149T DE 69620149 D1 DE69620149 D1 DE 69620149D1
Authority
DE
Germany
Prior art keywords
semiconductor device
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69620149T
Other languages
English (en)
Other versions
DE69620149T2 (de
Inventor
Tomohide Terashima
Kazuhiro Shimizu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Application granted granted Critical
Publication of DE69620149D1 publication Critical patent/DE69620149D1/de
Publication of DE69620149T2 publication Critical patent/DE69620149T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7816—Lateral DMOS transistors, i.e. LDMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
    • H01L27/0629—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with diodes, or resistors, or capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
    • H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
    • H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
    • H01L29/063—Reduced surface field [RESURF] pn-junction structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0843—Source or drain regions of field-effect devices
    • H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
    • H01L29/0852—Source or drain regions of field-effect devices of field-effect transistors with insulated gate of DMOS transistors
    • H01L29/0873—Drain regions
    • H01L29/0878—Impurity concentration or distribution
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/90—MOSFET type gate sidewall insulating spacer
DE69620149T 1996-04-15 1996-12-13 Halbleiteranordnung Expired - Lifetime DE69620149T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP09224096A JP3917211B2 (ja) 1996-04-15 1996-04-15 半導体装置

Publications (2)

Publication Number Publication Date
DE69620149D1 true DE69620149D1 (de) 2002-05-02
DE69620149T2 DE69620149T2 (de) 2002-10-02

Family

ID=14048919

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69620149T Expired - Lifetime DE69620149T2 (de) 1996-04-15 1996-12-13 Halbleiteranordnung

Country Status (5)

Country Link
US (1) US5894156A (de)
EP (1) EP0802568B1 (de)
JP (1) JP3917211B2 (de)
KR (1) KR100210213B1 (de)
DE (1) DE69620149T2 (de)

Families Citing this family (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7370114B1 (en) * 1998-09-11 2008-05-06 Lv Partners, L.P. Software downloading using a television broadcast channel
KR100534601B1 (ko) * 1999-08-14 2005-12-07 한국전자통신연구원 제조 공정과 특성 제어가 용이한 전력 집적회로 구조
KR100357198B1 (ko) * 2000-12-29 2002-10-19 주식회사 하이닉스반도체 반도체 고전압 소자의 격리영역 및 그 형성방법
US6448625B1 (en) * 2001-03-16 2002-09-10 Semiconductor Components Industries Llc High voltage metal oxide device with enhanced well region
JP4326835B2 (ja) * 2003-05-20 2009-09-09 三菱電機株式会社 半導体装置、半導体装置の製造方法及び半導体装置の製造プロセス評価方法
JP4654574B2 (ja) 2003-10-20 2011-03-23 トヨタ自動車株式会社 半導体装置
JP4593126B2 (ja) * 2004-02-18 2010-12-08 三菱電機株式会社 半導体装置
JP4667756B2 (ja) * 2004-03-03 2011-04-13 三菱電機株式会社 半導体装置
JP4620437B2 (ja) * 2004-12-02 2011-01-26 三菱電機株式会社 半導体装置
US20060220168A1 (en) * 2005-03-08 2006-10-05 Monolithic Power Systems, Inc. Shielding high voltage integrated circuits
JP4863665B2 (ja) * 2005-07-15 2012-01-25 三菱電機株式会社 半導体装置およびその製造方法
JP4832841B2 (ja) * 2005-09-22 2011-12-07 三菱電機株式会社 半導体装置
JP5092174B2 (ja) * 2007-04-12 2012-12-05 三菱電機株式会社 半導体装置
JP4797203B2 (ja) * 2008-12-17 2011-10-19 三菱電機株式会社 半導体装置
JP5293831B2 (ja) 2009-09-29 2013-09-18 富士電機株式会社 高耐圧半導体装置および駆動回路
US8546889B2 (en) 2010-06-04 2013-10-01 Fuji Electric Co., Ltd. Semiconductor device and driving circuit
US8618627B2 (en) * 2010-06-24 2013-12-31 Fairchild Semiconductor Corporation Shielded level shift transistor
JP5496826B2 (ja) * 2010-08-25 2014-05-21 新電元工業株式会社 半導体装置及び半導体装置の製造方法
JP5191514B2 (ja) * 2010-09-08 2013-05-08 三菱電機株式会社 半導体装置
CN103797572B (zh) 2011-09-16 2016-06-22 富士电机株式会社 高耐压半导体装置
CN103875069B (zh) * 2011-11-14 2018-01-16 富士电机株式会社 高耐压半导体装置
JP6009341B2 (ja) * 2012-12-13 2016-10-19 ルネサスエレクトロニクス株式会社 半導体装置
JP6132539B2 (ja) * 2012-12-13 2017-05-24 ルネサスエレクトロニクス株式会社 半導体装置
JP6134219B2 (ja) * 2013-07-08 2017-05-24 ルネサスエレクトロニクス株式会社 半導体装置
WO2015029456A1 (ja) 2013-09-02 2015-03-05 富士電機株式会社 半導体装置
JP6008054B2 (ja) 2013-10-07 2016-10-19 富士電機株式会社 半導体装置
JP6237901B2 (ja) 2014-07-02 2017-11-29 富士電機株式会社 半導体集積回路装置
JP2017045966A (ja) 2015-08-28 2017-03-02 ルネサスエレクトロニクス株式会社 半導体装置
WO2017086069A1 (ja) 2015-11-19 2017-05-26 富士電機株式会社 半導体装置
JP6690336B2 (ja) 2016-03-18 2020-04-28 富士電機株式会社 半導体装置
DE112016007213B4 (de) 2016-09-13 2022-05-25 Mitsubishi Electric Corporation Halbleitervorrichtung
KR102227666B1 (ko) 2017-05-31 2021-03-12 주식회사 키 파운드리 고전압 반도체 소자
JP6414861B2 (ja) * 2017-09-12 2018-10-31 ルネサスエレクトロニクス株式会社 半導体装置
JP6996247B2 (ja) 2017-11-17 2022-01-17 富士電機株式会社 半導体集積回路装置
US11562995B2 (en) 2019-04-11 2023-01-24 Fuji Electric Co., Ltd. Semiconductor integrated circuit
JP7407590B2 (ja) 2019-12-25 2024-01-04 三菱電機株式会社 半導体装置および集積回路
JP7210490B2 (ja) 2020-01-17 2023-01-23 三菱電機株式会社 半導体装置
JP2023108349A (ja) 2022-01-25 2023-08-04 サンケン電気株式会社 半導体装置

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA1131801A (en) * 1978-01-18 1982-09-14 Johannes A. Appels Semiconductor device
DE3029553A1 (de) * 1980-08-04 1982-03-11 Siemens AG, 1000 Berlin und 8000 München Transistoranordnung mit hoher kollektor-emitter-durchbruchsspannung
US4868921A (en) * 1986-09-05 1989-09-19 General Electric Company High voltage integrated circuit devices electrically isolated from an integrated circuit substrate
JPS63164362A (ja) * 1986-12-26 1988-07-07 Toshiba Corp 半導体装置
FR2649828B1 (fr) * 1989-07-17 1991-10-31 Sgs Thomson Microelectronics Circuit integre vdmos/logique comprenant un transistor vertical deplete et une diode zener
US5306652A (en) * 1991-12-30 1994-04-26 Texas Instruments Incorporated Lateral double diffused insulated gate field effect transistor fabrication process
US5446300A (en) * 1992-11-04 1995-08-29 North American Philips Corporation Semiconductor device configuration with multiple HV-LDMOS transistors and a floating well circuit
US5548147A (en) * 1994-04-08 1996-08-20 Texas Instruments Incorporated Extended drain resurf lateral DMOS devices

Also Published As

Publication number Publication date
EP0802568A1 (de) 1997-10-22
DE69620149T2 (de) 2002-10-02
EP0802568B1 (de) 2002-03-27
US5894156A (en) 1999-04-13
KR100210213B1 (ko) 1999-07-15
JPH09283716A (ja) 1997-10-31
KR970072395A (ko) 1997-11-07
JP3917211B2 (ja) 2007-05-23

Similar Documents

Publication Publication Date Title
DE69620149D1 (de) Halbleiteranordnung
DE69809694D1 (de) Halbleiteranordnung
DE69637769D1 (de) Halbleitervorrichtung
DE69738008D1 (de) Halbleiterbauelement
DE69739242D1 (de) Halbleitervorrichtung
DE69935182D1 (de) Halbleiteranordnung
DE69727373D1 (de) Halbleitervorrichtung
DE19823069B8 (de) Halbleiterbauelement
DE69637698D1 (de) Halbleitervorrichtung
DE69912565D1 (de) Halbleiteranordnung
DE69637809D1 (de) Halbleiteranordnung
DE59508581D1 (de) Halbleiterbauelement
DE69637939D1 (de) Halbleiteranordnung
DE69617391T2 (de) Halbleiterspeicheranordnung
DE69731015D1 (de) Halbleiterspeicheranordnung
DE69923374D1 (de) Halbleiteranordnung
DE69737320D1 (de) Halbleitervorrichtung
DE69522789T2 (de) Halbleitervorrichtung
DE69501381D1 (de) Halbleitergerät
DE69513207D1 (de) Halbleitervorrichtung
DE69622292D1 (de) Halbleiteranordnung
DE69721210D1 (de) Halbleiterspeicheranordnung
DE69728312D1 (de) Halbleiterspeicheranordnung
DE69710014T2 (de) Halbleiteranordnung
DE69728850D1 (de) Halbleiteranordnung

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)