IT1255865B - Disposizione a semiconduttore - Google Patents

Disposizione a semiconduttore

Info

Publication number
IT1255865B
IT1255865B ITMI922354A ITMI922354A IT1255865B IT 1255865 B IT1255865 B IT 1255865B IT MI922354 A ITMI922354 A IT MI922354A IT MI922354 A ITMI922354 A IT MI922354A IT 1255865 B IT1255865 B IT 1255865B
Authority
IT
Italy
Prior art keywords
semiconductor arrangement
semiconductor
arrangement
Prior art date
Application number
ITMI922354A
Other languages
English (en)
Inventor
Wilfried Quast
Original Assignee
Telefunken Electronic Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Telefunken Electronic Gmbh filed Critical Telefunken Electronic Gmbh
Publication of ITMI922354A0 publication Critical patent/ITMI922354A0/it
Publication of ITMI922354A1 publication Critical patent/ITMI922354A1/it
Application granted granted Critical
Publication of IT1255865B publication Critical patent/IT1255865B/it

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/34—DC amplifiers in which all stages are DC-coupled
    • H03F3/343—DC amplifiers in which all stages are DC-coupled with semiconductor devices only
    • H03F3/345—DC amplifiers in which all stages are DC-coupled with semiconductor devices only with field-effect devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0705—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
    • H01L27/0727—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with diodes, or capacitors or resistors
    • H01L27/0738—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with diodes, or capacitors or resistors in combination with resistors only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
    • H03D9/00—Demodulation or transference of modulation of modulated electromagnetic waves
    • H03D9/06—Transference of modulation using distributed inductance and capacitance
    • H03D9/0658—Transference of modulation using distributed inductance and capacitance by means of semiconductor devices having more than two electrodes
    • H03D9/0675—Transference of modulation using distributed inductance and capacitance by means of semiconductor devices having more than two electrodes using field effect transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/193—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
    • H03D2200/00—Indexing scheme relating to details of demodulation or transference of modulation from one carrier to another covered by H03D
    • H03D2200/0001—Circuit elements of demodulators
    • H03D2200/0007—Dual gate field effect transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
    • H03D7/00—Transference of modulation from one carrier to another, e.g. frequency-changing
    • H03D7/12—Transference of modulation from one carrier to another, e.g. frequency-changing by means of semiconductor devices having more than two electrodes
    • H03D7/125—Transference of modulation from one carrier to another, e.g. frequency-changing by means of semiconductor devices having more than two electrodes with field effect transistors

Landscapes

  • Power Engineering (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Junction Field-Effect Transistors (AREA)
ITMI922354A 1991-10-16 1992-10-14 Disposizione a semiconduttore IT1255865B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE4134176A DE4134176C2 (de) 1991-10-16 1991-10-16 Halbleiteranordnung mit einer im Halbleiterkörper integrierten und aus zwei Feldeffekttransistoren aufgebauten Tetrode

Publications (3)

Publication Number Publication Date
ITMI922354A0 ITMI922354A0 (it) 1992-10-14
ITMI922354A1 ITMI922354A1 (it) 1994-04-14
IT1255865B true IT1255865B (it) 1995-11-17

Family

ID=6442760

Family Applications (1)

Application Number Title Priority Date Filing Date
ITMI922354A IT1255865B (it) 1991-10-16 1992-10-14 Disposizione a semiconduttore

Country Status (4)

Country Link
US (1) US5317282A (it)
DE (1) DE4134176C2 (it)
FR (1) FR2682812A1 (it)
IT (1) IT1255865B (it)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6271067B1 (en) * 1998-02-27 2001-08-07 Micron Technology, Inc. Methods of forming field effect transistors and field effect transistor circuitry
KR100585886B1 (ko) * 2004-01-27 2006-06-01 삼성전자주식회사 동적 문턱 전압을 가지는 반도체 회로
US7864492B2 (en) * 2006-10-31 2011-01-04 Siemens Industry, Inc. Systems and methods for arc fault detection

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2823662A1 (de) * 1978-05-30 1979-12-06 Siemens Ag Schaltungsanordnung zur arbeitspunktstabilisierung eines verstaerker-feldeffekttransistors
DE3017654A1 (de) * 1980-05-08 1981-11-12 Siemens AG, 1000 Berlin und 8000 München Integrierte schaltungsanordnung
US4658220A (en) * 1985-09-06 1987-04-14 Texas Instruments Incorporated Dual-gate, field-effect transistor low noise amplifier
JPH0770733B2 (ja) * 1988-02-22 1995-07-31 株式会社東芝 半導体装置とその使用方法

Also Published As

Publication number Publication date
DE4134176C2 (de) 1994-04-21
FR2682812A1 (fr) 1993-04-23
ITMI922354A0 (it) 1992-10-14
FR2682812B1 (it) 1995-01-20
DE4134176A1 (de) 1993-04-22
ITMI922354A1 (it) 1994-04-14
US5317282A (en) 1994-05-31

Similar Documents

Publication Publication Date Title
DE69229546D1 (de) Halbleiteranordnung
DE69332329D1 (de) Halbleiteranordnung
DE69332960D1 (de) Halbleiteranordnung
DE69210942T2 (de) Halbleiterherstellung
DE69232525T2 (de) Halbleiterspeicheranordnung
KR930012117U (ko) 반도체 패키지
DE69233450D1 (de) Halbleitermodul
DE69231039D1 (de) Halbleiteranordnungzusammenbau
DE69232912D1 (de) Halbleitergehäuse
DE69226742T2 (de) Halbleitervorrichtung
DE69124399T2 (de) Halbleitervorrichtung
KR930009747U (ko) 반도체장치
FI934710A (fi) 4-aryl-3-(heteroarylureido)kinolinderivat
DE69210935T2 (de) Halbleiteranordnung
DE69333792D1 (de) Halbleiteranordnung
DE69227663T2 (de) Halbleitereinrichtung
IT1255865B (it) Disposizione a semiconduttore
DE69130150D1 (de) Halbleiteranordnung
KR930004364U (ko) 세미기
KR920020634U (ko) 세미기
KR930016280U (ko) 고집적 패키지
BR7100515U (pt) Disposicao proporcionada a parafuso-broca
ITLE910007A0 (it) P o v a r
DK29791D0 (da) Inhaleringsapparat
BR7102600U (pt) Disposicao em embalagem

Legal Events

Date Code Title Description
0001 Granted
TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19971029