FR2566582B1 - Dispositif bidirectionnel de protection declenche par avalanche - Google Patents

Dispositif bidirectionnel de protection declenche par avalanche

Info

Publication number
FR2566582B1
FR2566582B1 FR8409874A FR8409874A FR2566582B1 FR 2566582 B1 FR2566582 B1 FR 2566582B1 FR 8409874 A FR8409874 A FR 8409874A FR 8409874 A FR8409874 A FR 8409874A FR 2566582 B1 FR2566582 B1 FR 2566582B1
Authority
FR
France
Prior art keywords
avalanche
protection device
device triggered
way protection
way
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR8409874A
Other languages
English (en)
Other versions
FR2566582A1 (fr
Inventor
Pierre Bacuvier
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SILICIUM SEMICONDUCTEUR SSC
Original Assignee
SILICIUM SEMICONDUCTEUR SSC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SILICIUM SEMICONDUCTEUR SSC filed Critical SILICIUM SEMICONDUCTEUR SSC
Priority to FR8409874A priority Critical patent/FR2566582B1/fr
Publication of FR2566582A1 publication Critical patent/FR2566582A1/fr
Application granted granted Critical
Publication of FR2566582B1 publication Critical patent/FR2566582B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H9/00—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
    • H02H9/04—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage
    • H02H9/044—Physical layout, materials not provided for elsewhere
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/0817—Thyristors only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/747—Bidirectional devices, e.g. triacs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/87—Thyristor diodes, e.g. Shockley diodes, break-over diodes
FR8409874A 1984-06-22 1984-06-22 Dispositif bidirectionnel de protection declenche par avalanche Expired FR2566582B1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR8409874A FR2566582B1 (fr) 1984-06-22 1984-06-22 Dispositif bidirectionnel de protection declenche par avalanche

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8409874A FR2566582B1 (fr) 1984-06-22 1984-06-22 Dispositif bidirectionnel de protection declenche par avalanche

Publications (2)

Publication Number Publication Date
FR2566582A1 FR2566582A1 (fr) 1985-12-27
FR2566582B1 true FR2566582B1 (fr) 1987-02-20

Family

ID=9305345

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8409874A Expired FR2566582B1 (fr) 1984-06-22 1984-06-22 Dispositif bidirectionnel de protection declenche par avalanche

Country Status (1)

Country Link
FR (1) FR2566582B1 (fr)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2598043A1 (fr) * 1986-04-25 1987-10-30 Thomson Csf Composant semiconducteur de protection contre les surtensions et surintensites
FR2620271B1 (fr) * 1987-09-08 1990-01-12 Thomson Semiconducteurs Dispositif semiconducteur de protection contre les surtensions
GB9127476D0 (en) * 1991-12-30 1992-02-19 Texas Instruments Ltd A semiconductor integrated circuit
GB2263579A (en) * 1992-01-24 1993-07-28 Texas Instruments Ltd An integrated circuit with intermingled electrodes
US5483086A (en) * 1993-04-20 1996-01-09 Shindengen Electric Manufacturing Co., Ltd. Four layer semiconductor surge protector having plural short-circuited junctions
FR2719721B1 (fr) * 1994-05-09 1996-09-20 Sgs Thomson Microelectronics Protection d'interface de lignes téléphoniques.
JP4188428B2 (ja) * 1998-09-10 2008-11-26 三菱電機株式会社 半導体装置及びその駆動方法
US6501630B1 (en) 1999-12-17 2002-12-31 Koninklijke Philips Electronics N.V. Bi-directional ESD diode structure
US6674129B1 (en) 1999-12-17 2004-01-06 Koninklijke Phillips Electronics N.V. ESD diode structure
FR2834128B1 (fr) * 2001-12-21 2005-03-04 St Microelectronics Sa Dispositif de protection bidirectionnel a faible capacite
FI116176B (fi) 2004-05-18 2005-09-30 Abb Oy Maadoitus- ja ylijännitesuojausjärjestely
GB0520909D0 (en) * 2005-10-14 2005-11-23 Eco Semiconductors Ltd Power semiconductor devices

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4021837A (en) * 1975-04-21 1977-05-03 Hutson Jearld L Symmetrical semiconductor switch having carrier lifetime degrading structure
FR2336802A1 (fr) * 1975-12-24 1977-07-22 Silec Semi Conducteurs Nouvelle structure de triac
US4286279A (en) * 1976-09-20 1981-08-25 Hutson Jearld L Multilayer semiconductor switching devices
DE2723951A1 (de) * 1977-05-27 1978-11-30 Bbc Brown Boveri & Cie In zwei quadranten der strom- spannungs-charakteristik schaltbares leistungs-halbleiterbauelement
FR2536909A1 (fr) * 1982-11-25 1984-06-01 Centre Nat Rech Scient Structure de thyristor a allumage intrinseque et son application a la realisation d'un dispositif bidirectionnel

Also Published As

Publication number Publication date
FR2566582A1 (fr) 1985-12-27

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Legal Events

Date Code Title Description
ST Notification of lapse