DE69521024D1 - Optoelektronische halbleitervorrichtung mit einer halbleiter-laserdiode - Google Patents

Optoelektronische halbleitervorrichtung mit einer halbleiter-laserdiode

Info

Publication number
DE69521024D1
DE69521024D1 DE69521024T DE69521024T DE69521024D1 DE 69521024 D1 DE69521024 D1 DE 69521024D1 DE 69521024 T DE69521024 T DE 69521024T DE 69521024 T DE69521024 T DE 69521024T DE 69521024 D1 DE69521024 D1 DE 69521024D1
Authority
DE
Germany
Prior art keywords
laser diode
semiconductor device
optoelectronic
semiconductor laser
optoelectronic semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69521024T
Other languages
English (en)
Other versions
DE69521024T2 (de
Inventor
Frederik Tiemeijer
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Uniphase Opto Holdings Inc
Original Assignee
Uniphase Opto Holdings Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Uniphase Opto Holdings Inc filed Critical Uniphase Opto Holdings Inc
Publication of DE69521024D1 publication Critical patent/DE69521024D1/de
Application granted granted Critical
Publication of DE69521024T2 publication Critical patent/DE69521024T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1028—Coupling to elements in the cavity, e.g. coupling to waveguides adjacent the active region, e.g. forward coupled [DFC] structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/50—Amplifier structures not provided for in groups H01S5/02 - H01S5/30
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/0607—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature
    • H01S5/0608—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature controlled by light, e.g. optical switch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H01S5/4068—Edge-emitting structures with lateral coupling by axially offset or by merging waveguides, e.g. Y-couplers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/50—Amplifier structures not provided for in groups H01S5/02 - H01S5/30
    • H01S5/5009—Amplifier structures not provided for in groups H01S5/02 - H01S5/30 the arrangement being polarisation-insensitive
    • H01S5/5018—Amplifier structures not provided for in groups H01S5/02 - H01S5/30 the arrangement being polarisation-insensitive using two or more amplifiers or multiple passes through the same amplifier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/50—Amplifier structures not provided for in groups H01S5/02 - H01S5/30
    • H01S5/509—Wavelength converting amplifier, e.g. signal gating with a second beam using gain saturation

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Optical Integrated Circuits (AREA)
DE69521024T 1994-09-06 1995-08-28 Optoelektronische halbleitervorrichtung mit einer halbleiter-laserdiode Expired - Fee Related DE69521024T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP94202537 1994-09-06
PCT/IB1995/000698 WO1996008044A2 (en) 1994-09-06 1995-08-28 Optoelectronic semiconductor device with a semiconductor diode laser

Publications (2)

Publication Number Publication Date
DE69521024D1 true DE69521024D1 (de) 2001-06-28
DE69521024T2 DE69521024T2 (de) 2001-10-25

Family

ID=8217164

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69521024T Expired - Fee Related DE69521024T2 (de) 1994-09-06 1995-08-28 Optoelektronische halbleitervorrichtung mit einer halbleiter-laserdiode

Country Status (4)

Country Link
US (1) US5692001A (de)
EP (1) EP0727099B1 (de)
DE (1) DE69521024T2 (de)
WO (1) WO1996008044A2 (de)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6047096A (en) * 1997-03-07 2000-04-04 Telefonaktiebolaget Lm Ericsson Optical device
FR2768524B1 (fr) * 1997-09-12 1999-10-22 France Telecom Amplificateur a large surface avec recombineur a interferences multimodes
US6480640B1 (en) * 1997-11-28 2002-11-12 Sharp Kabushiki Haisha Integrated optical circuit device and method for producing the same
US6687267B2 (en) 2002-02-06 2004-02-03 Jds Uniphase Corporation Widely tunable laser
JP4031263B2 (ja) * 2002-03-05 2008-01-09 三菱電機株式会社 半導体レーザ装置の製造方法
GB0723893D0 (en) * 2007-12-06 2008-01-16 Univ Cardiff Analysis device and analysis techniques
EP2521227B1 (de) * 2011-05-04 2016-09-07 Alcatel Lucent Optische Halbleiterverstärkervorrichtung und optischer Matrixschalter

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3701044A (en) * 1970-06-29 1972-10-24 Bell Telephone Labor Inc Optical coupling of adjacent stripe contact geometry semiconductor lasers
IT1149770B (it) * 1982-02-25 1986-12-10 Italtel Spa Circuito per separare due bande di frequenze per segnali ad altissima frequenza in doppia polarizzazione
JPS59100583A (ja) * 1982-12-01 1984-06-09 Hitachi Ltd 半導体レ−ザ装置
US4607370A (en) * 1984-02-29 1986-08-19 California Institute Of Technology Paired, separately controlled, and coupled or uncoupled stripe geometry semiconductor lasers
JPS6215879A (ja) * 1985-07-12 1987-01-24 Sharp Corp 半導体レ−ザアレイ装置
US4730327A (en) * 1985-12-16 1988-03-08 Lytel Incorporated Dual channel fabry-perot laser
US4827482A (en) * 1988-03-21 1989-05-02 Massachusetts Institute Of Technology Phase-locked semiconductor laser arrays
SE462351B (sv) * 1988-10-21 1990-06-11 Ericsson Telefon Ab L M Laseranordning foer ett optiskt kommunikationssystem
JPH02271586A (ja) * 1989-04-12 1990-11-06 Mitsubishi Electric Corp 半導体レーザ装置
WO1992022111A1 (de) * 1991-05-31 1992-12-10 Standard Elektrik Lorenz Aktiengesellschaft Optisch steuerbarer halbleiterlaser
US5325388A (en) * 1993-05-05 1994-06-28 The United States Of America As Represented By The Secretary Of The Army Optoelectronic waveguide neural architecture
JPH08503820A (ja) * 1993-09-10 1996-04-23 フィリップス エレクトロニクス ネムローゼ フェン ノートシャップ リングレーザ
JP3578351B2 (ja) * 1993-11-04 2004-10-20 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴイ マルチモード干渉結合器における強度特性及び位相特性の変化方法

Also Published As

Publication number Publication date
US5692001A (en) 1997-11-25
WO1996008044A3 (en) 1996-05-30
EP0727099A1 (de) 1996-08-21
WO1996008044A2 (en) 1996-03-14
DE69521024T2 (de) 2001-10-25
EP0727099B1 (de) 2001-05-23

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee