DE69325045D1 - Oberflächenemittierender Halbleiterlaser mit verbesserter optischer Begrenzung - Google Patents
Oberflächenemittierender Halbleiterlaser mit verbesserter optischer BegrenzungInfo
- Publication number
- DE69325045D1 DE69325045D1 DE69325045T DE69325045T DE69325045D1 DE 69325045 D1 DE69325045 D1 DE 69325045D1 DE 69325045 T DE69325045 T DE 69325045T DE 69325045 T DE69325045 T DE 69325045T DE 69325045 D1 DE69325045 D1 DE 69325045D1
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor laser
- surface emitting
- emitting semiconductor
- improved optical
- optical limitation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
- H01S5/0282—Passivation layers or treatments
- H01S5/0283—Optically inactive coating on the facet, e.g. half-wave coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
- H01S5/2218—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special optical properties
- H01S5/222—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special optical properties having a refractive index lower than that of the cladding layers or outer guiding layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
- H01S5/2222—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special electric properties
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
- Led Devices (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US07/857,350 US5212701A (en) | 1992-03-25 | 1992-03-25 | Semiconductor surface emitting laser having enhanced optical confinement |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69325045D1 true DE69325045D1 (de) | 1999-07-01 |
DE69325045T2 DE69325045T2 (de) | 1999-11-11 |
Family
ID=25325798
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69325045T Expired - Lifetime DE69325045T2 (de) | 1992-03-25 | 1993-03-18 | Oberflächenemittierender Halbleiterlaser mit verbesserter optischer Begrenzung |
Country Status (4)
Country | Link |
---|---|
US (2) | US5212701A (de) |
EP (1) | EP0562769B1 (de) |
JP (1) | JP3121707B2 (de) |
DE (1) | DE69325045T2 (de) |
Families Citing this family (36)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2708992B2 (ja) * | 1991-12-20 | 1998-02-04 | シャープ株式会社 | AlGaInP系半導体発光装置の製造方法 |
US5353295A (en) * | 1992-08-10 | 1994-10-04 | The Board Of Trustees Of The University Of Illinois | Semiconductor laser device with coupled cavities |
US5351257A (en) * | 1993-03-08 | 1994-09-27 | Motorola, Inc. | VCSEL with vertical offset operating region providing a lateral waveguide and current limiting and method of fabrication |
JPH06268314A (ja) * | 1993-03-11 | 1994-09-22 | Nec Corp | 半導体レーザ |
SE501723C2 (sv) * | 1993-09-10 | 1995-05-02 | Ellemtel Utvecklings Ab | Optisk förstärkningsanordning samt användning av anordningen |
US5559053A (en) * | 1994-04-14 | 1996-09-24 | Lucent Technologies Inc. | Vertical cavity semiconductor laser |
US5510277A (en) * | 1994-06-29 | 1996-04-23 | At&T Corp. | Surface treatment for silicon substrates |
FR2724056B1 (fr) * | 1994-08-23 | 1996-11-15 | France Telecom | Composant optique, optoelectronique ou photonique comportant au moins une cavite optique confinee lateralement et procede pour sa realisation |
US5661075A (en) * | 1995-02-06 | 1997-08-26 | Motorola | Method of making a VCSEL with passivation |
US5903590A (en) * | 1996-05-20 | 1999-05-11 | Sandia Corporation | Vertical-cavity surface-emitting laser device |
DE69931097T2 (de) * | 1998-02-25 | 2006-10-19 | Nippon Telegraph And Telephone Corp. | Oberflächenemittierender Halbleiterlaser mit vertikalem Resonator |
US5960024A (en) | 1998-03-30 | 1999-09-28 | Bandwidth Unlimited, Inc. | Vertical optical cavities produced with selective area epitaxy |
US6487231B1 (en) | 1998-04-14 | 2002-11-26 | Bandwidth 9, Inc. | Vertical cavity apparatus with tunnel junction |
US5991326A (en) | 1998-04-14 | 1999-11-23 | Bandwidth9, Inc. | Lattice-relaxed verticle optical cavities |
US6487230B1 (en) | 1998-04-14 | 2002-11-26 | Bandwidth 9, Inc | Vertical cavity apparatus with tunnel junction |
US6535541B1 (en) | 1998-04-14 | 2003-03-18 | Bandwidth 9, Inc | Vertical cavity apparatus with tunnel junction |
US6493372B1 (en) | 1998-04-14 | 2002-12-10 | Bandwidth 9, Inc. | Vertical cavity apparatus with tunnel junction |
US6760357B1 (en) | 1998-04-14 | 2004-07-06 | Bandwidth9 | Vertical cavity apparatus with tunnel junction |
US6493371B1 (en) | 1998-04-14 | 2002-12-10 | Bandwidth9, Inc. | Vertical cavity apparatus with tunnel junction |
US6493373B1 (en) | 1998-04-14 | 2002-12-10 | Bandwidth 9, Inc. | Vertical cavity apparatus with tunnel junction |
US6301281B1 (en) * | 1998-08-31 | 2001-10-09 | Agilent Technologies, Inc. | Semiconductor laser having co-doped distributed bragg reflectors |
US6226425B1 (en) | 1999-02-24 | 2001-05-01 | Bandwidth9 | Flexible optical multiplexer |
US6275513B1 (en) | 1999-06-04 | 2001-08-14 | Bandwidth 9 | Hermetically sealed semiconductor laser device |
US6233263B1 (en) | 1999-06-04 | 2001-05-15 | Bandwidth9 | Monitoring and control assembly for wavelength stabilized optical system |
DE10026734A1 (de) * | 2000-05-30 | 2001-12-13 | Osram Opto Semiconductors Gmbh | Optisch gepumpte oberflächenemittierende Halbleiterlaservorrichtung und Verfahren zu deren Herstellung |
DE10108079A1 (de) | 2000-05-30 | 2002-09-12 | Osram Opto Semiconductors Gmbh | Optisch gepumpte oberflächenemittierende Halbleiterlaservorrichtung und Verfahren zu deren Herstellung |
US6680963B2 (en) | 2001-07-24 | 2004-01-20 | Lux Net Corporation | Vertical-cavity surface emitting laser utilizing a reversed biased diode for improved current confinement |
US6534331B2 (en) | 2001-07-24 | 2003-03-18 | Luxnet Corporation | Method for making a vertical-cavity surface emitting laser with improved current confinement |
US6553053B2 (en) | 2001-07-25 | 2003-04-22 | Luxnet Corporation | Vertical cavity surface emitting laser having improved light output function |
KR100427583B1 (ko) * | 2002-01-16 | 2004-04-28 | 한국전자통신연구원 | 장파장 수직 공진 표면광 레이저의 제조 방법 |
JP2006093350A (ja) * | 2004-09-22 | 2006-04-06 | Sumitomo Electric Ind Ltd | 半導体光素子 |
KR100982421B1 (ko) * | 2004-10-14 | 2010-09-15 | 삼성전자주식회사 | 깔대기 형태의 전류주입영역을 구비하는 면발광 고출력레이저 소자 |
KR100982423B1 (ko) * | 2004-12-28 | 2010-09-15 | 삼성전자주식회사 | 이중채널 전류주입구조를 구비하는 면발광 레이저 소자 |
US7502401B2 (en) * | 2005-07-22 | 2009-03-10 | Avago Technologies General Ip (Singapore) Pte. Ltd. | VCSEL system with transverse P/N junction |
JP4877146B2 (ja) * | 2007-08-20 | 2012-02-15 | 三菱電機株式会社 | 半導体レーザ素子の製造方法 |
US10554018B2 (en) * | 2017-12-19 | 2020-02-04 | International Business Machines Corporation | Hybrid vertical current injection electro-optical device with refractive-index-matched current blocking layer |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58143596A (ja) * | 1982-02-22 | 1983-08-26 | Toshiba Corp | 化合物半導体装置の製造方法 |
EP0208851B1 (de) * | 1982-12-16 | 1990-03-07 | Fujitsu Limited | Herstellung eines Halbleiterbauelementes mittels Molekularstrahlepitaxie |
NL8602653A (nl) * | 1986-10-23 | 1988-05-16 | Philips Nv | Halfgeleiderlaser en werkwijze ter vervaardiging daarvan. |
US4786616A (en) * | 1987-06-12 | 1988-11-22 | American Telephone And Telegraph Company | Method for heteroepitaxial growth using multiple MBE chambers |
JP2772000B2 (ja) * | 1988-11-25 | 1998-07-02 | 工業技術院長 | 電極分離型半導体レーザ装置 |
JP2863773B2 (ja) * | 1988-12-28 | 1999-03-03 | 科学技術振興事業団 | 面発光型半導体レーザ装置 |
US5076205A (en) * | 1989-01-06 | 1991-12-31 | General Signal Corporation | Modular vapor processor system |
JP2799328B2 (ja) * | 1989-06-16 | 1998-09-17 | 科学技術振興事業団 | 面発光型半導体レーザ |
JP2742539B2 (ja) * | 1989-06-16 | 1998-04-22 | 科学技術振興事業団 | 面発光型半導体レーザ |
US4949350A (en) * | 1989-07-17 | 1990-08-14 | Bell Communications Research, Inc. | Surface emitting semiconductor laser |
US5031187A (en) * | 1990-02-14 | 1991-07-09 | Bell Communications Research, Inc. | Planar array of vertical-cavity, surface-emitting lasers |
US5115442A (en) * | 1990-04-13 | 1992-05-19 | At&T Bell Laboratories | Top-emitting surface emitting laser structures |
US5034958A (en) * | 1990-04-19 | 1991-07-23 | Bell Communications Research, Inc. | Front-surface emitting diode laser |
US5034092A (en) * | 1990-10-09 | 1991-07-23 | Motorola, Inc. | Plasma etching of semiconductor substrates |
US5104824A (en) * | 1990-11-06 | 1992-04-14 | Bell Communications Research, Inc. | Selective area regrowth for surface-emitting lasers and other sharp features |
US5208183A (en) * | 1990-12-20 | 1993-05-04 | At&T Bell Laboratories | Method of making a semiconductor laser |
-
1992
- 1992-03-25 US US07/857,350 patent/US5212701A/en not_active Expired - Lifetime
-
1993
- 1993-02-11 US US08/016,339 patent/US5348912A/en not_active Expired - Lifetime
- 1993-03-18 EP EP93302072A patent/EP0562769B1/de not_active Expired - Lifetime
- 1993-03-18 DE DE69325045T patent/DE69325045T2/de not_active Expired - Lifetime
- 1993-03-19 JP JP8384193A patent/JP3121707B2/ja not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0562769A3 (en) | 1993-12-22 |
EP0562769B1 (de) | 1999-05-26 |
US5212701A (en) | 1993-05-18 |
JPH0613710A (ja) | 1994-01-21 |
JP3121707B2 (ja) | 2001-01-09 |
EP0562769A2 (de) | 1993-09-29 |
US5348912A (en) | 1994-09-20 |
DE69325045T2 (de) | 1999-11-11 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE69325045D1 (de) | Oberflächenemittierender Halbleiterlaser mit verbesserter optischer Begrenzung | |
DE69118066T2 (de) | Oberflächenemittierender Halbleiterlaser | |
DE69404701T2 (de) | Abstimmbarer oberflächenemittierender Halbleiterlaser | |
DE69226848D1 (de) | Lichtemittierende Diode mit verästelter Oberflächenelektrode | |
DE69509184D1 (de) | Optisches Modul mit oberflächenemittierendem Laser mit senkrechtem Resonator | |
DE69205388D1 (de) | Oberflächenemittierender Laser. | |
DE69331554D1 (de) | Lichtemittierende Diode | |
DE69127677T2 (de) | Lichtemittierende Halbleiterdioden | |
DE69601698D1 (de) | Oberflächen-emittierender Halbleiterlaser | |
DE69215248D1 (de) | Interferometer mit 2-Farben geregelten Laserdioden | |
DE69300520D1 (de) | Hochleistungslaser mit faseroptischer zuleitung. | |
DE69522778T2 (de) | Oberflächenemittierender Laser | |
DE69314816T2 (de) | Lichtemittierende Halbleitervorrichtung | |
DE69117488T2 (de) | Halbleiterlaser mit verteilter rückkoppelung | |
DE69308045D1 (de) | Lichtemittierende Halbleitervorrichtung | |
DE69505900D1 (de) | Halbleiterlaser mit integrierter Wellenleiterlinse | |
DE69007461D1 (de) | Oberflächenemittierender Halbleiterlaser mit lateralem Elektrodenkontakt. | |
DE69610522D1 (de) | Oberflächenemittierender Laser mit verbessertem Wirkungsgrad | |
EP0444366A3 (en) | Visible light emitting semiconductor laser with inverse mesa-shaped groove section | |
DE69309011T2 (de) | Halbleiterlaser mit optimiertem Resonator | |
DE69215747D1 (de) | Halbleiterlaserdiode | |
DE69131034D1 (de) | Halbleiterlaser mit vergrabener Streifenstruktur | |
DE59207440D1 (de) | Optisch steuerbarer halbleiterlaser | |
DE69405959T2 (de) | Integrierte oberflächenemittierende Laservorrichtung | |
KR970003715U (ko) | 표면실장용 발광소자 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |