DE69405959T2 - Integrierte oberflächenemittierende Laservorrichtung - Google Patents
Integrierte oberflächenemittierende LaservorrichtungInfo
- Publication number
- DE69405959T2 DE69405959T2 DE1994605959 DE69405959T DE69405959T2 DE 69405959 T2 DE69405959 T2 DE 69405959T2 DE 1994605959 DE1994605959 DE 1994605959 DE 69405959 T DE69405959 T DE 69405959T DE 69405959 T2 DE69405959 T2 DE 69405959T2
- Authority
- DE
- Germany
- Prior art keywords
- laser device
- emitting laser
- surface emitting
- integrated surface
- integrated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18341—Intra-cavity contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0421—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
- H01S5/0422—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers with n- and p-contacts on the same side of the active layer
- H01S5/0424—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers with n- and p-contacts on the same side of the active layer lateral current injection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
- H01S5/1228—DFB lasers with a complex coupled grating, e.g. gain or loss coupling
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18344—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] characterized by the mesa, e.g. dimensions or shape of the mesa
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR9312940A FR2711856B1 (fr) | 1993-10-29 | 1993-10-29 | Dispositif laser à émission de surface. |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69405959D1 DE69405959D1 (de) | 1997-11-06 |
DE69405959T2 true DE69405959T2 (de) | 1998-04-02 |
Family
ID=9452361
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE1994605959 Expired - Fee Related DE69405959T2 (de) | 1993-10-29 | 1994-10-27 | Integrierte oberflächenemittierende Laservorrichtung |
Country Status (3)
Country | Link |
---|---|
EP (1) | EP0651477B1 (de) |
DE (1) | DE69405959T2 (de) |
FR (1) | FR2711856B1 (de) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2734676B1 (fr) * | 1995-05-23 | 1997-08-08 | Labeyrie Antoine | Procede et dispositifs d'emission ou reception laser pour la transmission d'informations par voie optique |
DE19523267A1 (de) * | 1995-06-27 | 1997-01-02 | Bosch Gmbh Robert | Lasermodul |
KR100374796B1 (ko) * | 2001-02-02 | 2003-03-03 | 삼성전기주식회사 | P형 전극과 활성층 사이에 효과적인 정공 확산을 위한 스페이서를 구비하는 GaN 면 발광 레이저 다이오드 및그 제조 방법 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4675876A (en) * | 1985-02-14 | 1987-06-23 | Northern Telecom Limited | Bragg distributed feedback surface emitting laser |
US5052016A (en) * | 1990-05-18 | 1991-09-24 | University Of New Mexico | Resonant-periodic-gain distributed-feedback surface-emitting semiconductor laser |
-
1993
- 1993-10-29 FR FR9312940A patent/FR2711856B1/fr not_active Expired - Fee Related
-
1994
- 1994-10-27 EP EP19940402423 patent/EP0651477B1/de not_active Expired - Lifetime
- 1994-10-27 DE DE1994605959 patent/DE69405959T2/de not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
FR2711856A1 (fr) | 1995-05-05 |
EP0651477A1 (de) | 1995-05-03 |
EP0651477B1 (de) | 1997-10-01 |
DE69405959D1 (de) | 1997-11-06 |
FR2711856B1 (fr) | 1995-11-24 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8327 | Change in the person/name/address of the patent owner |
Owner name: AVANEX CORP.(N.D.GES.D.STAATES DELAWARE), FREMONT, |
|
8339 | Ceased/non-payment of the annual fee |