DE69118066D1 - Oberflächenemittierender Halbleiterlaser - Google Patents

Oberflächenemittierender Halbleiterlaser

Info

Publication number
DE69118066D1
DE69118066D1 DE69118066T DE69118066T DE69118066D1 DE 69118066 D1 DE69118066 D1 DE 69118066D1 DE 69118066 T DE69118066 T DE 69118066T DE 69118066 T DE69118066 T DE 69118066T DE 69118066 D1 DE69118066 D1 DE 69118066D1
Authority
DE
Germany
Prior art keywords
semiconductor laser
surface emitting
emitting semiconductor
laser
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69118066T
Other languages
English (en)
Other versions
DE69118066T2 (de
Inventor
Katsumi Mori
Tatsuya Asaka
Hideaki Iwano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Application granted granted Critical
Publication of DE69118066D1 publication Critical patent/DE69118066D1/de
Publication of DE69118066T2 publication Critical patent/DE69118066T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H01S5/18338—Non-circular shape of the structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/42—Arrays of surface emitting lasers
    • H01S5/423—Arrays of surface emitting lasers having a vertical cavity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/16—Semiconductor lasers with special structural design to influence the modes, e.g. specific multimode
    • H01S2301/166—Single transverse or lateral mode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
    • H01S5/18369—Structure of the reflectors, e.g. hybrid mirrors based on dielectric materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18386—Details of the emission surface for influencing the near- or far-field, e.g. a grating on the surface
    • H01S5/18394—Apertures, e.g. defined by the shape of the upper electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H01S5/2211—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers based on II-VI materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H01S5/2222—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special electric properties
    • H01S5/2224—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special electric properties semi-insulating semiconductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H01S5/4068—Edge-emitting structures with lateral coupling by axially offset or by merging waveguides, e.g. Y-couplers

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Lasers (AREA)
DE69118066T 1990-09-12 1991-09-10 Oberflächenemittierender Halbleiterlaser Expired - Lifetime DE69118066T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP24200090 1990-09-12

Publications (2)

Publication Number Publication Date
DE69118066D1 true DE69118066D1 (de) 1996-04-25
DE69118066T2 DE69118066T2 (de) 1996-09-19

Family

ID=17082765

Family Applications (3)

Application Number Title Priority Date Filing Date
DE69118065T Expired - Lifetime DE69118065T2 (de) 1990-09-12 1991-09-10 Oberflächenemittierender Halbleiterlaser und Verfahren zu seiner Herstellung
DE69116038T Expired - Lifetime DE69116038T2 (de) 1990-09-12 1991-09-10 Oberflächenemittierender Halbleiterlaser
DE69118066T Expired - Lifetime DE69118066T2 (de) 1990-09-12 1991-09-10 Oberflächenemittierender Halbleiterlaser

Family Applications Before (2)

Application Number Title Priority Date Filing Date
DE69118065T Expired - Lifetime DE69118065T2 (de) 1990-09-12 1991-09-10 Oberflächenemittierender Halbleiterlaser und Verfahren zu seiner Herstellung
DE69116038T Expired - Lifetime DE69116038T2 (de) 1990-09-12 1991-09-10 Oberflächenemittierender Halbleiterlaser

Country Status (5)

Country Link
US (3) US5182757A (de)
EP (3) EP0475372B1 (de)
KR (3) KR100210288B1 (de)
DE (3) DE69118065T2 (de)
TW (1) TW229338B (de)

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US5317584A (en) * 1990-09-12 1994-05-31 Seiko Epson Corporation Surface emission type semiconductor laser
US5436922A (en) * 1990-09-12 1995-07-25 Seiko Epson Corporation Surface emission type semiconductor laser
US5356832A (en) * 1990-09-12 1994-10-18 Seiko Epson Corporation Method of making surface emission type semiconductor laser
US5537666A (en) * 1990-09-12 1996-07-16 Seiko Epson Coropration Surface emission type semiconductor laser
US5404369A (en) * 1990-09-12 1995-04-04 Seiko Epson Corporation Surface emission type semiconductor laser
US5295148A (en) * 1990-09-12 1994-03-15 Seiko Epson Corporation Surface emission type semiconductor laser
DE69207521T2 (de) * 1991-03-28 1996-09-05 Seiko Epson Corp Senkrecht zur Oberfläche emittierender Halbleiterlaser und Verfahren zu seiner Herstellung
WO1992021069A1 (en) 1991-05-14 1992-11-26 Seiko Epson Corporation Image-forming device
KR950007490B1 (ko) * 1991-12-28 1995-07-11 엘지전자주식회사 반도체 레이저
US5341001A (en) * 1992-02-13 1994-08-23 Matsushita Electric Industrial Co., Ltd. Sulfide-selenide manganese-zinc mixed crystal photo semiconductor and laser diode
US5245622A (en) * 1992-05-07 1993-09-14 Bandgap Technology Corporation Vertical-cavity surface-emitting lasers with intra-cavity structures
US5351255A (en) * 1992-05-12 1994-09-27 North Carolina State University Of Raleigh Inverted integrated heterostructure of group II-VI semiconductor materials including epitaxial ohmic contact and method of fabricating same
JPH065975A (ja) * 1992-06-22 1994-01-14 Matsushita Electric Ind Co Ltd 半導体レーザ
JP3095545B2 (ja) * 1992-09-29 2000-10-03 株式会社東芝 面発光型半導体発光装置およびその製造方法
JPH0722646A (ja) * 1993-06-30 1995-01-24 Mitsubishi Chem Corp 電流ブロック層を有するｌｅｄ
SE501722C2 (sv) * 1993-09-10 1995-05-02 Ellemtel Utvecklings Ab Ytemitterande laseranordning med vertikal kavitet
SE501721C2 (sv) * 1993-09-10 1995-05-02 Ellemtel Utvecklings Ab Laseranordning med i en optisk kavitet seriekopplade laserstrukturer
KR100363503B1 (ko) * 1994-01-20 2003-02-05 세이코 엡슨 가부시키가이샤 표면방출형반도체레이저와그제조방법
JP3452982B2 (ja) * 1994-08-24 2003-10-06 ローム株式会社 Ｌｅｄプリントヘッド、およびｌｅｄアレイチップ、ならびにそのｌｅｄアレイチップの製造方法
US5778018A (en) * 1994-10-13 1998-07-07 Nec Corporation VCSELs (vertical-cavity surface emitting lasers) and VCSEL-based devices
US5838705A (en) * 1996-11-04 1998-11-17 Motorola, Inc. Light emitting device having a defect inhibition layer
KR100322061B1 (ko) * 1998-07-01 2002-03-08 김순택 Crt용반도체레이저스크린
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US6291839B1 (en) * 1998-09-11 2001-09-18 Lulileds Lighting, U.S. Llc Light emitting device having a finely-patterned reflective contact
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JP2006128475A (ja) * 2004-10-29 2006-05-18 Mitsubishi Electric Corp 半導体レーザ
KR100638732B1 (ko) * 2005-04-15 2006-10-30 삼성전기주식회사 수직구조 질화물 반도체 발광소자의 제조방법
US8373153B2 (en) 2009-05-26 2013-02-12 University Of Seoul Industry Cooperation Foundation Photodetectors
US8367925B2 (en) * 2009-06-29 2013-02-05 University Of Seoul Industry Cooperation Foundation Light-electricity conversion device
US8809834B2 (en) * 2009-07-06 2014-08-19 University Of Seoul Industry Cooperation Foundation Photodetector capable of detecting long wavelength radiation
US8748862B2 (en) * 2009-07-06 2014-06-10 University Of Seoul Industry Cooperation Foundation Compound semiconductors
US8395141B2 (en) * 2009-07-06 2013-03-12 University Of Seoul Industry Cooperation Foundation Compound semiconductors
US8227793B2 (en) * 2009-07-06 2012-07-24 University Of Seoul Industry Cooperation Foundation Photodetector capable of detecting the visible light spectrum
US8368990B2 (en) 2009-08-21 2013-02-05 University Of Seoul Industry Cooperation Foundation Polariton mode optical switch with composite structure
US8368047B2 (en) * 2009-10-27 2013-02-05 University Of Seoul Industry Cooperation Foundation Semiconductor device
US8058641B2 (en) 2009-11-18 2011-11-15 University of Seoul Industry Corporation Foundation Copper blend I-VII compound semiconductor light-emitting devices
US10186676B2 (en) * 2017-03-13 2019-01-22 Intel Corporation Emissive devices for displays
US10651527B2 (en) 2017-08-22 2020-05-12 Qorvo Us, Inc. Spatial power-combining devices with segmented waveguides and antennas
WO2020026573A1 (ja) * 2018-07-31 2020-02-06 ソニー株式会社 面発光半導体レーザ
KR102515120B1 (ko) * 2019-01-21 2023-03-29 한온시스템 주식회사 스크롤 압축기
KR20230012705A (ko) 2021-07-16 2023-01-26 주식회사 노브메타파마 고시페틴의 제조방법
CN113675726A (zh) * 2021-10-21 2021-11-19 福建慧芯激光科技有限公司 一种高速垂直腔面发射激光器的外延结构

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Also Published As

Publication number Publication date
DE69118066T2 (de) 1996-09-19
KR920007283A (ko) 1992-04-28
US5182757A (en) 1993-01-26
KR100210288B1 (ko) 1999-07-15
EP0475372A2 (de) 1992-03-18
DE69118065T2 (de) 1996-09-19
EP0475373A2 (de) 1992-03-18
EP0475371A2 (de) 1992-03-18
KR920007282A (ko) 1992-04-28
DE69116038D1 (de) 1996-02-15
KR920007281A (ko) 1992-04-28
KR100210290B1 (ko) 1999-07-15
EP0475371B1 (de) 1996-03-20
EP0475371A3 (en) 1992-08-05
TW229338B (de) 1994-09-01
KR100210289B1 (ko) 1999-07-15
US5181219A (en) 1993-01-19
EP0475372B1 (de) 1996-01-03
EP0475373A3 (en) 1992-08-12
DE69116038T2 (de) 1996-06-20
DE69118065D1 (de) 1996-04-25
US5181221A (en) 1993-01-19
EP0475372A3 (en) 1992-08-05
EP0475373B1 (de) 1996-03-20

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