DE69522778T2 - Oberflächenemittierender Laser - Google Patents
Oberflächenemittierender LaserInfo
- Publication number
- DE69522778T2 DE69522778T2 DE69522778T DE69522778T DE69522778T2 DE 69522778 T2 DE69522778 T2 DE 69522778T2 DE 69522778 T DE69522778 T DE 69522778T DE 69522778 T DE69522778 T DE 69522778T DE 69522778 T2 DE69522778 T2 DE 69522778T2
- Authority
- DE
- Germany
- Prior art keywords
- emitting laser
- surface emitting
- laser
- emitting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18358—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] containing spacer layers to adjust the phase of the light wave in the cavity
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S2301/00—Functional characteristics
- H01S2301/18—Semiconductor lasers with special structural design for influencing the near- or far-field
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
- H01S5/0267—Integrated focusing lens
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1053—Comprising an active region having a varying composition or cross-section in a specific direction
- H01S5/1064—Comprising an active region having a varying composition or cross-section in a specific direction varying width along the optical axis
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
- H01S5/18322—Position of the structure
- H01S5/18327—Structure being part of a DBR
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
- H01S5/18322—Position of the structure
- H01S5/1833—Position of the structure with more than one structure
- H01S5/18333—Position of the structure with more than one structure only above the active layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18386—Details of the emission surface for influencing the near- or far-field, e.g. a grating on the surface
- H01S5/18388—Lenses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/2054—Methods of obtaining the confinement
- H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
- H01S5/2063—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion obtained by particle bombardment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/3421—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers layer structure of quantum wells to influence the near/far field
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/3428—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers layer orientation perpendicular to the substrate
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB9422951A GB2295270A (en) | 1994-11-14 | 1994-11-14 | Surface-emitting laser with profiled active region |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69522778D1 DE69522778D1 (de) | 2001-10-25 |
DE69522778T2 true DE69522778T2 (de) | 2002-07-04 |
Family
ID=10764361
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69522778T Expired - Lifetime DE69522778T2 (de) | 1994-11-14 | 1995-11-13 | Oberflächenemittierender Laser |
Country Status (5)
Country | Link |
---|---|
US (1) | US5812577A (de) |
EP (1) | EP0712182B1 (de) |
JP (1) | JP3717215B2 (de) |
DE (1) | DE69522778T2 (de) |
GB (1) | GB2295270A (de) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE10253908A1 (de) * | 2002-09-24 | 2004-04-08 | Osram Opto Semiconductors Gmbh | Strahlungsemittierendes Halbleiterbauelement |
Families Citing this family (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6263002B1 (en) | 1997-09-05 | 2001-07-17 | Micron Optics, Inc. | Tunable fiber Fabry-Perot surface-emitting lasers |
US5960024A (en) * | 1998-03-30 | 1999-09-28 | Bandwidth Unlimited, Inc. | Vertical optical cavities produced with selective area epitaxy |
US6117699A (en) * | 1998-04-10 | 2000-09-12 | Hewlett-Packard Company | Monolithic multiple wavelength VCSEL array |
US6493371B1 (en) | 1998-04-14 | 2002-12-10 | Bandwidth9, Inc. | Vertical cavity apparatus with tunnel junction |
US6493372B1 (en) | 1998-04-14 | 2002-12-10 | Bandwidth 9, Inc. | Vertical cavity apparatus with tunnel junction |
US6487230B1 (en) | 1998-04-14 | 2002-11-26 | Bandwidth 9, Inc | Vertical cavity apparatus with tunnel junction |
US6760357B1 (en) | 1998-04-14 | 2004-07-06 | Bandwidth9 | Vertical cavity apparatus with tunnel junction |
US6487231B1 (en) | 1998-04-14 | 2002-11-26 | Bandwidth 9, Inc. | Vertical cavity apparatus with tunnel junction |
US6493373B1 (en) | 1998-04-14 | 2002-12-10 | Bandwidth 9, Inc. | Vertical cavity apparatus with tunnel junction |
US5991326A (en) | 1998-04-14 | 1999-11-23 | Bandwidth9, Inc. | Lattice-relaxed verticle optical cavities |
US6535541B1 (en) | 1998-04-14 | 2003-03-18 | Bandwidth 9, Inc | Vertical cavity apparatus with tunnel junction |
US6330265B1 (en) * | 1998-04-21 | 2001-12-11 | Kabushiki Kaisha Toshiba | Optical functional element and transmission device |
GB9901961D0 (en) * | 1999-01-29 | 1999-03-17 | Univ Sheffield | Optical device and method of manufacture |
US6226425B1 (en) | 1999-02-24 | 2001-05-01 | Bandwidth9 | Flexible optical multiplexer |
US6275513B1 (en) | 1999-06-04 | 2001-08-14 | Bandwidth 9 | Hermetically sealed semiconductor laser device |
US6233263B1 (en) | 1999-06-04 | 2001-05-15 | Bandwidth9 | Monitoring and control assembly for wavelength stabilized optical system |
TW484760U (en) * | 2000-10-13 | 2002-04-21 | Acer Inc | Winding cable for limiting electromagnetic radiation |
US6727520B2 (en) | 2000-12-29 | 2004-04-27 | Honeywell International Inc. | Spatially modulated reflector for an optoelectronic device |
DE10105722B4 (de) * | 2001-02-08 | 2006-12-14 | Osram Opto Semiconductors Gmbh | Halbleiter-Laser mit Vertikalresonator und modenselektiven Gebieten |
US8053794B2 (en) * | 2004-08-26 | 2011-11-08 | Lg Innotek Co., Ltd | Nitride semiconductor light emitting device and fabrication method thereof |
JP5355276B2 (ja) | 2009-07-28 | 2013-11-27 | キヤノン株式会社 | 面発光レーザ |
JPWO2018096850A1 (ja) * | 2016-11-24 | 2019-10-17 | ソニー株式会社 | 面発光レーザおよび電子機器 |
US10923884B2 (en) * | 2019-05-15 | 2021-02-16 | Microsoft Technology Licensing, Llc | Two-section edge-emitting laser |
CN112397997B (zh) * | 2020-11-16 | 2022-06-21 | 扬州乾照光电有限公司 | 一种半导体激光器及其制作方法 |
DE102022115935A1 (de) | 2022-06-27 | 2023-12-28 | Trumpf Photonic Components Gmbh | Laservorrichtung |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6042890A (ja) * | 1983-08-18 | 1985-03-07 | Mitsubishi Electric Corp | 面発光形半導体レ−ザ及びその製造方法 |
US5258990A (en) * | 1991-11-07 | 1993-11-02 | The United States Of America As Represented By The Secretary Of The United States Department Of Energy | Visible light surface emitting semiconductor laser |
US5256596A (en) * | 1992-03-26 | 1993-10-26 | Motorola, Inc. | Top emitting VCSEL with implant |
US5258316A (en) * | 1992-03-26 | 1993-11-02 | Motorola, Inc. | Patterened mirror vertical cavity surface emitting laser |
US5383214A (en) * | 1992-07-16 | 1995-01-17 | Matsushita Electric Industrial Co., Ltd. | Semiconductor laser and a method for producing the same |
US5343487A (en) * | 1992-10-01 | 1994-08-30 | Optical Concepts, Inc. | Electrical pumping scheme for vertical-cavity surface-emitting lasers |
JPH0738204A (ja) * | 1993-07-20 | 1995-02-07 | Mitsubishi Electric Corp | 半導体光デバイス及びその製造方法 |
-
1994
- 1994-11-14 GB GB9422951A patent/GB2295270A/en not_active Withdrawn
-
1995
- 1995-11-13 DE DE69522778T patent/DE69522778T2/de not_active Expired - Lifetime
- 1995-11-13 US US08/557,694 patent/US5812577A/en not_active Expired - Lifetime
- 1995-11-13 EP EP95308105A patent/EP0712182B1/de not_active Expired - Lifetime
- 1995-11-13 JP JP29459395A patent/JP3717215B2/ja not_active Expired - Fee Related
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE10253908A1 (de) * | 2002-09-24 | 2004-04-08 | Osram Opto Semiconductors Gmbh | Strahlungsemittierendes Halbleiterbauelement |
DE10253908B4 (de) * | 2002-09-24 | 2010-04-22 | Osram Opto Semiconductors Gmbh | Strahlungsemittierendes Halbleiterbauelement |
Also Published As
Publication number | Publication date |
---|---|
EP0712182A2 (de) | 1996-05-15 |
GB2295270A (en) | 1996-05-22 |
JPH08213701A (ja) | 1996-08-20 |
GB9422951D0 (en) | 1995-01-04 |
JP3717215B2 (ja) | 2005-11-16 |
DE69522778D1 (de) | 2001-10-25 |
EP0712182B1 (de) | 2001-09-19 |
EP0712182A3 (de) | 1997-01-22 |
US5812577A (en) | 1998-09-22 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |