DE69131034D1 - Halbleiterlaser mit vergrabener Streifenstruktur - Google Patents

Halbleiterlaser mit vergrabener Streifenstruktur

Info

Publication number
DE69131034D1
DE69131034D1 DE69131034T DE69131034T DE69131034D1 DE 69131034 D1 DE69131034 D1 DE 69131034D1 DE 69131034 T DE69131034 T DE 69131034T DE 69131034 T DE69131034 T DE 69131034T DE 69131034 D1 DE69131034 D1 DE 69131034D1
Authority
DE
Germany
Prior art keywords
semiconductor laser
stripe structure
buried stripe
buried
laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69131034T
Other languages
English (en)
Other versions
DE69131034T2 (de
Inventor
Toshiyuki Okumura
Kazuhiko Inoguchi
Fumihiro Konushi
Haruhisa Takiguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2229961A external-priority patent/JP2708949B2/ja
Priority claimed from JP24171590A external-priority patent/JPH04120788A/ja
Application filed by Sharp Corp filed Critical Sharp Corp
Publication of DE69131034D1 publication Critical patent/DE69131034D1/de
Application granted granted Critical
Publication of DE69131034T2 publication Critical patent/DE69131034T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2201—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure in a specific crystallographic orientation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/3235—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000 nm, e.g. InP-based 1300 nm and 1500 nm lasers
    • H01S5/32391—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000 nm, e.g. InP-based 1300 nm and 1500 nm lasers based on In(Ga)(As)P
DE69131034T 1990-08-30 1991-08-30 Halbleiterlaser mit vergrabener Streifenstruktur Expired - Fee Related DE69131034T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2229961A JP2708949B2 (ja) 1990-08-30 1990-08-30 半導体レーザ装置の製造方法
JP24171590A JPH04120788A (ja) 1990-09-11 1990-09-11 半導体レーザ装置

Publications (2)

Publication Number Publication Date
DE69131034D1 true DE69131034D1 (de) 1999-04-29
DE69131034T2 DE69131034T2 (de) 1999-09-16

Family

ID=26529082

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69131034T Expired - Fee Related DE69131034T2 (de) 1990-08-30 1991-08-30 Halbleiterlaser mit vergrabener Streifenstruktur

Country Status (3)

Country Link
US (1) US5335241A (de)
EP (1) EP0473443B1 (de)
DE (1) DE69131034T2 (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2754957B2 (ja) * 1991-07-10 1998-05-20 日本電気株式会社 半導体光制御素子およびその製造方法
JP2823476B2 (ja) * 1992-05-14 1998-11-11 三菱電機株式会社 半導体レーザおよびその製造方法
FR2805619B1 (fr) * 2000-02-24 2003-01-17 Cit Alcatel Composant optique comportant un guide a structure "ridge" grave chimiquement et son procede de fabrication
US6556605B1 (en) 2000-02-29 2003-04-29 Triquent Technology Holding, Co. Method and device for preventing zinc/iron interaction in a semiconductor laser
US6664605B1 (en) 2000-03-31 2003-12-16 Triquint Technology Holding Co. Dopant diffusion blocking for optoelectronic devices using InAlAs and/or InGaAlAs
US7135411B2 (en) * 2004-08-12 2006-11-14 Northrop Grumman Corporation Method for etching mesa isolation in antimony-based compound semiconductor structures
JP2013149724A (ja) * 2012-01-18 2013-08-01 Sumitomo Electric Ind Ltd 光集積素子の製造方法
JP5880063B2 (ja) * 2012-01-18 2016-03-08 住友電気工業株式会社 光集積素子の製造方法
JP5880065B2 (ja) 2012-01-18 2016-03-08 住友電気工業株式会社 光集積素子の製造方法
CN112635623A (zh) * 2020-12-22 2021-04-09 度亘激光技术（苏州）有限公司 一种半导体器件的衬底结构及其制备方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5367389A (en) * 1976-11-29 1978-06-15 Hitachi Ltd Production of semiconductor laser
JPS6077482A (ja) * 1983-10-04 1985-05-02 Nec Corp 半導体レ−ザの製造方法
JPS60116185A (ja) * 1983-11-28 1985-06-22 Fujikura Ltd 半導体レ−ザ
JP2716693B2 (ja) * 1985-02-08 1998-02-18 ソニー株式会社 半導体レーザー
FR2581801B1 (fr) * 1985-05-13 1987-06-26 Devoldere Pascal Procede de realisation de lasers a semiconducteurs a jonctions bloquantes assurant un confinement electrique
JPS6373690A (ja) * 1986-09-17 1988-04-04 Matsushita Electric Ind Co Ltd 半導体レ−ザ装置
JPS6425590A (en) * 1987-07-22 1989-01-27 Matsushita Electric Ind Co Ltd Manufacture of semiconductor laser
JPH0646669B2 (ja) * 1987-07-28 1994-06-15 日本電気株式会社 半導体レ−ザ及びその製造方法
JPH01283890A (ja) * 1988-05-10 1989-11-15 Mitsubishi Electric Corp 半導体レーザ装置
JPH0831659B2 (ja) * 1988-05-27 1996-03-27 富士通株式会社 半導体発光素子の製造方法
JPH0728102B2 (ja) * 1988-12-08 1995-03-29 松下電器産業株式会社 半導体レーザおよびその製造方法
US5020510A (en) * 1989-01-10 1991-06-04 Jones Darrell R Method and apparatus for heating the ground, roads or the like

Also Published As

Publication number Publication date
DE69131034T2 (de) 1999-09-16
US5335241A (en) 1994-08-02
EP0473443A3 (en) 1993-03-03
EP0473443A2 (de) 1992-03-04
EP0473443B1 (de) 1999-03-24

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee