DE69309011T2 - Halbleiterlaser mit optimiertem Resonator - Google Patents

Halbleiterlaser mit optimiertem Resonator

Info

Publication number
DE69309011T2
DE69309011T2 DE69309011T DE69309011T DE69309011T2 DE 69309011 T2 DE69309011 T2 DE 69309011T2 DE 69309011 T DE69309011 T DE 69309011T DE 69309011 T DE69309011 T DE 69309011T DE 69309011 T2 DE69309011 T2 DE 69309011T2
Authority
DE
Germany
Prior art keywords
semiconductor laser
optimized resonator
resonator
optimized
laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69309011T
Other languages
English (en)
Other versions
DE69309011D1 (de
Inventor
Hironobu Narui
Masato Doi
Kenji Sahara
Osamu C O Sony Corpara Matsuda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of DE69309011D1 publication Critical patent/DE69309011D1/de
Application granted granted Critical
Publication of DE69309011T2 publication Critical patent/DE69309011T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/065—Mode locking; Mode suppression; Mode selection ; Self pulsating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H01S5/0281—Coatings made of semiconductor materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1039—Details on the cavity length
DE69309011T 1992-12-15 1993-12-14 Halbleiterlaser mit optimiertem Resonator Expired - Fee Related DE69309011T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP33468192 1992-12-15
JP17797893A JP3225699B2 (ja) 1992-12-15 1993-07-19 半導体レーザ及びこれを用いた光学装置

Publications (2)

Publication Number Publication Date
DE69309011D1 DE69309011D1 (de) 1997-04-24
DE69309011T2 true DE69309011T2 (de) 1997-10-09

Family

ID=26498319

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69309011T Expired - Fee Related DE69309011T2 (de) 1992-12-15 1993-12-14 Halbleiterlaser mit optimiertem Resonator

Country Status (5)

Country Link
US (1) US5438583A (de)
EP (1) EP0602603B1 (de)
JP (1) JP3225699B2 (de)
KR (1) KR100246054B1 (de)
DE (1) DE69309011T2 (de)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3283802B2 (ja) * 1997-09-29 2002-05-20 日本電気株式会社 選択成長法を用いた半導体層及びその成長方法、選択成長法を用いた窒化物系半導体層及びその成長方法、窒化物系半導体発光素子とその製造方法
JP2000101200A (ja) * 1998-09-25 2000-04-07 Sony Corp 半導体レーザーおよびマルチ半導体レーザー
JP3225942B2 (ja) * 1999-01-21 2001-11-05 日本電気株式会社 半導体光素子、その製造方法及び半導体光学装置
JP3225943B2 (ja) * 1999-01-22 2001-11-05 日本電気株式会社 半導体レーザ及びその製造方法
US6403451B1 (en) * 2000-02-09 2002-06-11 Noerh Carolina State University Methods of fabricating gallium nitride semiconductor layers on substrates including non-gallium nitride posts
KR100361593B1 (ko) * 2000-11-23 2002-11-22 주식회사일진 볼록 요철을 갖는 광학집적회로 소자, 그 제조방법, 그광학집적 회로 소자를 이용하여 제조한 광통신용 송수신장치의 모듈
US7649921B2 (en) 2002-05-08 2010-01-19 The Furukawa Electric Co., Ltd. Laser module
JP2003332680A (ja) 2002-05-08 2003-11-21 Furukawa Electric Co Ltd:The レーザモジュール
JP2004289108A (ja) * 2002-09-27 2004-10-14 Mitsubishi Electric Corp 半導体光素子
JP2006190782A (ja) * 2005-01-05 2006-07-20 Fujitsu Ltd 光半導体装置及びその製造方法
KR100842277B1 (ko) * 2006-12-07 2008-06-30 한국전자통신연구원 반사형 반도체 광증폭기 및 수퍼 루미네센스 다이오드
JP5223439B2 (ja) * 2007-05-28 2013-06-26 ソニー株式会社 半導体発光素子

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5967677A (ja) * 1982-07-01 1984-04-17 Semiconductor Res Found 光集積回路

Also Published As

Publication number Publication date
DE69309011D1 (de) 1997-04-24
EP0602603A2 (de) 1994-06-22
EP0602603A3 (de) 1994-10-26
JPH06237045A (ja) 1994-08-23
KR940017020A (ko) 1994-07-25
EP0602603B1 (de) 1997-03-19
US5438583A (en) 1995-08-01
KR100246054B1 (ko) 2000-03-15
JP3225699B2 (ja) 2001-11-05

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee