DE69118482D1 - Laserdiode mit einer Schutzschicht auf ihrer lichtemittierenden Endfläche - Google Patents
Laserdiode mit einer Schutzschicht auf ihrer lichtemittierenden EndflächeInfo
- Publication number
- DE69118482D1 DE69118482D1 DE69118482T DE69118482T DE69118482D1 DE 69118482 D1 DE69118482 D1 DE 69118482D1 DE 69118482 T DE69118482 T DE 69118482T DE 69118482 T DE69118482 T DE 69118482T DE 69118482 D1 DE69118482 D1 DE 69118482D1
- Authority
- DE
- Germany
- Prior art keywords
- light
- end surface
- protective layer
- laser diode
- emitting end
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000011241 protective layer Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/12—Heads, e.g. forming of the optical beam spot or modulation of the optical beam
- G11B7/123—Integrated head arrangements, e.g. with source and detectors mounted on the same substrate
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/12—Heads, e.g. forming of the optical beam spot or modulation of the optical beam
- G11B7/125—Optical beam sources therefor, e.g. laser control circuitry specially adapted for optical storage devices; Modulators, e.g. means for controlling the size or intensity of optical spots or optical traces
- G11B7/127—Lasers; Multiple laser arrays
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/12—Heads, e.g. forming of the optical beam spot or modulation of the optical beam
- G11B7/22—Apparatus or processes for the manufacture of optical heads, e.g. assembly
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/023—Mount members, e.g. sub-mount members
- H01S5/0232—Lead-frames
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/08—Disposition or mounting of heads or light sources relatively to record carriers
- G11B7/09—Disposition or mounting of heads or light sources relatively to record carriers with provision for moving the light beam or focus plane for the purpose of maintaining alignment of the light beam relative to the record carrier during transducing operation, e.g. to compensate for surface irregularities of the latter or for track following
- G11B7/0908—Disposition or mounting of heads or light sources relatively to record carriers with provision for moving the light beam or focus plane for the purpose of maintaining alignment of the light beam relative to the record carrier during transducing operation, e.g. to compensate for surface irregularities of the latter or for track following for focusing only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/02208—Mountings; Housings characterised by the shape of the housings
- H01S5/02212—Can-type, e.g. TO-CAN housings with emission along or parallel to symmetry axis
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/02218—Material of the housings; Filling of the housings
- H01S5/02234—Resin-filled housings; the housings being made of resin
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
- H01S5/0282—Passivation layers or treatments
- H01S5/0283—Optically inactive coating on the facet, e.g. half-wave coating
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP30225890 | 1990-11-07 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69118482D1 true DE69118482D1 (de) | 1996-05-09 |
DE69118482T2 DE69118482T2 (de) | 1996-08-22 |
Family
ID=17906853
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69118482T Expired - Fee Related DE69118482T2 (de) | 1990-11-07 | 1991-11-05 | Laserdiode mit einer Schutzschicht auf ihrer lichtemittierenden Endfläche |
Country Status (3)
Country | Link |
---|---|
US (1) | US5355385A (de) |
EP (1) | EP0484887B1 (de) |
DE (1) | DE69118482T2 (de) |
Families Citing this family (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07170019A (ja) * | 1993-12-14 | 1995-07-04 | Fuji Electric Co Ltd | 半導体レーザ装置 |
US5557116A (en) * | 1992-12-24 | 1996-09-17 | Sharp Kabushiki Kaisha | Semiconductor laser device and resin layer |
US5517479A (en) * | 1993-03-26 | 1996-05-14 | Matsushita Electronics Corporation | Optical head including a semiconductor laser having a non-scatter incident area |
US6784511B1 (en) | 1994-01-20 | 2004-08-31 | Fuji Electric Co., Ltd. | Resin-sealed laser diode device |
JPH07335980A (ja) * | 1994-06-07 | 1995-12-22 | Fuji Electric Co Ltd | 半導体レーザ装置 |
JPH0832110A (ja) * | 1994-07-19 | 1996-02-02 | Oki Electric Ind Co Ltd | 端面発光型led、端面発光型発光素子の製造方法、端面発光型発光素子の発光特性測定方法 |
US5960024A (en) | 1998-03-30 | 1999-09-28 | Bandwidth Unlimited, Inc. | Vertical optical cavities produced with selective area epitaxy |
US6493372B1 (en) | 1998-04-14 | 2002-12-10 | Bandwidth 9, Inc. | Vertical cavity apparatus with tunnel junction |
US6493371B1 (en) | 1998-04-14 | 2002-12-10 | Bandwidth9, Inc. | Vertical cavity apparatus with tunnel junction |
US6535541B1 (en) | 1998-04-14 | 2003-03-18 | Bandwidth 9, Inc | Vertical cavity apparatus with tunnel junction |
US5991326A (en) | 1998-04-14 | 1999-11-23 | Bandwidth9, Inc. | Lattice-relaxed verticle optical cavities |
US6760357B1 (en) | 1998-04-14 | 2004-07-06 | Bandwidth9 | Vertical cavity apparatus with tunnel junction |
US6493373B1 (en) | 1998-04-14 | 2002-12-10 | Bandwidth 9, Inc. | Vertical cavity apparatus with tunnel junction |
US6487230B1 (en) | 1998-04-14 | 2002-11-26 | Bandwidth 9, Inc | Vertical cavity apparatus with tunnel junction |
US6487231B1 (en) | 1998-04-14 | 2002-11-26 | Bandwidth 9, Inc. | Vertical cavity apparatus with tunnel junction |
US6226425B1 (en) | 1999-02-24 | 2001-05-01 | Bandwidth9 | Flexible optical multiplexer |
US6233263B1 (en) | 1999-06-04 | 2001-05-15 | Bandwidth9 | Monitoring and control assembly for wavelength stabilized optical system |
US6275513B1 (en) | 1999-06-04 | 2001-08-14 | Bandwidth 9 | Hermetically sealed semiconductor laser device |
JP4902044B2 (ja) * | 1999-09-24 | 2012-03-21 | シャープ株式会社 | 半導体レーザ装置、光伝送装置、光伝送システム、電子機器、制御装置、接続コネクタ、通信装置、ならびに光伝送方法、データ送受信方法 |
JP3735033B2 (ja) * | 2000-12-07 | 2006-01-11 | シャープ株式会社 | 半導体レーザ装置 |
JP3987716B2 (ja) * | 2001-12-10 | 2007-10-10 | シャープ株式会社 | 半導体レーザ装置およびその製造方法 |
CN206773352U (zh) * | 2017-06-16 | 2017-12-19 | 京东方科技集团股份有限公司 | 一种光源组件、背光模组及显示装置 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CA1115401A (en) * | 1977-10-11 | 1981-12-29 | Peter A. Barnes | Glass coating for semiconductor optical devices |
JPS61207091A (ja) * | 1985-03-11 | 1986-09-13 | Sharp Corp | 半導体レ−ザ素子 |
JPH0644663B2 (ja) * | 1987-03-31 | 1994-06-08 | 三菱電機株式会社 | 半導体レ−ザ |
NL8700904A (nl) * | 1987-04-16 | 1988-11-16 | Philips Nv | Halfgeleiderlaserinrichting en werkwijze voor het vervaardigen daarvan. |
JPH0642582B2 (ja) * | 1988-06-27 | 1994-06-01 | シャープ株式会社 | 誘電体多層被覆膜 |
NL8801667A (nl) * | 1988-07-01 | 1990-02-01 | Philips Nv | Fi - coating voor dfb/dbr laserdiodes. |
EP0366472B1 (de) * | 1988-10-28 | 1994-01-19 | Matsushita Electric Industrial Co., Ltd. | Halbleiterlaser-Vorrichtung |
US4962985A (en) * | 1989-10-02 | 1990-10-16 | At&T Bell Laboratories | Protective coatings for optical devices comprising Langmuir-Blodgett films |
-
1991
- 1991-11-05 DE DE69118482T patent/DE69118482T2/de not_active Expired - Fee Related
- 1991-11-05 EP EP91118848A patent/EP0484887B1/de not_active Expired - Lifetime
- 1991-11-06 US US07/788,601 patent/US5355385A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0484887A2 (de) | 1992-05-13 |
DE69118482T2 (de) | 1996-08-22 |
US5355385A (en) | 1994-10-11 |
EP0484887A3 (en) | 1992-05-27 |
EP0484887B1 (de) | 1996-04-03 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |