DE68917428D1 - Sonnenzelle und ihr Herstellungsverfahren. - Google Patents

Sonnenzelle und ihr Herstellungsverfahren.

Info

Publication number
DE68917428D1
DE68917428D1 DE68917428T DE68917428T DE68917428D1 DE 68917428 D1 DE68917428 D1 DE 68917428D1 DE 68917428 T DE68917428 T DE 68917428T DE 68917428 T DE68917428 T DE 68917428T DE 68917428 D1 DE68917428 D1 DE 68917428D1
Authority
DE
Germany
Prior art keywords
solar cell
manufacturing process
solar
cell
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE68917428T
Other languages
English (en)
Other versions
DE68917428T2 (de
Inventor
Sigeru Mitsubishi Denki Hokuyo
Takao Mitsubishi Denki K K Oda
Hideo Mitsubishi Den Matsumoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Application granted granted Critical
Publication of DE68917428D1 publication Critical patent/DE68917428D1/de
Publication of DE68917428T2 publication Critical patent/DE68917428T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H01L31/0693—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells the devices including, apart from doping material or other impurities, only AIIIBV compounds, e.g. GaAs or InP solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/142—Energy conversion devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
    • H01L31/1852—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising a growth substrate not being an AIIIBV compound
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/933—Germanium or silicon or Ge-Si on III-V
DE68917428T 1988-11-16 1989-11-13 Sonnenzelle und ihr Herstellungsverfahren. Expired - Fee Related DE68917428T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63290990A JPH02135786A (ja) 1988-11-16 1988-11-16 太陽電池セル

Publications (2)

Publication Number Publication Date
DE68917428D1 true DE68917428D1 (de) 1994-09-15
DE68917428T2 DE68917428T2 (de) 1994-12-22

Family

ID=17763035

Family Applications (1)

Application Number Title Priority Date Filing Date
DE68917428T Expired - Fee Related DE68917428T2 (de) 1988-11-16 1989-11-13 Sonnenzelle und ihr Herstellungsverfahren.

Country Status (3)

Country Link
US (1) US4997491A (de)
JP (1) JPH02135786A (de)
DE (1) DE68917428T2 (de)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2593957B2 (ja) * 1990-11-09 1997-03-26 シャープ株式会社 バイパスダイオード付太陽電池
US5818095A (en) * 1992-08-11 1998-10-06 Texas Instruments Incorporated High-yield spatial light modulator with light blocking layer
US5376185A (en) * 1993-05-12 1994-12-27 Midwest Research Institute Single-junction solar cells with the optimum band gap for terrestrial concentrator applications
US6278054B1 (en) * 1998-05-28 2001-08-21 Tecstar Power Systems, Inc. Solar cell having an integral monolithically grown bypass diode
JP3754841B2 (ja) * 1998-06-11 2006-03-15 キヤノン株式会社 光起電力素子およびその製造方法
GB2341273A (en) * 1998-09-04 2000-03-08 Eev Ltd Solar cell arrangements
DE19921545A1 (de) * 1999-05-11 2000-11-23 Angew Solarenergie Ase Gmbh Solarzelle sowie Verfahren zur Herstellung einer solchen
US6635507B1 (en) 1999-07-14 2003-10-21 Hughes Electronics Corporation Monolithic bypass-diode and solar-cell string assembly
US7151307B2 (en) * 2001-05-08 2006-12-19 The Boeing Company Integrated semiconductor circuits on photo-active Germanium substrates
US7592536B2 (en) * 2003-10-02 2009-09-22 The Boeing Company Solar cell structure with integrated discrete by-pass diode
US8686284B2 (en) * 2008-10-23 2014-04-01 Alta Devices, Inc. Photovoltaic device with increased light trapping
US20120104460A1 (en) 2010-11-03 2012-05-03 Alta Devices, Inc. Optoelectronic devices including heterojunction
CN102257635A (zh) * 2008-10-23 2011-11-23 奥塔装置公司 光伏器件的薄吸收层
EP2351097A2 (de) 2008-10-23 2011-08-03 Alta Devices, Inc. Pv-element
US9691921B2 (en) 2009-10-14 2017-06-27 Alta Devices, Inc. Textured metallic back reflector
US9502594B2 (en) 2012-01-19 2016-11-22 Alta Devices, Inc. Thin-film semiconductor optoelectronic device with textured front and/or back surface prepared from template layer and etching
US11271128B2 (en) 2009-10-23 2022-03-08 Utica Leaseco, Llc Multi-junction optoelectronic device
US20170141256A1 (en) 2009-10-23 2017-05-18 Alta Devices, Inc. Multi-junction optoelectronic device with group iv semiconductor as a bottom junction
US9768329B1 (en) 2009-10-23 2017-09-19 Alta Devices, Inc. Multi-junction optoelectronic device
US20150380576A1 (en) 2010-10-13 2015-12-31 Alta Devices, Inc. Optoelectronic device with dielectric layer and method of manufacture
US11121272B2 (en) 2011-02-09 2021-09-14 Utica Leaseco, Llc Self-bypass diode function for gallium arsenide photovoltaic devices
US9716196B2 (en) 2011-02-09 2017-07-25 Alta Devices, Inc. Self-bypass diode function for gallium arsenide photovoltaic devices
US11038080B2 (en) 2012-01-19 2021-06-15 Utica Leaseco, Llc Thin-film semiconductor optoelectronic device with textured front and/or back surface prepared from etching
US9461192B2 (en) * 2014-12-16 2016-10-04 Sunpower Corporation Thick damage buffer for foil-based metallization of solar cells

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1320775A (fr) * 1962-01-12 1963-03-15 Europ Des Semi Conducteurs Soc Dispositif photovoltaïque à semi-conducteurs pour piles solaires
JPS5664475A (en) * 1979-08-23 1981-06-01 Unisearch Ltd Solar battery with branching diode
JPS57184255A (en) * 1981-05-08 1982-11-12 Mitsubishi Electric Corp Solar cell
JPS57204180A (en) * 1981-06-09 1982-12-14 Mitsubishi Electric Corp Gaas solar battery element
US4481378A (en) * 1982-07-30 1984-11-06 Motorola, Inc. Protected photovoltaic module
JPS6167968A (ja) * 1984-09-11 1986-04-08 Sharp Corp ＧａＡｓ太陽電池素子
US4846896A (en) * 1987-07-08 1989-07-11 Mitsubishi Denki Kabushiki Kaisha Solar cell with integral reverse voltage protection diode
JPH01205472A (ja) * 1988-02-10 1989-08-17 Mitsubishi Electric Corp 太陽電池セル
US4933022A (en) * 1988-11-14 1990-06-12 Board Of Trustees Of The Leland Stanford Univ. & Electric Power Research Institute Solar cell having interdigitated contacts and internal bypass diodes

Also Published As

Publication number Publication date
JPH02135786A (ja) 1990-05-24
US4997491A (en) 1991-03-05
DE68917428T2 (de) 1994-12-22

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)
8339 Ceased/non-payment of the annual fee