DE69734183D1 - Sonnenzelle und Herstellungsverfahren - Google Patents

Sonnenzelle und Herstellungsverfahren

Info

Publication number
DE69734183D1
DE69734183D1 DE69734183T DE69734183T DE69734183D1 DE 69734183 D1 DE69734183 D1 DE 69734183D1 DE 69734183 T DE69734183 T DE 69734183T DE 69734183 T DE69734183 T DE 69734183T DE 69734183 D1 DE69734183 D1 DE 69734183D1
Authority
DE
Germany
Prior art keywords
solar cell
manufacturing process
solar
cell
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69734183T
Other languages
English (en)
Other versions
DE69734183T8 (de
DE69734183T2 (de
Inventor
Mikihiko Nishitani
Takayuki Negami
Naoki Kohara
Takahiro Wada
Yasuhiro Hashimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP27196096A external-priority patent/JP3646953B2/ja
Priority claimed from JP14823097A external-priority patent/JP3589380B2/ja
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Publication of DE69734183D1 publication Critical patent/DE69734183D1/de
Application granted granted Critical
Publication of DE69734183T2 publication Critical patent/DE69734183T2/de
Publication of DE69734183T8 publication Critical patent/DE69734183T8/de
Active legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
    • H01L31/0749—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type including a AIBIIICVI compound, e.g. CdS/CulnSe2 [CIS] heterojunction solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
    • H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Energy (AREA)
  • Photovoltaic Devices (AREA)
DE69734183T 1996-10-15 1997-10-14 Sonnenzelle und Herstellungsverfahren Active DE69734183T8 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP27196096A JP3646953B2 (ja) 1996-10-15 1996-10-15 太陽電池
JP27196096 1996-10-15
JP14823097A JP3589380B2 (ja) 1997-06-05 1997-06-05 半導体薄膜の製造方法および薄膜太陽電池の製造方法
JP14823097 1997-06-05

Publications (3)

Publication Number Publication Date
DE69734183D1 true DE69734183D1 (de) 2005-10-20
DE69734183T2 DE69734183T2 (de) 2006-11-23
DE69734183T8 DE69734183T8 (de) 2007-03-29

Family

ID=26478511

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69734183T Active DE69734183T8 (de) 1996-10-15 1997-10-14 Sonnenzelle und Herstellungsverfahren

Country Status (4)

Country Link
US (1) US6023020A (de)
EP (1) EP0837511B1 (de)
CN (1) CN1156026C (de)
DE (1) DE69734183T8 (de)

Families Citing this family (44)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6259016B1 (en) * 1999-03-05 2001-07-10 Matsushita Electric Industrial Co., Ltd. Solar cell
DE19956735B4 (de) * 1999-11-25 2008-08-21 Shell Erneuerbare Energien Gmbh Dünnfilmsolarzelle mit einer Chalkopyritverbindung und einer Titan und Sauerstoff enthaltenden Verbindung
GB2370282B (en) * 2000-12-16 2003-03-26 Univ Northumbria Newcastle Rapid anodic process for producing chalcopyrite compounds
US7019208B2 (en) * 2001-11-20 2006-03-28 Energy Photovoltaics Method of junction formation for CIGS photovoltaic devices
JP2003179242A (ja) * 2001-12-12 2003-06-27 National Institute Of Advanced Industrial & Technology 金属酸化物半導体薄膜及びその製法
US20050126620A1 (en) * 2002-03-06 2005-06-16 Sharp Kabushiki Kaisha Photoelectric converting device and its production method
JP4055053B2 (ja) * 2002-03-26 2008-03-05 本田技研工業株式会社 化合物薄膜太陽電池およびその製造方法
WO2003105238A1 (en) * 2002-06-11 2003-12-18 The State Of Oregon Acting By And Through The State Board Of Higher Education On Behalf Of Oregon State University Polycrystalline thin-film solar cells
US7163835B2 (en) * 2003-09-26 2007-01-16 E. I. Du Pont De Nemours And Company Method for producing thin semiconductor films by deposition from solution
WO2005069386A1 (ja) * 2004-01-13 2005-07-28 Matsushita Electric Industrial Co., Ltd. 太陽電池とその製造方法
SE0400582D0 (sv) * 2004-03-05 2004-03-05 Forskarpatent I Uppsala Ab Method for in-line process control of the CIGS process
SE527733C2 (sv) * 2004-10-08 2006-05-23 Midsummer Ab Anordning och metod för att tillverka solceller
JP2006120745A (ja) * 2004-10-20 2006-05-11 Mitsubishi Heavy Ind Ltd 薄膜シリコン積層型太陽電池
EP1684362A3 (de) * 2004-12-02 2006-08-02 Technische Universiteit Delft Verfahren zur Herstellung dünner Schichten, vorzugsweise für Solarzellen
JP4948778B2 (ja) * 2005-03-30 2012-06-06 Ｔｄｋ株式会社 太陽電池およびその色調整方法
AT503837B1 (de) * 2006-06-22 2009-01-15 Isovolta Verfahren zum herstellen von photoaktiven schichten sowie bauelemente umfassend diese schicht(en)
US20090169723A1 (en) * 2007-10-02 2009-07-02 University Of Delaware I-iii-vi2 photovoltaic absorber layers
CN101615638B (zh) * 2008-10-06 2012-12-05 四川大学 具有Te缓冲层的CdTe薄膜太阳电池
CN101723669A (zh) * 2008-10-31 2010-06-09 中国科学院上海硅酸盐研究所 一类可用于热电材料化合物及制备方法
WO2010085553A1 (en) * 2009-01-21 2010-07-29 Purdue Research Foundation Selenization of precursor layer containing culns2 nanoparticles
TWI416716B (zh) * 2009-01-21 2013-11-21 Sony Corp 固態影像裝置，其製造方法，及攝像設備
US8665363B2 (en) * 2009-01-21 2014-03-04 Sony Corporation Solid-state image device, method for producing the same, and image pickup apparatus
US7922804B2 (en) * 2009-03-25 2011-04-12 Jenn Feng Industrial Co., Ltd. Method for preparing sol-gel solution for CIGS solar cell
UA110325C2 (en) 2009-07-03 2015-12-25 Australian Biomedical Company Pty Ltd Medicinal carbohydrates for treating respiratory conditions
CN101986437B (zh) * 2009-07-29 2012-08-22 北京北方微电子基地设备工艺研究中心有限责任公司 一种晶体硅太阳能电池
CN102362339B (zh) 2009-07-30 2014-03-26 京瓷株式会社 化合物半导体的制造方法、光电转换装置的制造方法以及半导体形成用溶液
CN101997055B (zh) * 2009-08-10 2012-05-30 北京有色金属研究总院 薄膜太阳能电池吸收层用多元材料的制备方法
US20110232758A1 (en) * 2010-03-25 2011-09-29 Rohm And Haas Electronic Materials Llc Thin film photovoltaic cell
WO2011133361A1 (en) * 2010-04-21 2011-10-27 EncoreSolar, Inc. Method of fabricating solar cells with electrodeposited compound interface layers
WO2011146115A1 (en) 2010-05-21 2011-11-24 Heliovolt Corporation Liquid precursor for deposition of copper selenide and method of preparing the same
TWI405347B (zh) * 2010-07-02 2013-08-11 Gcsol Tech Co Ltd Ｃｉｇｓ太陽能電池
WO2012023973A2 (en) 2010-08-16 2012-02-23 Heliovolt Corporation Liquid precursor for deposition of indium selenide and method of preparing the same
WO2012165500A1 (ja) 2011-05-31 2012-12-06 京セラ株式会社 光電変換素子およびその製造方法
JP2013058562A (ja) 2011-09-07 2013-03-28 Semiconductor Energy Lab Co Ltd 光電変換装置
US9105797B2 (en) 2012-05-31 2015-08-11 Alliance For Sustainable Energy, Llc Liquid precursor inks for deposition of In—Se, Ga—Se and In—Ga—Se
US9153729B2 (en) 2012-11-26 2015-10-06 International Business Machines Corporation Atomic layer deposition for photovoltaic devices
US8889466B2 (en) * 2013-04-12 2014-11-18 International Business Machines Corporation Protective insulating layer and chemical mechanical polishing for polycrystalline thin film solar cells
FR3006109B1 (fr) * 2013-05-24 2016-09-16 Commissariat Energie Atomique Procede de realisation de la jonction p-n d'une cellule photovoltaique en couches minces et procede d'obtention correspondant d'une cellule photovoltaique.
CN103606573B (zh) * 2013-11-27 2016-09-07 中国科学院上海硅酸盐研究所 一种黄铜矿结构的中间带吸收材料及其制备方法
TWI596785B (zh) * 2015-10-07 2017-08-21 財團法人工業技術研究院 太陽能電池結構與其形成方法
US9705013B2 (en) * 2015-11-10 2017-07-11 International Business Machines Corporation Crack-tolerant photovoltaic cell structure and fabrication method
CN106252017B (zh) * 2016-07-25 2018-05-04 山东大学 一种室温铁磁半导体材料MnSiP2及其制备方法和应用
CN109713059A (zh) * 2018-12-27 2019-05-03 中国科学院电工研究所 一种cigs电池器件及其制备方法
CN111063751B (zh) * 2019-08-13 2022-02-08 合肥工业大学 一种超薄无机窄带异质结光电探测器及其制备方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4612411A (en) * 1985-06-04 1986-09-16 Atlantic Richfield Company Thin film solar cell with ZnO window layer
US5078804A (en) * 1989-06-27 1992-01-07 The Boeing Company I-III-VI2 based solar cell utilizing the structure CuInGaSe2 CdZnS/ZnO
EP0476138B1 (de) * 1990-03-09 1997-11-19 Matsushita Electric Industrial Co., Ltd. Vorrichtung zur anzeige des schlafens

Also Published As

Publication number Publication date
DE69734183T8 (de) 2007-03-29
CN1156026C (zh) 2004-06-30
EP0837511B1 (de) 2005-09-14
CN1185662A (zh) 1998-06-24
EP0837511A3 (de) 1999-07-14
DE69734183T2 (de) 2006-11-23
US6023020A (en) 2000-02-08
EP0837511A2 (de) 1998-04-22

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Legal Events

Date Code Title Description
8332 No legal effect for de
8370 Indication of lapse of patent is to be deleted
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: PANASONIC CORP., KADOMA, OSAKA, JP