DE69534582D1 - Photovoltaisches Bauelement, Elektrodenstruktur desselben und Herstellungsverfahren - Google Patents
Photovoltaisches Bauelement, Elektrodenstruktur desselben und HerstellungsverfahrenInfo
- Publication number
- DE69534582D1 DE69534582D1 DE69534582T DE69534582T DE69534582D1 DE 69534582 D1 DE69534582 D1 DE 69534582D1 DE 69534582 T DE69534582 T DE 69534582T DE 69534582 T DE69534582 T DE 69534582T DE 69534582 D1 DE69534582 D1 DE 69534582D1
- Authority
- DE
- Germany
- Prior art keywords
- manufacturing
- electrode structure
- photovoltaic device
- photovoltaic
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
- H01L31/03921—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Photovoltaic Devices (AREA)
Applications Claiming Priority (10)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6105249A JPH07321351A (ja) | 1994-05-19 | 1994-05-19 | 光起電力素子の電極構造及びその製造方法 |
JP10524994 | 1994-05-19 | ||
JP6108113A JPH07321353A (ja) | 1994-05-23 | 1994-05-23 | 光起電力素子およびその製造方法 |
JP10811394 | 1994-05-23 | ||
JP6125376A JP2750085B2 (ja) | 1994-06-07 | 1994-06-07 | 光起電力素子の集電電極作製方法 |
JP12537694 | 1994-06-07 | ||
JP6178908A JPH0846226A (ja) | 1994-07-29 | 1994-07-29 | 光起電力素子の電極及び光起電力素子 |
JP17890994 | 1994-07-29 | ||
JP6178909A JPH0846230A (ja) | 1994-07-29 | 1994-07-29 | 光起電力素子の電極及び光起電力素子 |
JP17890894 | 1994-07-29 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69534582D1 true DE69534582D1 (de) | 2005-12-15 |
DE69534582T2 DE69534582T2 (de) | 2006-07-20 |
Family
ID=27526211
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69534582T Expired - Lifetime DE69534582T2 (de) | 1994-05-19 | 1995-05-18 | Photovoltaisches Bauelement, Elektrodenstruktur desselben und Herstellungsverfahren |
Country Status (6)
Country | Link |
---|---|
US (1) | US5942048A (de) |
EP (1) | EP0684652B1 (de) |
KR (1) | KR100195685B1 (de) |
CN (2) | CN1088262C (de) |
AU (1) | AU695669B2 (de) |
DE (1) | DE69534582T2 (de) |
Families Citing this family (122)
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DE69722976T2 (de) * | 1996-01-10 | 2004-05-13 | Canon K.K. | Solarzellenmodul mit einer spezifischen Abdeckung der zeitlichen Oberflächen, die einen ausgezeichneten Widerstand gegen Feuchtigkeit sowie eine ausgezeichnete Durchsichtigkeit aufweist |
ZA974261B (en) * | 1996-05-17 | 1997-11-17 | Canon Kk | Photovoltaic device and process for the production thereof. |
JP3031301B2 (ja) * | 1997-06-25 | 2000-04-10 | 日本電気株式会社 | 銅配線構造およびその製造方法 |
JPH11186572A (ja) * | 1997-12-22 | 1999-07-09 | Canon Inc | 光起電力素子モジュール |
JPH11289103A (ja) * | 1998-02-05 | 1999-10-19 | Canon Inc | 半導体装置および太陽電池モジュ―ル及びその解体方法 |
US6010220A (en) * | 1998-03-23 | 2000-01-04 | Ppg Industries Ohio, Inc. | Tab and bus bar application method |
JP2001156321A (ja) * | 1999-03-09 | 2001-06-08 | Fuji Xerox Co Ltd | 半導体装置およびその製造方法 |
US20090111206A1 (en) | 1999-03-30 | 2009-04-30 | Daniel Luch | Collector grid, electrode structures and interrconnect structures for photovoltaic arrays and methods of manufacture |
US7507903B2 (en) | 1999-03-30 | 2009-03-24 | Daniel Luch | Substrate and collector grid structures for integrated series connected photovoltaic arrays and process of manufacture of such arrays |
US8138413B2 (en) | 2006-04-13 | 2012-03-20 | Daniel Luch | Collector grid and interconnect structures for photovoltaic arrays and modules |
US8076568B2 (en) | 2006-04-13 | 2011-12-13 | Daniel Luch | Collector grid and interconnect structures for photovoltaic arrays and modules |
US8664030B2 (en) | 1999-03-30 | 2014-03-04 | Daniel Luch | Collector grid and interconnect structures for photovoltaic arrays and modules |
US8222513B2 (en) | 2006-04-13 | 2012-07-17 | Daniel Luch | Collector grid, electrode structures and interconnect structures for photovoltaic arrays and methods of manufacture |
JP4441102B2 (ja) | 1999-11-22 | 2010-03-31 | キヤノン株式会社 | 光起電力素子及びその製造方法 |
US8198696B2 (en) | 2000-02-04 | 2012-06-12 | Daniel Luch | Substrate structures for integrated series connected photovoltaic arrays and process of manufacture of such arrays |
US7898054B2 (en) | 2000-02-04 | 2011-03-01 | Daniel Luch | Substrate structures for integrated series connected photovoltaic arrays and process of manufacture of such arrays |
US7898053B2 (en) | 2000-02-04 | 2011-03-01 | Daniel Luch | Substrate structures for integrated series connected photovoltaic arrays and process of manufacture of such arrays |
JP2001345469A (ja) * | 2000-06-01 | 2001-12-14 | Canon Inc | 光起電力素子および光起電力素子の製造方法 |
US6586270B2 (en) | 2000-06-01 | 2003-07-01 | Canon Kabushiki Kaisha | Process for producing a photovoltaic element |
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JP2003031829A (ja) * | 2001-05-09 | 2003-01-31 | Canon Inc | 光起電力素子 |
JP2003037277A (ja) | 2001-05-15 | 2003-02-07 | Canon Inc | 光起電力素子及び光起電力素子の製造方法 |
KR100593407B1 (ko) * | 2002-04-17 | 2006-06-28 | 마쯔시다덴기산교 가부시키가이샤 | 반도체 장치 및 반도체 장치의 조립 방법 |
DE10239845C1 (de) * | 2002-08-29 | 2003-12-24 | Day4 Energy Inc | Elektrode für fotovoltaische Zellen, fotovoltaische Zelle und fotovoltaischer Modul |
JP2005538556A (ja) * | 2002-09-05 | 2005-12-15 | コナルカ テクノロジーズ インコーポレイテッド | 有機光起電素子およびその製造方法 |
US20040112424A1 (en) * | 2002-10-03 | 2004-06-17 | Daido Steel Co., Ltd. | Solar cell assembly, and photovoltaic solar electric generator of concentrator type |
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JP2004228333A (ja) * | 2003-01-23 | 2004-08-12 | Canon Inc | 光起電力セル、及びその製造方法 |
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JP2005142268A (ja) * | 2003-11-05 | 2005-06-02 | Canon Inc | 光起電力素子およびその製造方法 |
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-
1995
- 1995-05-18 DE DE69534582T patent/DE69534582T2/de not_active Expired - Lifetime
- 1995-05-18 EP EP95107622A patent/EP0684652B1/de not_active Expired - Lifetime
- 1995-05-18 AU AU20134/95A patent/AU695669B2/en not_active Ceased
- 1995-05-19 KR KR1019950012542A patent/KR100195685B1/ko not_active IP Right Cessation
- 1995-05-19 CN CN95107160A patent/CN1088262C/zh not_active Expired - Fee Related
-
1997
- 1997-07-18 US US08/897,105 patent/US5942048A/en not_active Expired - Lifetime
-
2001
- 2001-06-27 CN CNB011226382A patent/CN1193433C/zh not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
EP0684652A3 (de) | 1998-05-13 |
US5942048A (en) | 1999-08-24 |
KR950034858A (ko) | 1995-12-28 |
EP0684652B1 (de) | 2005-11-09 |
AU2013495A (en) | 1995-11-30 |
EP0684652A2 (de) | 1995-11-29 |
DE69534582T2 (de) | 2006-07-20 |
KR100195685B1 (ko) | 1999-06-15 |
CN1088262C (zh) | 2002-07-24 |
CN1150338A (zh) | 1997-05-21 |
AU695669B2 (en) | 1998-08-20 |
CN1389930A (zh) | 2003-01-08 |
CN1193433C (zh) | 2005-03-16 |
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